On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk

Krista Dahlberg, Kimmo Silvonen, Tero Kiuru

    Research output: Contribution to conferenceConference articleScientificpeer-review

    Abstract

    In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.
    Original languageEnglish
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    EventESA Microwave technologies and techniques workshop - Noordwijk, Netherlands
    Duration: 10 May 201212 May 2012

    Workshop

    WorkshopESA Microwave technologies and techniques workshop
    CountryNetherlands
    CityNoordwijk
    Period10/05/1212/05/12

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