Novel sub-100 nm thin film transistors

Sami Franssila, Jari Paloheimo, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

14 Citations (Scopus)

Abstract

A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.
Original languageEnglish
Pages (from-to)713 - 714
Number of pages2
JournalElectronics Letters
Volume29
Issue number8
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

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Thin film transistors
Transistors
Polymers
Field effect transistors
Electrodes
Metals

Cite this

Franssila, S., Paloheimo, J., & Kuivalainen, P. (1993). Novel sub-100 nm thin film transistors. Electronics Letters, 29(8), 713 - 714. https://doi.org/10.1049/el:19930477
Franssila, Sami ; Paloheimo, Jari ; Kuivalainen, Pekka. / Novel sub-100 nm thin film transistors. In: Electronics Letters. 1993 ; Vol. 29, No. 8. pp. 713 - 714.
@article{25525035770d413c8a889d962474b827,
title = "Novel sub-100 nm thin film transistors",
abstract = "A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.",
author = "Sami Franssila and Jari Paloheimo and Pekka Kuivalainen",
note = "Project code: PUO1008",
year = "1993",
doi = "10.1049/el:19930477",
language = "English",
volume = "29",
pages = "713 -- 714",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology IET",
number = "8",

}

Franssila, S, Paloheimo, J & Kuivalainen, P 1993, 'Novel sub-100 nm thin film transistors', Electronics Letters, vol. 29, no. 8, pp. 713 - 714. https://doi.org/10.1049/el:19930477

Novel sub-100 nm thin film transistors. / Franssila, Sami; Paloheimo, Jari; Kuivalainen, Pekka.

In: Electronics Letters, Vol. 29, No. 8, 1993, p. 713 - 714.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Novel sub-100 nm thin film transistors

AU - Franssila, Sami

AU - Paloheimo, Jari

AU - Kuivalainen, Pekka

N1 - Project code: PUO1008

PY - 1993

Y1 - 1993

N2 - A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

AB - A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

U2 - 10.1049/el:19930477

DO - 10.1049/el:19930477

M3 - Article

VL - 29

SP - 713

EP - 714

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 8

ER -

Franssila S, Paloheimo J, Kuivalainen P. Novel sub-100 nm thin film transistors. Electronics Letters. 1993;29(8):713 - 714. https://doi.org/10.1049/el:19930477