On-wafer noise parameter measurements at W-band

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23 Citations (Scopus)

Abstract

A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.
Original languageEnglish
Pages (from-to)1621-1628
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume51
Issue number6
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Keywords

  • noise parameter
  • noise measurement
  • HEMT
  • on-wafer characterization

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