Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

Tom L. R. Brien; Peter A. R. Ade; Peter S. Barry; Chris J. Dunscombe; David R. Leadley; Dmitry V. Morozov; Maksym Myronov; E. H. C. Parked; Martin J. Prest; Mika Prunnila; Rashmi V. Sudiwala; Terry E. Whall; Philip D. Mauskopf

doi:10.1109/UCMMT.2015.7460630

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

Tom L. R. Brien, Peter A. R. Ade, Peter S. Barry, Chris J. Dunscombe, David R. Leadley, Dmitry V. Morozov, Maksym Myronov, E. H. C. Parked, Martin J. Prest, Mika Prunnila, Rashmi V. Sudiwala, Terry E. Whall, Philip D. Mauskopf

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

Original language	English
Title of host publication	Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	1-4
ISBN (Electronic)	978-1-4673-7434-7, 978-1-4673-7433-0
DOIs	https://doi.org/10.1109/UCMMT.2015.7460630
Publication status	Published - 28 Apr 2016
MoE publication type	A4 Article in a conference publication
Event	UK, Europe, China Millimeter Waves and THz Technology Workshop - National Museum of Wales, Cardiff, United Kingdom Duration: 14 Sep 2015 → 15 Sep 2015 Conference number: 8

Conference

Conference	UK, Europe, China Millimeter Waves and THz Technology Workshop
Abbreviated title	UCMMT
Country/Territory	United Kingdom
City	Cardiff
Period	14/09/15 → 15/09/15

Keywords

absorption cooling
electrons
infrared detectors
millimeter waves
slot antennas
strained silicon
terahertz waves

Access to Document

10.1109/UCMMT.2015.7460630

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., Myronov, M., Parked, E. H. C., Prest, M. J., Prunnila, M., Sudiwala, R. V., Whall, T. E., & Mauskopf, P. D. (2016). Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China (pp. 1-4). [7460630] IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/UCMMT.2015.7460630

Brien, Tom L. R. ; Ade, Peter A. R. ; Barry, Peter S. ; Dunscombe, Chris J. ; Leadley, David R. ; Morozov, Dmitry V. ; Myronov, Maksym ; Parked, E. H. C. ; Prest, Martin J. ; Prunnila, Mika ; Sudiwala, Rashmi V. ; Whall, Terry E. ; Mauskopf, Philip D. / Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China. IEEE Institute of Electrical and Electronic Engineers, 2016. pp. 1-4

@inproceedings{f60d2fb441984846867374e368bdee79,

title = "Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz",

abstract = "We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.",

keywords = "absorption cooling, electrons, infrared detectors, millimeter waves, slot antennas, strained silicon, terahertz waves",

author = "Brien, {Tom L. R.} and Ade, {Peter A. R.} and Barry, {Peter S.} and Dunscombe, {Chris J.} and Leadley, {David R.} and Morozov, {Dmitry V.} and Maksym Myronov and Parked, {E. H. C.} and Prest, {Martin J.} and Mika Prunnila and Sudiwala, {Rashmi V.} and Whall, {Terry E.} and Mauskopf, {Philip D.}",

year = "2016",

month = apr,

day = "28",

doi = "10.1109/UCMMT.2015.7460630",

language = "English",

pages = "1--4",

booktitle = "Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "UK, Europe, China Millimeter Waves and THz Technology Workshop, UCMMT ; Conference date: 14-09-2015 Through 15-09-2015",

}

Brien, TLR, Ade, PAR, Barry, PS, Dunscombe, CJ, Leadley, DR, Morozov, DV, Myronov, M, Parked, EHC, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, PD 2016, Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. in Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China., 7460630, IEEE Institute of Electrical and Electronic Engineers, pp. 1-4, UK, Europe, China Millimeter Waves and THz Technology Workshop, Cardiff, United Kingdom, 14/09/15. https://doi.org/10.1109/UCMMT.2015.7460630

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. / Brien, Tom L. R.; Ade, Peter A. R.; Barry, Peter S.; Dunscombe, Chris J.; Leadley, David R.; Morozov, Dmitry V.; Myronov, Maksym; Parked, E. H. C.; Prest, Martin J.; Prunnila, Mika; Sudiwala, Rashmi V.; Whall, Terry E.; Mauskopf, Philip D.

Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China. IEEE Institute of Electrical and Electronic Engineers, 2016. p. 1-4 7460630.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

AU - Brien, Tom L. R.

AU - Ade, Peter A. R.

AU - Barry, Peter S.

AU - Dunscombe, Chris J.

AU - Leadley, David R.

AU - Morozov, Dmitry V.

AU - Myronov, Maksym

AU - Parked, E. H. C.

AU - Prest, Martin J.

AU - Prunnila, Mika

AU - Sudiwala, Rashmi V.

AU - Whall, Terry E.

AU - Mauskopf, Philip D.

N1 - Conference code: 8

PY - 2016/4/28

Y1 - 2016/4/28

N2 - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

AB - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

KW - absorption cooling

KW - electrons

KW - infrared detectors

KW - millimeter waves

KW - slot antennas

KW - strained silicon

KW - terahertz waves

U2 - 10.1109/UCMMT.2015.7460630

DO - 10.1109/UCMMT.2015.7460630

M3 - Conference article in proceedings

SP - 1

EP - 4

BT - Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - UK, Europe, China Millimeter Waves and THz Technology Workshop

Y2 - 14 September 2015 through 15 September 2015

ER -

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

Abstract

Conference

Keywords

Access to Document

Fingerprint

Cite this