On-wafer noise parameter measurements at W-band

Research output: Contribution to journalArticleScientificpeer-review

23 Citations (Scopus)

Abstract

A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.
Original languageEnglish
Pages (from-to)1621-1628
Number of pages8
JournalIEEE Transactions on Microwave Theory and Techniques
Volume51
Issue number6
DOIs
Publication statusPublished - 2003
MoE publication typeA1 Journal article-refereed

Fingerprint

wafers
Scattering parameters
High electron mobility transistors
Frequency bands
high electron mobility transistors
impedance
broadband

Keywords

  • noise parameter
  • noise measurement
  • HEMT
  • on-wafer characterization

Cite this

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title = "On-wafer noise parameter measurements at W-band",
abstract = "A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.",
keywords = "noise parameter, noise measurement, HEMT, on-wafer characterization",
author = "Tauno V{\"a}h{\"a}-Heikkil{\"a} and Manu Lahdes and Mikko Kantanen and Jussi Tuovinen",
year = "2003",
doi = "10.1109/TMTT.2003.812554",
language = "English",
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On-wafer noise parameter measurements at W-band. / Vähä-Heikkilä, Tauno; Lahdes, Manu; Kantanen, Mikko; Tuovinen, Jussi.

In: IEEE Transactions on Microwave Theory and Techniques, Vol. 51, No. 6, 2003, p. 1621-1628.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - On-wafer noise parameter measurements at W-band

AU - Vähä-Heikkilä, Tauno

AU - Lahdes, Manu

AU - Kantanen, Mikko

AU - Tuovinen, Jussi

PY - 2003

Y1 - 2003

N2 - A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

AB - A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.

KW - noise parameter

KW - noise measurement

KW - HEMT

KW - on-wafer characterization

U2 - 10.1109/TMTT.2003.812554

DO - 10.1109/TMTT.2003.812554

M3 - Article

VL - 51

SP - 1621

EP - 1628

JO - IEEE Transactions on Microwave Theory and Techniques

JF - IEEE Transactions on Microwave Theory and Techniques

SN - 0018-9480

IS - 6

ER -