Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors

Nikolay Beev (Corresponding Author), Mikko Kiviranta

    Research output: Contribution to journalOther journal contributionScientific

    5 Citations (Scopus)

    Abstract

    Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.
    Original languageEnglish
    JournalReview of Scientific Instruments
    Volume83
    Issue number6
    DOIs
    Publication statusPublished - 2012
    MoE publication typeB1 Article in a scientific magazine

    Fingerprint

    differential amplifiers
    Differential amplifiers
    Broadband amplifiers
    Heterojunction bipolar transistors
    bipolar transistors
    Cryogenics
    low noise
    cryogenics
    heterojunctions
    noise temperature
    broadband
    amplifiers
    transistor amplifiers
    operational amplifiers
    liquid nitrogen
    Temperature
    temperature
    germanium
    Operational amplifiers
    bandwidth

    Keywords

    • cryogenic electronics
    • differential amplifiers
    • Ge-Si alloys
    • heterojunction bipolar transistors
    • low noise amplifiers
    • wideband amplifiers

    Cite this

    @article{9ef8b6ff115343d7aa2692f2f366489f,
    title = "Note: Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors",
    abstract = "Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.",
    keywords = "cryogenic electronics, differential amplifiers, Ge-Si alloys, heterojunction bipolar transistors, low noise amplifiers, wideband amplifiers",
    author = "Nikolay Beev and Mikko Kiviranta",
    note = "Project code: 70793",
    year = "2012",
    doi = "10.1063/1.4729665",
    language = "English",
    volume = "83",
    journal = "Review of Scientific Instruments",
    issn = "0034-6748",
    publisher = "American Institute of Physics AIP",
    number = "6",

    }

    Note : Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors. / Beev, Nikolay (Corresponding Author); Kiviranta, Mikko.

    In: Review of Scientific Instruments, Vol. 83, No. 6, 2012.

    Research output: Contribution to journalOther journal contributionScientific

    TY - JOUR

    T1 - Note

    T2 - Cryogenic low-noise dc-coupled wideband differential amplifier based on SiGe heterojunction bipolar transistors

    AU - Beev, Nikolay

    AU - Kiviranta, Mikko

    N1 - Project code: 70793

    PY - 2012

    Y1 - 2012

    N2 - Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

    AB - Silicon-germanium heterojunction bipolar transistors can be used to construct low-noise cryogenic amplifiers. We present a dc-coupled differential amplifier capable of operating down to 10 K. In this temperature regime it has bandwidth of 15 MHz and noise temperature as low as 1.3 K. When operated at liquid nitrogen temperature of 77 K, the measured noise temperature is lower than 3 K. The amplifier is based on the commercially available transistors NESG3031 and operational amplifier OPA836 and is capable of standalone operation without any additional stages at room temperature.

    KW - cryogenic electronics

    KW - differential amplifiers

    KW - Ge-Si alloys

    KW - heterojunction bipolar transistors

    KW - low noise amplifiers

    KW - wideband amplifiers

    U2 - 10.1063/1.4729665

    DO - 10.1063/1.4729665

    M3 - Other journal contribution

    VL - 83

    JO - Review of Scientific Instruments

    JF - Review of Scientific Instruments

    SN - 0034-6748

    IS - 6

    ER -