Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism

L. Moerl; W. Passenberg; M. Ferstl; D. Schmidt; R. Zhang; Timo Aalto; Mikko Harjanne; Markku Kapulainen; Sammi Ylinen

doi:10.1109/ICIPRM.2010.5516229

Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism

L. Moerl, W. Passenberg, M. Ferstl, D. Schmidt, R. Zhang, Timo Aalto, Mikko Harjanne, Markku Kapulainen, Sammi Ylinen

Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e. V.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

Abstract

Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated.
To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical direction. The photodiodes were flip-chip mounted onto a SOI waveguide platform using thermo-compression bonding.
Comparable high responsivity of around 0.75 A/W was obtained when light was coupled directly into the prism as well as via a SOI waveguide. The responsivity for SOI integrated PDs was found to depend only to a minor extent on input wavelength and polarization. PD bandwidth of up to 10 GHz was measured.
The investigated optical coupling scheme proved to work well also when integrating a PD with an array of ten SOI waveguides which are combined with a star coupler.

Original language	English
Title of host publication	Proceedings
Subtitle of host publication	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	401-404
ISBN (Electronic)	978-1-4244-5922-3
ISBN (Print)	978-1-4244-5919-3
DOIs	https://doi.org/10.1109/ICIPRM.2010.5516229
Publication status	Published - 2010
MoE publication type	A4 Article in a conference publication
Event	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 - Kagawa, Japan Duration: 31 May 2010 → 4 Jun 2010

Conference

Conference	22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010
Abbreviated title	IPRM 2010
Country/Territory	Japan
City	Kagawa
Period	31/05/10 → 4/06/10

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10.1109/ICIPRM.2010.5516229

Cite this

Moerl, L., Passenberg, W., Ferstl, M., Schmidt, D., Zhang, R., Aalto, T., Harjanne, M., Kapulainen, M., & Ylinen, S. (2010). Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism. In Proceedings: 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010 (pp. 401-404). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ICIPRM.2010.5516229

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title = "Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism",

abstract = "Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated. To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical direction. The photodiodes were flip-chip mounted onto a SOI waveguide platform using thermo-compression bonding. Comparable high responsivity of around 0.75 A/W was obtained when light was coupled directly into the prism as well as via a SOI waveguide. The responsivity for SOI integrated PDs was found to depend only to a minor extent on input wavelength and polarization. PD bandwidth of up to 10 GHz was measured. The investigated optical coupling scheme proved to work well also when integrating a PD with an array of ten SOI waveguides which are combined with a star coupler.",

author = "L. Moerl and W. Passenberg and M. Ferstl and D. Schmidt and R. Zhang and Timo Aalto and Mikko Harjanne and Markku Kapulainen and Sammi Ylinen",

year = "2010",

doi = "10.1109/ICIPRM.2010.5516229",

language = "English",

isbn = "978-1-4244-5919-3",

pages = "401--404",

booktitle = "Proceedings",

publisher = "IEEE Institute of Electrical and Electronic Engineers",

address = "United States",

note = "22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, IPRM 2010 ; Conference date: 31-05-2010 Through 04-06-2010",

}

Moerl, L, Passenberg, W, Ferstl, M, Schmidt, D, Zhang, R, Aalto, T , Harjanne, M , Kapulainen, M & Ylinen, S 2010, Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism. in Proceedings: 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010. IEEE Institute of Electrical and Electronic Engineers, pp. 401-404, 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010, Kagawa, Japan, 31/05/10. https://doi.org/10.1109/ICIPRM.2010.5516229

Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism. / Moerl, L.; Passenberg, W.; Ferstl, M. et al.
Proceedings: 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010. IEEE Institute of Electrical and Electronic Engineers, 2010. p. 401-404.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism

AU - Moerl, L.

AU - Passenberg, W.

AU - Ferstl, M.

AU - Schmidt, D.

AU - Zhang, R.

AU - Aalto, Timo

AU - Harjanne, Mikko

AU - Kapulainen, Markku

AU - Ylinen, Sammi

PY - 2010

Y1 - 2010

N2 - Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated. To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical direction. The photodiodes were flip-chip mounted onto a SOI waveguide platform using thermo-compression bonding. Comparable high responsivity of around 0.75 A/W was obtained when light was coupled directly into the prism as well as via a SOI waveguide. The responsivity for SOI integrated PDs was found to depend only to a minor extent on input wavelength and polarization. PD bandwidth of up to 10 GHz was measured. The investigated optical coupling scheme proved to work well also when integrating a PD with an array of ten SOI waveguides which are combined with a star coupler.

AB - Vertical hybrid integration of photodiodes (PD) and silicon-on-insulator (SOI) waveguides has been investigated. To this end, InP-based planar detectors were used onto which a polymer prism was formed to turn the light beam into the vertical direction. The photodiodes were flip-chip mounted onto a SOI waveguide platform using thermo-compression bonding. Comparable high responsivity of around 0.75 A/W was obtained when light was coupled directly into the prism as well as via a SOI waveguide. The responsivity for SOI integrated PDs was found to depend only to a minor extent on input wavelength and polarization. PD bandwidth of up to 10 GHz was measured. The investigated optical coupling scheme proved to work well also when integrating a PD with an array of ten SOI waveguides which are combined with a star coupler.

U2 - 10.1109/ICIPRM.2010.5516229

DO - 10.1109/ICIPRM.2010.5516229

M3 - Conference article in proceedings

SN - 978-1-4244-5919-3

SP - 401

EP - 404

BT - Proceedings

PB - IEEE Institute of Electrical and Electronic Engineers

T2 - 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010

Y2 - 31 May 2010 through 4 June 2010

ER -

Moerl L, Passenberg W, Ferstl M, Schmidt D, Zhang R, Aalto T et al. Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism. In Proceedings: 22nd International Conference on Indium Phosphide and Related Materials, IPRM 2010. IEEE Institute of Electrical and Electronic Engineers. 2010. p. 401-404 doi: 10.1109/ICIPRM.2010.5516229

Optical coupling of planar III-V pin photodiodes and SOI waveguides using an integrated BCB prism

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