Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

M.L. Green, A.J. Allen, X. Li, J. Wang, J. Ilavsky, A. Delabie, Riikka Puurunen, B. Brijs

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.
Original languageEnglish
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number3
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

x ray scattering
grazing incidence
synchrotron radiation
nucleation
microstructure
scattering
surface roughness
porosity
cycles
nuclei

Keywords

  • hafnium
  • hafnium compounds
  • thin films
  • porous materials
  • nucleation
  • atomic layer deposition
  • crystal microstructure
  • x-ray scattering
  • porosity
  • surface roughness
  • oxidation

Cite this

Green, M.L. ; Allen, A.J. ; Li, X. ; Wang, J. ; Ilavsky, J. ; Delabie, A. ; Puurunen, Riikka ; Brijs, B. / Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation. In: Applied Physics Letters. 2006 ; Vol. 88, No. 3. pp. 1-3.
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abstract = "We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50{\%} porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.",
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author = "M.L. Green and A.J. Allen and X. Li and J. Wang and J. Ilavsky and A. Delabie and Riikka Puurunen and B. Brijs",
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Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation. / Green, M.L.; Allen, A.J.; Li, X.; Wang, J.; Ilavsky, J.; Delabie, A.; Puurunen, Riikka; Brijs, B.

In: Applied Physics Letters, Vol. 88, No. 3, 2006, p. 1-3.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Nucleation of atomic-layer-deposited HfO2 films, and evolution of their microstructure, studied by grazing incidence small angle x-ray scattering using synchrotron radiation

AU - Green, M.L.

AU - Allen, A.J.

AU - Li, X.

AU - Wang, J.

AU - Ilavsky, J.

AU - Delabie, A.

AU - Puurunen, Riikka

AU - Brijs, B.

PY - 2006

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N2 - We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.

AB - We report the results of grazing incidence small angle x-ray scattering experiments on the nucleation and growth of atomic layer deposited HfO2 films. The scattering features are internal (porosity) and external (roughness) surfaces. Films grown on H-terminated Si exhibit greater scattering than films grown on chemically oxidized Si. The films grown on H-terminated Si may be as much as 50% porous. Characteristic scattering feature sizes are those of the film nuclei, about 2 nm, which then coalesce and become inherited features of the films. Films grown on chemically oxidized Si are observed to coalesce at about 25 growth cycles.

KW - hafnium

KW - hafnium compounds

KW - thin films

KW - porous materials

KW - nucleation

KW - atomic layer deposition

KW - crystal microstructure

KW - x-ray scattering

KW - porosity

KW - surface roughness

KW - oxidation

U2 - 10.1063/1.2164417

DO - 10.1063/1.2164417

M3 - Article

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

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ER -