Abstract
We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers.
The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.
The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.
Original language | English |
---|---|
Pages (from-to) | 227-230 |
Journal | Microwave and Optical Technology Letters |
Volume | 35 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2002 |
MoE publication type | A1 Journal article-refereed |
Keywords
- semiconductor optical amplifiers
- quantum wells
- delta strain