Abstract
Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.
| Original language | English |
|---|---|
| Journal | Review of Scientific Instruments |
| Volume | 83 |
| Issue number | 6 |
| DOIs | |
| Publication status | Published - 2012 |
| MoE publication type | B1 Article in a scientific magazine |
Keywords
- cryogenic electronics
- differential amplifiers
- Ge-Si alloys
- heterojunction bipolar transistors
- low noise amplifiers
- wideband amplifiers