On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, V.M. Pudalov, P.E. Lindelof, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

Abstract

It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.
Original languageEnglish
Pages (from-to)691-694
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Volume13
Issue number2-4
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
insulators
inversions
Hole traps
electrical resistivity
silicon
Magnetoresistance
Screening
phase coherence
Metals
Impurities
metal oxide semiconductors
screening
traps
conduction
impurities
electronics
Temperature
Oxide semiconductors

Keywords

  • insulator transition
  • Quantum interference
  • silicon-on-insulator
  • silicon inversion layers

Cite this

Brunthaler, G. ; Prinz, A. ; Pillwein, G. ; Bauer, G. ; Pudalov, V.M. ; Lindelof, P.E. ; Ahopelto, Jouni. / On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. In: Physica E: Low-Dimensional Systems and Nanostructures. 2002 ; Vol. 13, No. 2-4. pp. 691-694.
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On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. / Brunthaler, G.; Prinz, A.; Pillwein, G.; Bauer, G.; Pudalov, V.M.; Lindelof, P.E.; Ahopelto, Jouni.

In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 691-694.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

AU - Brunthaler, G.

AU - Prinz, A.

AU - Pillwein, G.

AU - Bauer, G.

AU - Pudalov, V.M.

AU - Lindelof, P.E.

AU - Ahopelto, Jouni

PY - 2002

Y1 - 2002

N2 - It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.

AB - It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.

KW - insulator transition

KW - Quantum interference

KW - silicon-on-insulator

KW - silicon inversion layers

U2 - 10.1016/S1386-9477(02)00260-6

DO - 10.1016/S1386-9477(02)00260-6

M3 - Article

VL - 13

SP - 691

EP - 694

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 2-4

ER -