Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

K. Saarinen (Corresponding Author), J. Nissilä, J. Oila, V. Ranki, M. Hakala, M. Puska, P. Hautojärvi, Jari Likonen, T. Suski, I. Grzegory, B. Lucznik, S. Porowski

    Research output: Contribution to journalArticleScientificpeer-review

    15 Citations (Scopus)

    Abstract

    Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to MgGa. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa acceptors.
    Original languageEnglish
    Pages (from-to)33-38
    Number of pages6
    JournalPhysica B: Condensed Matter
    Volume273-274
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    negative ions
    Vacancies
    Negative ions
    Crystals
    Doping (additives)
    crystals
    ions
    Gallium
    Positrons
    energy of formation
    Secondary ion mass spectrometry
    Fermi level
    secondary ion mass spectrometry
    gallium
    positrons
    Spectroscopy
    Impurities
    life (durability)
    impurities
    spectroscopy

    Cite this

    Saarinen, K., Nissilä, J., Oila, J., Ranki, V., Hakala, M., Puska, M., ... Porowski, S. (1999). Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals. Physica B: Condensed Matter, 273-274, 33-38. https://doi.org/10.1016/S0921-4526(99)00400-7
    Saarinen, K. ; Nissilä, J. ; Oila, J. ; Ranki, V. ; Hakala, M. ; Puska, M. ; Hautojärvi, P. ; Likonen, Jari ; Suski, T. ; Grzegory, I. ; Lucznik, B. ; Porowski, S. / Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals. In: Physica B: Condensed Matter. 1999 ; Vol. 273-274. pp. 33-38.
    @article{2da79154975943f48170957256c2187d,
    title = "Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals",
    abstract = "Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.",
    author = "K. Saarinen and J. Nissil{\"a} and J. Oila and V. Ranki and M. Hakala and M. Puska and P. Hautoj{\"a}rvi and Jari Likonen and T. Suski and I. Grzegory and B. Lucznik and S. Porowski",
    note = "Project code: KET4134",
    year = "1999",
    doi = "10.1016/S0921-4526(99)00400-7",
    language = "English",
    volume = "273-274",
    pages = "33--38",
    journal = "Physica B: Condensed Matter",
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    Saarinen, K, Nissilä, J, Oila, J, Ranki, V, Hakala, M, Puska, M, Hautojärvi, P, Likonen, J, Suski, T, Grzegory, I, Lucznik, B & Porowski, S 1999, 'Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals', Physica B: Condensed Matter, vol. 273-274, pp. 33-38. https://doi.org/10.1016/S0921-4526(99)00400-7

    Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals. / Saarinen, K. (Corresponding Author); Nissilä, J.; Oila, J.; Ranki, V.; Hakala, M.; Puska, M.; Hautojärvi, P.; Likonen, Jari; Suski, T.; Grzegory, I.; Lucznik, B.; Porowski, S.

    In: Physica B: Condensed Matter, Vol. 273-274, 1999, p. 33-38.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Observation of Ga vacancies and negative ions in undoped and Mg doped GaN bulk crystals

    AU - Saarinen, K.

    AU - Nissilä, J.

    AU - Oila, J.

    AU - Ranki, V.

    AU - Hakala, M.

    AU - Puska, M.

    AU - Hautojärvi, P.

    AU - Likonen, Jari

    AU - Suski, T.

    AU - Grzegory, I.

    AU - Lucznik, B.

    AU - Porowski, S.

    N1 - Project code: KET4134

    PY - 1999

    Y1 - 1999

    N2 - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.

    AB - Gallium vacancies and negative ions are observed in GaN bulk crystals by applying positron lifetime spectroscopy. The concentration of Ga vacancies decreases with increasing Mg doping, as expected from the behavior of the VGa formation energy as a function of the Fermi level. The concentration of negative ions correlates with that of Mg impurities determined by secondary ion mass spectrometry. We thus attribute the negative ions to Mg−Ga. The negative charge of Mg suggests that Mg doping converts n-type GaN to semi-insulating mainly due to the electrical compensation of ON+ donors by MgGa− acceptors.

    U2 - 10.1016/S0921-4526(99)00400-7

    DO - 10.1016/S0921-4526(99)00400-7

    M3 - Article

    VL - 273-274

    SP - 33

    EP - 38

    JO - Physica B: Condensed Matter

    JF - Physica B: Condensed Matter

    SN - 0921-4526

    ER -