On-wafer noise parameter measurements at W-band

    Research output: Contribution to journalArticleScientificpeer-review

    24 Citations (Scopus)

    Abstract

    A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.
    Original languageEnglish
    Pages (from-to)1621-1628
    Number of pages8
    JournalIEEE Transactions on Microwave Theory and Techniques
    Volume51
    Issue number6
    DOIs
    Publication statusPublished - 2003
    MoE publication typeA1 Journal article-refereed

    Keywords

    • noise parameter
    • noise measurement
    • HEMT
    • on-wafer characterization

    Fingerprint

    Dive into the research topics of 'On-wafer noise parameter measurements at W-band'. Together they form a unique fingerprint.

    Cite this