Ohmic contact resistance evaluation in silicon planar structures: application to the CoSi //2/n** plus Si interface

Andrea Scorzoni, Manuela Finetti, Giovanni Soncini, Ilkka Suni

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The use of a self-aligned test pattern is suggested to analyze the electrical performance of metal/semiconductor ohmic interfaces, and the procedure is applied to the CoSi//2/n** plus Si contact. Then the parameters extracted from the previously characterized interface are used to predict the electrical behavior and to optimize planar structures of practical interest.
Original languageEnglish
Pages (from-to)341-345
JournalAlta Frequenza
Issue number8
Publication statusPublished - 1987
MoE publication typeA1 Journal article-refereed


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