Abstract
| Original language | English |
|---|---|
| Title of host publication | Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China |
| Publisher | IEEE Institute of Electrical and Electronic Engineers |
| Pages | 1 - 4 |
| ISBN (Electronic) | 978-1-4673-7434-7, 978-1-4673-7433-0 |
| DOIs | |
| Publication status | Published - 28 Apr 2016 |
| MoE publication type | A4 Article in a conference publication |
| Event | UK, Europe, China Millimeter Waves and THz Technology Workshop - National Museum of Wales, Cardiff, United Kingdom Duration: 14 Sep 2015 → 15 Sep 2015 Conference number: 8 |
Conference
| Conference | UK, Europe, China Millimeter Waves and THz Technology Workshop |
|---|---|
| Abbreviated title | UCMMT |
| Country | United Kingdom |
| City | Cardiff |
| Period | 14/09/15 → 15/09/15 |
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Keywords
- absorption cooling
- electrons
- infrared detectors
- millimeter waves
- slot antennas
- strained silicon
- terahertz waves
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Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. / Brien, Tom L. R.; Ade, Peter A. R.; Barry, Peter S.; Dunscombe, Chris J.; Leadley, David R.; Morozov, Dmitry V.; Myronov, Maksym; Parked, E. H. C.; Prest, Martin J.; Prunnila, Mika; Sudiwala, Rashmi V.; Whall, Terry E.; Mauskopf, Philip D.
Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China. IEEE Institute of Electrical and Electronic Engineers , 2016. p. 1 - 4 7460630.Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review
TY - GEN
T1 - Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz
AU - Brien, Tom L. R.
AU - Ade, Peter A. R.
AU - Barry, Peter S.
AU - Dunscombe, Chris J.
AU - Leadley, David R.
AU - Morozov, Dmitry V.
AU - Myronov, Maksym
AU - Parked, E. H. C.
AU - Prest, Martin J.
AU - Prunnila, Mika
AU - Sudiwala, Rashmi V.
AU - Whall, Terry E.
AU - Mauskopf, Philip D.
PY - 2016/4/28
Y1 - 2016/4/28
N2 - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.
AB - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.
KW - absorption cooling
KW - electrons
KW - infrared detectors
KW - millimeter waves
KW - slot antennas
KW - strained silicon
KW - terahertz waves
U2 - 10.1109/UCMMT.2015.7460630
DO - 10.1109/UCMMT.2015.7460630
M3 - Conference article in proceedings
SP - 1
EP - 4
BT - Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China
PB - IEEE Institute of Electrical and Electronic Engineers
ER -