On-wafer noise parameter measurements at 60 GHz

Manu Lahdes; Markku Sipilä; Jussi Tuovinen

On-wafer noise parameter measurements at 60 GHz

Manu Lahdes, Markku Sipilä, Jussi Tuovinen

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Original language	English
Title of host publication	International IEEE Workshop on Experimentally Based FET Device Modelling & Related Nonlinear Circuit Design
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	13.1-13.6
Publication status	Published - 1997
MoE publication type	A4 Article in a conference publication
Event	IEEE Workshop on Experimentally based FET Device Modelling & Related Nonlinear Circuit Design - Kassel, Germany Duration: 17 Jul 1997 → 18 Jul 1997

Conference

Conference	IEEE Workshop on Experimentally based FET Device Modelling & Related Nonlinear Circuit Design
Country/Territory	Germany
City	Kassel
Period	17/07/97 → 18/07/97

Cite this

@inproceedings{a4f36b89fc8d43bba28ab41914e19e7d,

title = "On-wafer noise parameter measurements at 60 GHz",

author = "Manu Lahdes and Markku Sipil{\"a} and Jussi Tuovinen",

year = "1997",

language = "English",

pages = "13.1--13.6",

booktitle = "International IEEE Workshop on Experimentally Based FET Device Modelling & Related Nonlinear Circuit Design",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "IEEE Workshop on Experimentally based FET Device Modelling & Related Nonlinear Circuit Design ; Conference date: 17-07-1997 Through 18-07-1997",

}

Lahdes, M, Sipilä, M & Tuovinen, J 1997, On-wafer noise parameter measurements at 60 GHz. in International IEEE Workshop on Experimentally Based FET Device Modelling & Related Nonlinear Circuit Design. IEEE Institute of Electrical and Electronic Engineers, pp. 13.1-13.6, IEEE Workshop on Experimentally based FET Device Modelling & Related Nonlinear Circuit Design, Kassel, Hesse, Germany, 17/07/97.

On-wafer noise parameter measurements at 60 GHz. / Lahdes, Manu; Sipilä, Markku; Tuovinen, Jussi.
International IEEE Workshop on Experimentally Based FET Device Modelling & Related Nonlinear Circuit Design. IEEE Institute of Electrical and Electronic Engineers, 1997. p. 13.1-13.6.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - On-wafer noise parameter measurements at 60 GHz

AU - Lahdes, Manu

AU - Sipilä, Markku

AU - Tuovinen, Jussi

PY - 1997

Y1 - 1997

UR - https://apps.dtic.mil/docs/citations/ADA331468

M3 - Conference article in proceedings

SP - 13.1-13.6

BT - International IEEE Workshop on Experimentally Based FET Device Modelling & Related Nonlinear Circuit Design

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - IEEE Workshop on Experimentally based FET Device Modelling & Related Nonlinear Circuit Design

Y2 - 17 July 1997 through 18 July 1997

ER -

On-wafer noise parameter measurements at 60 GHz

Conference

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Cite this