On the design of polarization-insensitive semiconductor optical amplifiers

Marek Wartak; Philip Weetman

doi:10.1002/mop.10564

On the design of polarization-insensitive semiconductor optical amplifiers

Marek Wartak
, Philip Weetman

VTT Technical Research Centre of Finland

Wilfrid Laurier University
VTT (former employee or external)

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers.
The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.

Original language	English
Pages (from-to)	227-230
Journal	Microwave and Optical Technology Letters
Volume	35
Issue number	3
DOIs	https://doi.org/10.1002/mop.10564
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

Keywords

semiconductor optical amplifiers
quantum wells
delta strain

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10.1002/mop.10564

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title = "On the design of polarization-insensitive semiconductor optical amplifiers",

abstract = "We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.",

keywords = "semiconductor optical amplifiers, quantum wells, delta strain",

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AU - Weetman, Philip

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N2 - We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.

AB - We have used the 4 × 4 Luttinger–Kohn Hamiltonian to analyse the presence of delta‐strain in quantum well on the polarization properties of semiconductor optical amplifiers. The analysis is performed for a 1.55 μm InGaAsP/InP lattice matched system grown in the [001] direction with and without the electrostatic effects of the carrier charges. The importance of electrostatic effects is indicated.

KW - semiconductor optical amplifiers

KW - quantum wells

KW - delta strain

U2 - 10.1002/mop.10564

DO - 10.1002/mop.10564

M3 - Article

SN - 0895-2477

VL - 35

SP - 227

EP - 230

JO - Microwave and Optical Technology Letters

JF - Microwave and Optical Technology Letters

IS - 3

ER -

On the design of polarization-insensitive semiconductor optical amplifiers

Abstract

Keywords

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