Novel sub-100 nm thin film transistors

Sami Franssila; Jari Paloheimo; Pekka Kuivalainen

doi:10.1049/el:19930477

Novel sub-100 nm thin film transistors

Sami Franssila
, Jari Paloheimo
, Pekka Kuivalainen

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

15 Citations (Scopus)

Abstract

A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

Original language	English
Pages (from-to)	713-714
Journal	Electronics Letters
Volume	29
Issue number	8
DOIs	https://doi.org/10.1049/el:19930477
Publication status	Published - 1993
MoE publication type	A1 Journal article-refereed

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10.1049/el:19930477

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title = "Novel sub-100 nm thin film transistors",

abstract = "A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.",

author = "Sami Franssila and Jari Paloheimo and Pekka Kuivalainen",

note = "Project code: PUO1008",

year = "1993",

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journal = "Electronics Letters",

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AU - Franssila, Sami

AU - Paloheimo, Jari

AU - Kuivalainen, Pekka

N1 - Project code: PUO1008

PY - 1993

Y1 - 1993

N2 - A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

AB - A new method is introduced for fabricating metal electrodes for thin film field-effect transistors having a source to drain distance in the sub-100 nm range. The method is based on a liftoff process with sidewall spacers and it is demonstrated by fabricating sub-100 nm polymer transistors. These are to the authors' knowledge the smallest polymer transistors reported.

U2 - 10.1049/el:19930477

DO - 10.1049/el:19930477

M3 - Article

SN - 0013-5194

VL - 29

SP - 713

EP - 714

JO - Electronics Letters

JF - Electronics Letters

IS - 8

ER -

Novel sub-100 nm thin film transistors

Abstract

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