On the origin of decay of spin current with temperature in organic spintronic devices

S. Majumdar (Corresponding Author), Himadri Majumdar

Research output: Contribution to journalArticleScientificpeer-review

17 Citations (Scopus)

Abstract

This article addresses the most challenging question facing the organic spintronics community today – what causes the universal loss of Giant Magnetoresistance (GMR) signal in organic spin valve devices made with different spin-polarized electrodes and organic semiconductor spacers? Careful analysis of our own and other experimental results available in literature indicate that transition of transport from polaron tunneling limit (suggested by the variable range hopping model) to thermally activated hopping limit (in the temperature range of 40–58 K) marks the most significant decrease of spin relaxation in organic semiconductors. With increasing occupancy of the available hopping sites by the thermally activated carriers, chances of spin flip inside the organic semiconductors increases significantly causing fast spin relaxation in the spin-valves.
Original languageEnglish
Pages (from-to)2653-2658
Number of pages5
JournalOrganic Electronics
Volume13
Issue number11
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Keywords

  • Giant magnetoresistance
  • organic semiconductors
  • organic spintronics
  • relaxation
  • spin transport
  • thin film electronic devices

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