Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

Tom L. R. Brien, Peter A. R. Ade, Peter S. Barry, Chris J. Dunscombe, David R. Leadley, Dmitry V. Morozov, Maksym Myronov, E. H. C. Parked, Martin J. Prest, Mika Prunnila, Rashmi V. Sudiwala, Terry E. Whall, Philip D. Mauskopf

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.
Original languageEnglish
Title of host publicationMillimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages1 - 4
ISBN (Electronic)978-1-4673-7434-7, 978-1-4673-7433-0
DOIs
Publication statusPublished - 28 Apr 2016
MoE publication typeA4 Article in a conference publication
EventUK, Europe, China Millimeter Waves and THz Technology Workshop - National Museum of Wales, Cardiff, United Kingdom
Duration: 14 Sep 201515 Sep 2015
Conference number: 8

Conference

ConferenceUK, Europe, China Millimeter Waves and THz Technology Workshop
Abbreviated titleUCMMT
CountryUnited Kingdom
CityCardiff
Period14/09/1515/09/15

Fingerprint

bolometers
silicon
detectors
electrons
amplifiers
slot antennas
time constant
electric contacts
absorbers
aluminum
cooling
output
sensitivity
photons
radiation
temperature

Keywords

  • absorption cooling
  • electrons
  • infrared detectors
  • millimeter waves
  • slot antennas
  • strained silicon
  • terahertz waves

Cite this

Brien, T. L. R., Ade, P. A. R., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., ... Mauskopf, P. D. (2016). Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China (pp. 1 - 4). [7460630] IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/UCMMT.2015.7460630
Brien, Tom L. R. ; Ade, Peter A. R. ; Barry, Peter S. ; Dunscombe, Chris J. ; Leadley, David R. ; Morozov, Dmitry V. ; Myronov, Maksym ; Parked, E. H. C. ; Prest, Martin J. ; Prunnila, Mika ; Sudiwala, Rashmi V. ; Whall, Terry E. ; Mauskopf, Philip D. / Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China. IEEE Institute of Electrical and Electronic Engineers , 2016. pp. 1 - 4
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title = "Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz",
abstract = "We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.",
keywords = "absorption cooling, electrons, infrared detectors, millimeter waves, slot antennas, strained silicon, terahertz waves",
author = "Brien, {Tom L. R.} and Ade, {Peter A. R.} and Barry, {Peter S.} and Dunscombe, {Chris J.} and Leadley, {David R.} and Morozov, {Dmitry V.} and Maksym Myronov and Parked, {E. H. C.} and Prest, {Martin J.} and Mika Prunnila and Sudiwala, {Rashmi V.} and Whall, {Terry E.} and Mauskopf, {Philip D.}",
year = "2016",
month = "4",
day = "28",
doi = "10.1109/UCMMT.2015.7460630",
language = "English",
pages = "1 -- 4",
booktitle = "Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China",
publisher = "IEEE Institute of Electrical and Electronic Engineers",
address = "United States",

}

Brien, TLR, Ade, PAR, Barry, PS, Dunscombe, CJ, Leadley, DR, Morozov, DV, Myronov, M, Parked, EHC, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, PD 2016, Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. in Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China., 7460630, IEEE Institute of Electrical and Electronic Engineers , pp. 1 - 4, UK, Europe, China Millimeter Waves and THz Technology Workshop, Cardiff, United Kingdom, 14/09/15. https://doi.org/10.1109/UCMMT.2015.7460630

Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. / Brien, Tom L. R.; Ade, Peter A. R.; Barry, Peter S.; Dunscombe, Chris J.; Leadley, David R.; Morozov, Dmitry V.; Myronov, Maksym; Parked, E. H. C.; Prest, Martin J.; Prunnila, Mika; Sudiwala, Rashmi V.; Whall, Terry E.; Mauskopf, Philip D.

Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China. IEEE Institute of Electrical and Electronic Engineers , 2016. p. 1 - 4 7460630.

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

TY - GEN

T1 - Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz

AU - Brien, Tom L. R.

AU - Ade, Peter A. R.

AU - Barry, Peter S.

AU - Dunscombe, Chris J.

AU - Leadley, David R.

AU - Morozov, Dmitry V.

AU - Myronov, Maksym

AU - Parked, E. H. C.

AU - Prest, Martin J.

AU - Prunnila, Mika

AU - Sudiwala, Rashmi V.

AU - Whall, Terry E.

AU - Mauskopf, Philip D.

PY - 2016/4/28

Y1 - 2016/4/28

N2 - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

AB - We present a study of a cold-electron bolometer operating at 350 mK with a twin-slot antenna coupling radiation at 160 GHz. The detector's absorbing element consists of degenerately-doped strained silicon and has Schottky contacts to superconducting aluminium leads. These contacts allow for direct electron cooling of the absorber to below the phonon temperature, enabling the cold-electron bolometer to achieve much faster time constants (τ <; 1 μs) compared to conventional bolometric detectors while not sacrificing sensitivity. We measure both the dark and optically-loaded noise of the detector via a novel method of cross-correlating the outputs of two amplifiers in order to measure noise below the amplifier noise level. From this we measure the photon-noise limited noise-equivalent power of the detector to be 6.6 × 10-17 W Hz-1/2 when observing a 77-Kelvin source.

KW - absorption cooling

KW - electrons

KW - infrared detectors

KW - millimeter waves

KW - slot antennas

KW - strained silicon

KW - terahertz waves

U2 - 10.1109/UCMMT.2015.7460630

DO - 10.1109/UCMMT.2015.7460630

M3 - Conference article in proceedings

SP - 1

EP - 4

BT - Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Brien TLR, Ade PAR, Barry PS, Dunscombe CJ, Leadley DR, Morozov DV et al. Optical characterisation of a strained-silicon cold-electron bolometer at 160 GHz. In Millimeter Waves and THz Technology Workshop (UCMMT), 2015 8th UK, Europe, China. IEEE Institute of Electrical and Electronic Engineers . 2016. p. 1 - 4. 7460630 https://doi.org/10.1109/UCMMT.2015.7460630