Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

K. Saarinen; J. Nissilä; J. Oila; V. Ranki; M. Hakala; M. Puska; P. Hautojärvi; Jari Likonen; T. Suski; I. Grzegory; B. Lucznik; S. Porowski

doi:10.1016/S0921-4526(99)00400-7

Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

K. Saarinen (Corresponding Author), J. Nissilä, J. Oila, V. Ranki, M. Hakala, M. Puska, P. Hautojärvi, Jari Likonen, T. Suski, I. Grzegory, B. Lucznik, S. Porowski

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Abstract

Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg⁻_Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of O_N⁺ donors by Mg_Ga⁻ acceptors.

Original language	English
Pages (from-to)	33-38
Number of pages	6
Journal	Physica B: Condensed Matter
Volume	273-274
DOIs	https://doi.org/10.1016/S0921-4526(99)00400-7
Publication status	Published - 1999
MoE publication type	A1 Journal article-refereed

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title = "Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals",

abstract = "Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.",

author = "K. Saarinen and J. Nissil{\"a} and J. Oila and V. Ranki and M. Hakala and M. Puska and P. Hautoj{\"a}rvi and Jari Likonen and T. Suski and I. Grzegory and B. Lucznik and S. Porowski",

note = "Project code: KET4134",

year = "1999",

doi = "10.1016/S0921-4526(99)00400-7",

language = "English",

volume = "273-274",

pages = "33--38",

journal = "Physica B: Condensed Matter",

issn = "0921-4526",

publisher = "Elsevier",

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TY - JOUR

T1 - Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

AU - Saarinen, K.

AU - Nissilä, J.

AU - Oila, J.

AU - Ranki, V.

AU - Hakala, M.

AU - Puska, M.

AU - Hautojärvi, P.

AU - Likonen, Jari

AU - Suski, T.

AU - Grzegory, I.

AU - Lucznik, B.

AU - Porowski, S.

N1 - Project code: KET4134

PY - 1999

Y1 - 1999

N2 - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.

AB - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.

U2 - 10.1016/S0921-4526(99)00400-7

DO - 10.1016/S0921-4526(99)00400-7

M3 - Article

SN - 0921-4526

VL - 273-274

SP - 33

EP - 38

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

ER -

Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

Abstract

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