Optical and electrical properties of a-Si:H prepared by reactive sputtering

U. Gyllenberg-Gästrin, Pekka Kuivalainen, Matti Leppihalme, Heikki Isotalo

Research output: Contribution to journalArticleScientificpeer-review


Hydrogenated amorphous silicon films have been prepared by reactive sputtering under various deposition conditions. The films have been systematically studied by means of conductivity, ESR, optical and IR-absorption and magnetoresistance measurements. The optical and electrical properties of the films were found not to be exclusively determined by hydrogen concentration, but also strongly dependent on deposition temperature.
Original languageEnglish
Pages (from-to)372-377
JournalPhysica Scripta
Issue number4
Publication statusPublished - 1984
MoE publication typeA1 Journal article-refereed


Dive into the research topics of 'Optical and electrical properties of a-Si:H prepared by reactive sputtering'. Together they form a unique fingerprint.

Cite this