On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk

Krista Dahlberg, Kimmo Silvonen, Tero Kiuru

    Research output: Contribution to conferenceConference articleScientificpeer-review

    Abstract

    In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.
    Original languageEnglish
    Publication statusPublished - 2012
    MoE publication typeNot Eligible
    EventESA Microwave technologies and techniques workshop - Noordwijk, Netherlands
    Duration: 10 May 201212 May 2012

    Workshop

    WorkshopESA Microwave technologies and techniques workshop
    CountryNetherlands
    CityNoordwijk
    Period10/05/1212/05/12

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    calibration
    reciprocity
    leakage
    method

    Cite this

    Dahlberg, K., Silvonen, K., & Kiuru, T. (2012). On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk. Paper presented at ESA Microwave technologies and techniques workshop, Noordwijk, Netherlands.
    Dahlberg, Krista ; Silvonen, Kimmo ; Kiuru, Tero. / On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk. Paper presented at ESA Microwave technologies and techniques workshop, Noordwijk, Netherlands.
    @conference{21c1decf89cc46a88f1a87be598ac46c,
    title = "On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk",
    abstract = "In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.",
    author = "Krista Dahlberg and Kimmo Silvonen and Tero Kiuru",
    year = "2012",
    language = "English",
    note = "ESA Microwave technologies and techniques workshop ; Conference date: 10-05-2012 Through 12-05-2012",

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    Dahlberg, K, Silvonen, K & Kiuru, T 2012, 'On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk', Paper presented at ESA Microwave technologies and techniques workshop, Noordwijk, Netherlands, 10/05/12 - 12/05/12.

    On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk. / Dahlberg, Krista; Silvonen, Kimmo; Kiuru, Tero.

    2012. Paper presented at ESA Microwave technologies and techniques workshop, Noordwijk, Netherlands.

    Research output: Contribution to conferenceConference articleScientificpeer-review

    TY - CONF

    T1 - On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk

    AU - Dahlberg, Krista

    AU - Silvonen, Kimmo

    AU - Kiuru, Tero

    PY - 2012

    Y1 - 2012

    N2 - In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.

    AB - In high frequency on-wafer S-parameter measurements a calibration method that models the cross-talk between measurement ports is preferable. This is not possible, when conventional 8- or 12-term error model calibration methods, like LRL, LRM, SOLT, etc., are used, but with 16-term error model calibration the leakage paths are taken into account. In this paper two 16-term error model calibration methods are used: a 16-term error model calibration method using five two-port standards and a 16-term error model calibration method based on reciprocity conditions using four two-port standards. The comparison of these two 16-term calibration methods by practical on-wafer measurements is presented.

    M3 - Conference article

    ER -

    Dahlberg K, Silvonen K, Kiuru T. On-Wafer Characterisation of Text-Fixtures in the Presence of Cross-Talk. 2012. Paper presented at ESA Microwave technologies and techniques workshop, Noordwijk, Netherlands.