In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.
|Publication status||Published - 2012|
|MoE publication type||Not Eligible|
|Event||ESA Microwave technologies and techniques workshop - Noordwijk, Netherlands|
Duration: 10 May 2012 → 12 May 2012
|Workshop||ESA Microwave technologies and techniques workshop|
|Period||10/05/12 → 12/05/12|
Dahlberg, K., Silvonen, K., & Kiuru, T. (2012). On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk. Paper presented at ESA Microwave technologies and techniques workshop, Noordwijk, Netherlands.