Abstract
| Original language | English |
|---|---|
| Pages (from-to) | 691-694 |
| Journal | Physica E: Low-Dimensional Systems and Nanostructures |
| Volume | 13 |
| Issue number | 2-4 |
| DOIs | |
| Publication status | Published - 2002 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- insulator transition
- Quantum interference
- silicon-on-insulator
- silicon inversion layers
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On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers. / Brunthaler, G.; Prinz, A.; Pillwein, G.; Bauer, G.; Pudalov, V.M.; Lindelof, P.E.; Ahopelto, Jouni.
In: Physica E: Low-Dimensional Systems and Nanostructures, Vol. 13, No. 2-4, 2002, p. 691-694.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - On the metallic state in high-mobility silicon inversion and silicon-on-insulator layers
AU - Brunthaler, G.
AU - Prinz, A.
AU - Pillwein, G.
AU - Bauer, G.
AU - Pudalov, V.M.
AU - Lindelof, P.E.
AU - Ahopelto, Jouni
PY - 2002
Y1 - 2002
N2 - It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.
AB - It is shown that the electronic conduction in silicon-on-insulator layers exhibits a metallic regime which is very similar to that in high-mobility Si-metal oxide semiconductor structures. The strong drop in resistivity and the critical concentration for the metal–insulator transition are consistent. From the investigation of the magnetoresistance of the weak localization, it is seen that the strong resistivity drop occurs at high densities in the absence of phase coherence. This suggests the charged hole trap model and impurity screening to be the origin of the strong resistivity drop towards lower temperatures.
KW - insulator transition
KW - Quantum interference
KW - silicon-on-insulator
KW - silicon inversion layers
U2 - 10.1016/S1386-9477(02)00260-6
DO - 10.1016/S1386-9477(02)00260-6
M3 - Article
VL - 13
SP - 691
EP - 694
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-4
ER -