Nonlinear electrical properties of Si three-terminal junction devices

Fantao Meng; Jie Sun; Mariusz Graczyk; Kailiang Zhang; Mika Prunnila; Jouni Ahopelto; Peixiong Shi; Jinkui Chu; Ivan Maximov; H.Q. Xu

doi:10.1063/1.3526725

Nonlinear electrical properties of Si three-terminal junction devices

Fantao Meng, Jie Sun, Mariusz Graczyk, Kailiang Zhang, Mika Prunnila, Jouni Ahopelto, Peixiong Shi, Jinkui Chu, Ivan Maximov, H.Q. Xu^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Scientific › peer-review

17 Citations (Scopus)

Abstract

This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

Original language	English
Article number	242106
Number of pages	3
Journal	Applied Physics Letters
Volume	97
Issue number	24
DOIs	https://doi.org/10.1063/1.3526725
Publication status	Published - 2010
MoE publication type	A1 Journal article-refereed

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10.1063/1.3526725

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title = "Nonlinear electrical properties of Si three-terminal junction devices",

abstract = "This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.",

author = "Fantao Meng and Jie Sun and Mariusz Graczyk and Kailiang Zhang and Mika Prunnila and Jouni Ahopelto and Peixiong Shi and Jinkui Chu and Ivan Maximov and H.Q. Xu",

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AU - Meng, Fantao

AU - Sun, Jie

AU - Graczyk, Mariusz

AU - Zhang, Kailiang

AU - Prunnila, Mika

AU - Ahopelto, Jouni

AU - Shi, Peixiong

AU - Chu, Jinkui

AU - Maximov, Ivan

AU - Xu, H.Q.

PY - 2010

Y1 - 2010

N2 - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

AB - This letter reports on the realization and characterization of silicon three-terminal junction devices made in a silicon-on-insulator wafer. Room temperature electrical measurements show that the fabricated devices exhibit pronounced nonlinear electrical properties inherent to ballistic electron transport in a three-terminal ballistic junction (TBJ) device. The results show that room temperature functional TBJ devices can be realized in a semiconductor material other than high-mobility III-V semiconductor heterostructures and provide a simple design principle for compact silicon devices in nanoelectronics.

U2 - 10.1063/1.3526725

DO - 10.1063/1.3526725

M3 - Article

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 242106

ER -

Nonlinear electrical properties of Si three-terminal junction devices

Abstract

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