Oligoethyleneoxide functionalised sexithiophene organic field effect transistors

Henrik Sandberg; Oliver Henze; Andreas F Kilbinger; Henning Sirringhaus; W. James Feast; Richard H. Friend

doi:10.1016/S0379-6779(02)01125-6

Oligoethyleneoxide functionalised sexithiophene organic field effect transistors

Henrik Sandberg (Corresponding Author), Oliver Henze, Andreas F Kilbinger, Henning Sirringhaus, W. James Feast, Richard H. Friend

Not published at VTT

Research output: Contribution to journal › Other journal contribution › Scientific › peer-review

24 Citations (Scopus)

Abstract

Thin films of oligoethyleneoxide functionalised sexithiophene have been prepared utilising the self organising properties of the material. The polarity difference of the constituents induces preferential order in thin films of the material which enhances transistor operation. Devices are fabricated with the material as the organic semiconductor and the thin film transistor (TFT) characteristics can be related to the structure and organisation of the thin film.

Original language	English
Pages (from-to)	885-886
Number of pages	2
Journal	Synthetic Metals
Volume	137
Issue number	1-3
DOIs	https://doi.org/10.1016/S0379-6779(02)01125-6
Publication status	Published - 1 Apr 2003
MoE publication type	A1 Journal article-refereed

Keywords

amorphous thin films
semiconducting films
organic semiconductors
thin film
transistor

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10.1016/S0379-6779(02)01125-6

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title = "Oligoethyleneoxide functionalised sexithiophene organic field effect transistors",

abstract = "Thin films of oligoethyleneoxide functionalised sexithiophene have been prepared utilising the self organising properties of the material. The polarity difference of the constituents induces preferential order in thin films of the material which enhances transistor operation. Devices are fabricated with the material as the organic semiconductor and the thin film transistor (TFT) characteristics can be related to the structure and organisation of the thin film.",

keywords = "amorphous thin films, semiconducting films, organic semiconductors, thin film, transistor",

author = "Henrik Sandberg and Oliver Henze and Kilbinger, {Andreas F} and Henning Sirringhaus and Feast, {W. James} and Friend, {Richard H.}",

note = "Conference Abstract",

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doi = "10.1016/S0379-6779(02)01125-6",

language = "English",

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Oligoethyleneoxide functionalised sexithiophene organic field effect transistors. / Sandberg, Henrik (Corresponding Author); Henze, Oliver; Kilbinger, Andreas F; Sirringhaus, Henning; Feast, W. James; Friend, Richard H.

In: Synthetic Metals, Vol. 137, No. 1-3, 01.04.2003, p. 885-886.

Research output: Contribution to journal › Other journal contribution › Scientific › peer-review

TY - JOUR

T1 - Oligoethyleneoxide functionalised sexithiophene organic field effect transistors

AU - Sandberg, Henrik

AU - Henze, Oliver

AU - Kilbinger, Andreas F

AU - Sirringhaus, Henning

AU - Feast, W. James

AU - Friend, Richard H.

N1 - Conference Abstract

PY - 2003/4/1

Y1 - 2003/4/1

N2 - Thin films of oligoethyleneoxide functionalised sexithiophene have been prepared utilising the self organising properties of the material. The polarity difference of the constituents induces preferential order in thin films of the material which enhances transistor operation. Devices are fabricated with the material as the organic semiconductor and the thin film transistor (TFT) characteristics can be related to the structure and organisation of the thin film.

AB - Thin films of oligoethyleneoxide functionalised sexithiophene have been prepared utilising the self organising properties of the material. The polarity difference of the constituents induces preferential order in thin films of the material which enhances transistor operation. Devices are fabricated with the material as the organic semiconductor and the thin film transistor (TFT) characteristics can be related to the structure and organisation of the thin film.

KW - amorphous thin films

KW - semiconducting films

KW - organic semiconductors

KW - thin film

KW - transistor

U2 - 10.1016/S0379-6779(02)01125-6

DO - 10.1016/S0379-6779(02)01125-6

M3 - Other journal contribution

VL - 137

SP - 885

EP - 886

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 1-3

ER -