Optical and electrical properties of a-Si:H prepared by reactive sputtering

U. Gyllenberg-Gästrin, Pekka Kuivalainen, Matti Leppihalme, Heikki Isotalo

Research output: Contribution to journalArticleScientificpeer-review

Abstract

Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

Original languageEnglish
Pages (from-to)372 - 377
Number of pages6
JournalPhysica Scripta
Volume29
Issue number4
DOIs
Publication statusPublished - 1984
MoE publication typeNot Eligible

Fingerprint

Sputtering
Electrical Properties
Optical Properties
sputtering
electrical properties
optical properties
silicon films
amorphous silicon
Magnetoresistance
Amorphous Silicon
conductivity
Hydrogen
Conductivity
Absorption
hydrogen
Dependent
temperature

Cite this

Gyllenberg-Gästrin, U., Kuivalainen, P., Leppihalme, M., & Isotalo, H. (1984). Optical and electrical properties of a-Si:H prepared by reactive sputtering. Physica Scripta, 29(4), 372 - 377. https://doi.org/10.1088/0031-8949/29/4/015
Gyllenberg-Gästrin, U. ; Kuivalainen, Pekka ; Leppihalme, Matti ; Isotalo, Heikki. / Optical and electrical properties of a-Si:H prepared by reactive sputtering. In: Physica Scripta. 1984 ; Vol. 29, No. 4. pp. 372 - 377.
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Gyllenberg-Gästrin, U, Kuivalainen, P, Leppihalme, M & Isotalo, H 1984, 'Optical and electrical properties of a-Si:H prepared by reactive sputtering', Physica Scripta, vol. 29, no. 4, pp. 372 - 377. https://doi.org/10.1088/0031-8949/29/4/015

Optical and electrical properties of a-Si:H prepared by reactive sputtering. / Gyllenberg-Gästrin, U.; Kuivalainen, Pekka; Leppihalme, Matti; Isotalo, Heikki.

In: Physica Scripta, Vol. 29, No. 4, 1984, p. 372 - 377.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Optical and electrical properties of a-Si:H prepared by reactive sputtering

AU - Gyllenberg-Gästrin, U.

AU - Kuivalainen, Pekka

AU - Leppihalme, Matti

AU - Isotalo, Heikki

PY - 1984

Y1 - 1984

N2 - Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

AB - Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

U2 - 10.1088/0031-8949/29/4/015

DO - 10.1088/0031-8949/29/4/015

M3 - Article

VL - 29

SP - 372

EP - 377

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

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Gyllenberg-Gästrin U, Kuivalainen P, Leppihalme M, Isotalo H. Optical and electrical properties of a-Si:H prepared by reactive sputtering. Physica Scripta. 1984;29(4):372 - 377. https://doi.org/10.1088/0031-8949/29/4/015