Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors

Nikolay Beev (Corresponding Author), Mikko Kiviranta

    Research output: Contribution to journalOther journal contributionScientific

    6 Citations (Scopus)

    Abstract

    Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.
    Original languageEnglish
    JournalReview of Scientific Instruments
    Volume83
    Issue number6
    DOIs
    Publication statusPublished - 2012
    MoE publication typeB1 Article in a scientific magazine

    Keywords

    • cryogenic electronics
    • differential amplifiers
    • Ge-Si alloys
    • heterojunction bipolar transistors
    • low noise amplifiers
    • wideband amplifiers

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