On the design of polarization-insensitive semiconductor optical amplifiers

Marek Wartak, Philip Weetman

Research output: Contribution to journalArticleScientificpeer-review

Abstract

We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers.
The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.
Original languageEnglish
Pages (from-to)227-230
JournalMicrowave and Optical Technology Letters
Volume35
Issue number3
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

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Semiconductor optical amplifiers
light amplifiers
Electrostatics
Polarization
electrostatics
Hamiltonians
polarization
Charge carriers
Semiconductor quantum wells
charge carriers
quantum wells
Direction compound

Keywords

  • semiconductor optical amplifiers
  • quantum wells
  • delta strain

Cite this

Wartak, Marek ; Weetman, Philip. / On the design of polarization-insensitive semiconductor optical amplifiers. In: Microwave and Optical Technology Letters. 2002 ; Vol. 35, No. 3. pp. 227-230.
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On the design of polarization-insensitive semiconductor optical amplifiers. / Wartak, Marek; Weetman, Philip.

In: Microwave and Optical Technology Letters, Vol. 35, No. 3, 2002, p. 227-230.

Research output: Contribution to journalArticleScientificpeer-review

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T1 - On the design of polarization-insensitive semiconductor optical amplifiers

AU - Wartak, Marek

AU - Weetman, Philip

PY - 2002

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N2 - We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.

AB - We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.

KW - semiconductor optical amplifiers

KW - quantum wells

KW - delta strain

U2 - 10.1002/mop.10564

DO - 10.1002/mop.10564

M3 - Article

VL - 35

SP - 227

EP - 230

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

SN - 0895-2477

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