On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, V.M. Pudalov, P.E. Lindelof, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.
    Original languageEnglish
    Pages (from-to)691-694
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume13
    Issue number2-4
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Keywords

    • insulator transition
    • Quantum interference
    • silicon-on-insulator
    • silicon inversion layers

    Fingerprint Dive into the research topics of 'On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers'. Together they form a unique fingerprint.

  • Cite this