A wide-band on-wafer noise-parameter measurement setup has been developed for W-band. The system is based on a cold-source method and uses a simple manual impedance tuner. In addition to noise parameters, S-parameters can be measured with the same setup. Using the developed system, noise parameters of an InP high electron-mobility transistor have been measured and results are shown in the 79-94-GHz frequency band. This is the first comprehensive report of noise-parameter measurements made on active devices at W-band.
|Number of pages||8|
|Journal||IEEE Transactions on Microwave Theory and Techniques|
|Publication status||Published - 2003|
|MoE publication type||A1 Journal article-refereed|
- noise parameter
- noise measurement
- on-wafer characterization