Abstract
In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.
| Original language | English |
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| Publication status | Published - 2012 |
| MoE publication type | Not Eligible |
| Event | ESA Microwave technologies and techniques workshop - Noordwijk, Netherlands Duration: 10 May 2012 → 12 May 2012 |
Workshop
| Workshop | ESA Microwave technologies and techniques workshop |
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| Country/Territory | Netherlands |
| City | Noordwijk |
| Period | 10/05/12 → 12/05/12 |