Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors

Nikolay Beev (Corresponding Author), Mikko Kiviranta

Research output: Contribution to journalOther journal contributionScientific

5 Citations (Scopus)

Abstract

Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.
Original languageEnglish
JournalReview of Scientific Instruments
Volume83
Issue number6
DOIs
Publication statusPublished - 2012
MoE publication typeB1 Article in a scientific magazine

Fingerprint

differential amplifiers
Differential amplifiers
Broadband amplifiers
Heterojunction bipolar transistors
bipolar transistors
Cryogenics
low noise
cryogenics
heterojunctions
noise temperature
broadband
amplifiers
transistor amplifiers
operational amplifiers
liquid nitrogen
Temperature
temperature
germanium
Operational amplifiers
bandwidth

Keywords

  • cryogenic electronics
  • differential amplifiers
  • Ge-Si alloys
  • heterojunction bipolar transistors
  • low noise amplifiers
  • wideband amplifiers

Cite this

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title = "Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors",
abstract = "Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.",
keywords = "cryogenic electronics, differential amplifiers, Ge-Si alloys, heterojunction bipolar transistors, low noise amplifiers, wideband amplifiers",
author = "Nikolay Beev and Mikko Kiviranta",
note = "Project code: 70793",
year = "2012",
doi = "10.1063/1.4729665",
language = "English",
volume = "83",
journal = "Review of Scientific Instruments",
issn = "0034-6748",
publisher = "American Institute of Physics AIP",
number = "6",

}

Note : Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors. / Beev, Nikolay (Corresponding Author); Kiviranta, Mikko.

In: Review of Scientific Instruments, Vol. 83, No. 6, 2012.

Research output: Contribution to journalOther journal contributionScientific

TY - JOUR

T1 - Note

T2 - Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors

AU - Beev, Nikolay

AU - Kiviranta, Mikko

N1 - Project code: 70793

PY - 2012

Y1 - 2012

N2 - Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

AB - Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

KW - cryogenic electronics

KW - differential amplifiers

KW - Ge-Si alloys

KW - heterojunction bipolar transistors

KW - low noise amplifiers

KW - wideband amplifiers

U2 - 10.1063/1.4729665

DO - 10.1063/1.4729665

M3 - Other journal contribution

VL - 83

JO - Review of Scientific Instruments

JF - Review of Scientific Instruments

SN - 0034-6748

IS - 6

ER -