Optical and electrical properties of a-Si:H prepared by reactive sputtering

U. Gyllenberg-Gästrin; Pekka Kuivalainen; Matti Leppihalme; Heikki Isotalo

doi:10.1088/0031-8949/29/4/015

Optical and electrical properties of a-Si:H prepared by reactive sputtering

U. Gyllenberg-Gästrin, Pekka Kuivalainen, Matti Leppihalme, Heikki Isotalo

VTT Technical Research Centre of Finland

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

Original language	English
Pages (from-to)	372-377
Journal	Physica Scripta
Volume	29
Issue number	4
DOIs	https://doi.org/10.1088/0031-8949/29/4/015
Publication status	Published - 1984
MoE publication type	A1 Journal article-refereed

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title = "Optical and electrical properties of a-Si:H prepared by reactive sputtering",

abstract = "Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.",

author = "U. Gyllenberg-G{\"a}strin and Pekka Kuivalainen and Matti Leppihalme and Heikki Isotalo",

year = "1984",

doi = "10.1088/0031-8949/29/4/015",

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T1 - Optical and electrical properties of a-Si:H prepared by reactive sputtering

AU - Gyllenberg-Gästrin, U.

AU - Kuivalainen, Pekka

AU - Leppihalme, Matti

AU - Isotalo, Heikki

PY - 1984

Y1 - 1984

N2 - Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

AB - Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.

U2 - 10.1088/0031-8949/29/4/015

DO - 10.1088/0031-8949/29/4/015

M3 - Article

SN - 0031-8949

VL - 29

SP - 372

EP - 377

JO - Physica Scripta

JF - Physica Scripta

IS - 4

ER -

Optical and electrical properties of a-Si:H prepared by reactive sputtering

Abstract

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