Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

K. Saarinen (Corresponding Author), J. Nissilä, J. Oila, V. Ranki, M. Hakala, M. Puska, P. Hautojärvi, Jari Likonen, T. Suski, I. Grzegory, B. Lucznik, S. Porowski

Research output: Contribution to journalArticleScientificpeer-review

15 Citations (Scopus)

Abstract

Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to MgGa. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa acceptors.
Original languageEnglish
Pages (from-to)33-38
Number of pages6
JournalPhysica B: Condensed Matter
Volume273-274
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

negative ions
Vacancies
Negative ions
Crystals
Doping (additives)
crystals
ions
Gallium
Positrons
energy of formation
Secondary ion mass spectrometry
Fermi level
secondary ion mass spectrometry
gallium
positrons
Spectroscopy
Impurities
life (durability)
impurities
spectroscopy

Cite this

Saarinen, K., Nissilä, J., Oila, J., Ranki, V., Hakala, M., Puska, M., ... Porowski, S. (1999). Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals. Physica B: Condensed Matter, 273-274, 33-38. https://doi.org/10.1016/S0921-4526(99)00400-7
Saarinen, K. ; Nissilä, J. ; Oila, J. ; Ranki, V. ; Hakala, M. ; Puska, M. ; Hautojärvi, P. ; Likonen, Jari ; Suski, T. ; Grzegory, I. ; Lucznik, B. ; Porowski, S. / Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals. In: Physica B: Condensed Matter. 1999 ; Vol. 273-274. pp. 33-38.
@article{2da79154975943f48170957256c2187d,
title = "Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals",
abstract = "Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.",
author = "K. Saarinen and J. Nissil{\"a} and J. Oila and V. Ranki and M. Hakala and M. Puska and P. Hautoj{\"a}rvi and Jari Likonen and T. Suski and I. Grzegory and B. Lucznik and S. Porowski",
note = "Project code: KET4134",
year = "1999",
doi = "10.1016/S0921-4526(99)00400-7",
language = "English",
volume = "273-274",
pages = "33--38",
journal = "Physica B: Condensed Matter",
issn = "0921-4526",
publisher = "Elsevier",

}

Saarinen, K, Nissilä, J, Oila, J, Ranki, V, Hakala, M, Puska, M, Hautojärvi, P, Likonen, J, Suski, T, Grzegory, I, Lucznik, B & Porowski, S 1999, 'Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals', Physica B: Condensed Matter, vol. 273-274, pp. 33-38. https://doi.org/10.1016/S0921-4526(99)00400-7

Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals. / Saarinen, K. (Corresponding Author); Nissilä, J.; Oila, J.; Ranki, V.; Hakala, M.; Puska, M.; Hautojärvi, P.; Likonen, Jari; Suski, T.; Grzegory, I.; Lucznik, B.; Porowski, S.

In: Physica B: Condensed Matter, Vol. 273-274, 1999, p. 33-38.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

AU - Saarinen, K.

AU - Nissilä, J.

AU - Oila, J.

AU - Ranki, V.

AU - Hakala, M.

AU - Puska, M.

AU - Hautojärvi, P.

AU - Likonen, Jari

AU - Suski, T.

AU - Grzegory, I.

AU - Lucznik, B.

AU - Porowski, S.

N1 - Project code: KET4134

PY - 1999

Y1 - 1999

N2 - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.

AB - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.

U2 - 10.1016/S0921-4526(99)00400-7

DO - 10.1016/S0921-4526(99)00400-7

M3 - Article

VL - 273-274

SP - 33

EP - 38

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

ER -