@article{b1c13e82c6de4176b838af550f645067,
title = "Open-access 3 μm SOI waveguide platform for dense photonic integrated circuits",
abstract = "This paper gives an overview of the 3 μm silicon-on-insulator (SOI) platform that is openly available from VTT and suitable for the realization of photonic integrated circuits (PICs) for near and mid-infrared applications. Specific benefits of this thick-SOI PIC platform include low optical losses (~0.1 dB/cm), ultra-dense integration (μm-scale bends), small polarization dependency (down-to-zero birefringence) and ability to tolerate relatively high optical powers (>1 W). Fabrication technology is based on an i-line stepper and 150 mm wafer size. Open access to the waveguide platform is supported by design kits, wafer-level testing, multi-project wafer runs, dedicated R&D runs and small-to-medium volume manufacturing.",
keywords = "silicon photonics, silicon-on-insulator, gratings, strips, ribs, waveguide gratings, silicon, mirrors, integrated optics, OtaNano",
author = "Timo Aalto and Matteo Cherchi and Mikko Harjanne and Srivathsa Bhat and Paivi Heimala and Fei Sun and Markku Kapulainen and Tomi Hassinen and Tapani Vehmas",
note = "Project 118851 Funding Information: Abstract—This paper gives an overview of the 3-µm silicon-on-insulator (SOI) platform that is openly available from VTT and suitable for the realization of photonic integrated circuits (PICs) for near and mid-infrared applications. Specific benefits of this thick-SOI PIC platform include low optical losses (∼0.1 dB/cm), ultradense integration (µm-scale bends), small polarization dependency (down-to-zero birefringence), and ability to tolerate relatively high optical powers (>1 W). Fabrication technology is based on an i-line stepper and 150-mm wafer size. Open access to the waveguide platform is supported by design kits, wafer-level testing, multi-project wafer runs, dedicated R&D runs, and small-to-medium volume manufacturing. Publisher Copyright: {\textcopyright} 1995-2012 IEEE. Copyright: Copyright 2019 Elsevier B.V., All rights reserved.",
year = "2019",
month = sep,
day = "1",
doi = "10.1109/JSTQE.2019.2908551",
language = "English",
volume = "25",
journal = "IEEE Journal on Selected Topics in Quantum Electronics",
issn = "1077-260X",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
number = "5",
}