Optical and electrical properties of a-Si:H prepared by reactive sputtering

U. Gyllenberg-Gästrin, Pekka Kuivalainen, Matti Leppihalme, Heikki Isotalo

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

Original languageEnglish
Pages (from-to)372 - 377
Number of pages6
JournalPhysica Scripta
Volume29
Issue number4
DOIs
Publication statusPublished - 1984
MoE publication typeNot Eligible

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    Gyllenberg-Gästrin, U., Kuivalainen, P., Leppihalme, M., & Isotalo, H. (1984). Optical and electrical properties of a-Si:H prepared by reactive sputtering. Physica Scripta, 29(4), 372 - 377. https://doi.org/10.1088/0031-8949/29/4/015