Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface

Andrea Scorzoni; Manuela Finetti; Giovanni Soncini; Ilkka Suni

Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface

Andrea Scorzoni, Manuela Finetti, Giovanni Soncini, Ilkka Suni

VTT Technical Research Centre of Finland

National Research Council (CNR)

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.

Original language	English
Pages (from-to)	341-345
Journal	Alta Frequenza
Volume	56
Issue number	8
Publication status	Published - 1987
MoE publication type	A1 Journal article-refereed

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@article{3b1e19f7936e4c1caa77648ad4ad5ce7,

title = "Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface",

abstract = "The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.",

author = "Andrea Scorzoni and Manuela Finetti and Giovanni Soncini and Ilkka Suni",

year = "1987",

language = "English",

volume = "56",

pages = "341--345",

journal = "Alta Frequenza",

issn = "0002-6557",

publisher = "Associazione Elettrotecnica ed Elettronica Italiana",

number = "8",

}

TY - JOUR

T1 - Ohmic contact resistance evaluation in silicon planar structures

T2 - application to the CoSi //2/n** plus Si interface

AU - Scorzoni, Andrea

AU - Finetti, Manuela

AU - Soncini, Giovanni

AU - Suni, Ilkka

PY - 1987

Y1 - 1987

N2 - The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.

AB - The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.

M3 - Article

SN - 0002-6557

VL - 56

SP - 341

EP - 345

JO - Alta Frequenza

JF - Alta Frequenza

IS - 8

ER -

Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface

Abstract

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