On-wafer noise parameter measurements at W-band

Tauno Vähä-Heikkilä; Manu Lahdes; Mikko Kantanen; Jussi Tuovinen

doi:10.1109/TMTT.2003.812554

On-wafer noise parameter measurements at W-band

Tauno Vähä-Heikkilä, Manu Lahdes, Mikko Kantanen, Jussi Tuovinen

Research output: Contribution to journal › Article › Scientific › peer-review

26 Citations (Scopus)

Abstract

A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

Original language	English
Pages (from-to)	1621-1628
Number of pages	8
Journal	IEEE Transactions on Microwave Theory and Techniques
Volume	51
Issue number	6
DOIs	https://doi.org/10.1109/TMTT.2003.812554
Publication status	Published - 2003
MoE publication type	A1 Journal article-refereed

Keywords

noise parameter
noise measurement
HEMT
on-wafer characterization

Access to Document

10.1109/TMTT.2003.812554

Cite this

@article{116e6f6a7c2e4bcbbe94c420aa133c7e,

title = "On-wafer noise parameter measurements at W-band",

abstract = "A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.",

keywords = "noise parameter, noise measurement, HEMT, on-wafer characterization",

author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Manu Lahdes and Mikko Kantanen and Jussi Tuovinen",

year = "2003",

doi = "10.1109/TMTT.2003.812554",

language = "English",

volume = "51",

pages = "1621--1628",

journal = "IEEE Transactions on Microwave Theory and Techniques",

issn = "0018-9480",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

number = "6",

}

TY - JOUR

T1 - On-wafer noise parameter measurements at W-band

AU - Vähä-Heikkilä, Tauno

AU - Lahdes, Manu

AU - Kantanen, Mikko

AU - Tuovinen, Jussi

PY - 2003

Y1 - 2003

N2 - A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

AB - A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

KW - noise parameter

KW - noise measurement

KW - HEMT

KW - on-wafer characterization

U2 - 10.1109/TMTT.2003.812554

DO - 10.1109/TMTT.2003.812554

M3 - Article

SN - 0018-9480

VL - 51

SP - 1621

EP - 1628

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

IS - 6

ER -

On-wafer noise parameter measurements at W-band

Abstract

Keywords

Access to Document

Fingerprint

Cite this