On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

G. Brunthaler, A. Prinz, G. Pillwein, G. Bauer, V.M. Pudalov, P.E. Lindelof, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    Abstract

    It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.
    Original languageEnglish
    Pages (from-to)691-694
    JournalPhysica E: Low-Dimensional Systems and Nanostructures
    Volume13
    Issue number2-4
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Silicon
    insulators
    inversions
    Hole traps
    electrical resistivity
    silicon
    Magnetoresistance
    Screening
    phase coherence
    Metals
    Impurities
    metal oxide semiconductors
    screening
    traps
    conduction
    impurities
    electronics
    Temperature
    Oxide semiconductors

    Keywords

    • insulator transition
    • Quantum interference
    • silicon-on-insulator
    • silicon inversion layers

    Cite this

    Brunthaler, G. ; Prinz, A. ; Pillwein, G. ; Bauer, G. ; Pudalov, V.M. ; Lindelof, P.E. ; Ahopelto, Jouni. / On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. In: Physica E: Low-Dimensional Systems and Nanostructures. 2002 ; Vol. 13, No. 2-4. pp. 691-694.
    @article{fdb70b28f60748f5ba55bd4d4ae8b4d3,
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    abstract = "It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.",
    keywords = "insulator transition, Quantum interference, silicon-on-insulator, silicon inversion layers",
    author = "G. Brunthaler and A. Prinz and G. Pillwein and G. Bauer and V.M. Pudalov and P.E. Lindelof and Jouni Ahopelto",
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    On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. / Brunthaler, G.; Prinz, A.; Pillwein, G.; Bauer, G.; Pudalov, V.M.; Lindelof, P.E.; Ahopelto, Jouni.

    In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 691-694.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers

    AU - Brunthaler, G.

    AU - Prinz, A.

    AU - Pillwein, G.

    AU - Bauer, G.

    AU - Pudalov, V.M.

    AU - Lindelof, P.E.

    AU - Ahopelto, Jouni

    PY - 2002

    Y1 - 2002

    N2 - It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.

    AB - It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.

    KW - insulator transition

    KW - Quantum interference

    KW - silicon-on-insulator

    KW - silicon inversion layers

    U2 - 10.1016/S1386-9477(02)00260-6

    DO - 10.1016/S1386-9477(02)00260-6

    M3 - Article

    VL - 13

    SP - 691

    EP - 694

    JO - Physica E: Low-Dimensional Systems and Nanostructures

    JF - Physica E: Low-Dimensional Systems and Nanostructures

    SN - 1386-9477

    IS - 2-4

    ER -