Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface

Andrea Scorzoni, Manuela Finetti, Giovanni Soncini, Ilkka Suni

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.
Original languageEnglish
Pages (from-to)341-345
JournalAlta Frequenza
Volume56
Issue number8
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed

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Ohmic contacts
Contact resistance
Semiconductor materials
Silicon
Metals

Cite this

Scorzoni, Andrea ; Finetti, Manuela ; Soncini, Giovanni ; Suni, Ilkka. / Ohmic contact resistance evaluation in silicon planar structures : application to the CoSi //2/n** plus Si interface. In: Alta Frequenza. 1987 ; Vol. 56, No. 8. pp. 341-345.
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abstract = "The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.",
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Scorzoni, A, Finetti, M, Soncini, G & Suni, I 1987, 'Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface', Alta Frequenza, vol. 56, no. 8, pp. 341-345.

Ohmic contact resistance evaluation in silicon planar structures : application to the CoSi //2/n** plus Si interface. / Scorzoni, Andrea; Finetti, Manuela; Soncini, Giovanni; Suni, Ilkka.

In: Alta Frequenza, Vol. 56, No. 8, 1987, p. 341-345.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Ohmic contact resistance evaluation in silicon planar structures

T2 - application to the CoSi //2/n** plus Si interface

AU - Scorzoni, Andrea

AU - Finetti, Manuela

AU - Soncini, Giovanni

AU - Suni, Ilkka

PY - 1987

Y1 - 1987

N2 - The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.

AB - The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.

M3 - Article

VL - 56

SP - 341

EP - 345

JO - Alta Frequenza

JF - Alta Frequenza

SN - 0002-6557

IS - 8

ER -