Novel sub-100 nm thin film transistors

Sami Franssila, Jari Paloheimo, Pekka Kuivalainen

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)


A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.
Original languageEnglish
Pages (from-to)713-714
JournalElectronics Letters
Issue number8
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed


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