Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	806-809
Journal	Physica Status Solidi C: Current Topics in Solid State Physics
Volume	11
Issue number	3-4
DOIs	https://doi.org/10.1002/pssc.201300530
Publication status	Published - 2014
MoE publication type	A1 Journal article-refereed

Access to Document

@article{687da8e629654e868329493e9513403a,

title = "Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation",

author = "Lauri Riuttanen and Henri Nyk{\"a}nen and Sami Suihkonen and Markku Sopanen",

year = "2014",

doi = "10.1002/pssc.201300530",

language = "English",

volume = "11",

pages = "806--809",

journal = "Physica Status Solidi C: Current Topics in Solid State Physics",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "3-4",

}

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Optical degradation and defect activation in MOVPE grown near surface InGaN quantum wells under low energy electron beam irradiation

AU - Riuttanen, Lauri

AU - Nykänen, Henri

AU - Suihkonen, Sami

AU - Sopanen, Markku

PY - 2014

Y1 - 2014

U2 - 10.1002/pssc.201300530

DO - 10.1002/pssc.201300530

M3 - Article

SN - 1862-6351

VL - 11

SP - 806

EP - 809

JO - Physica Status Solidi C: Current Topics in Solid State Physics

JF - Physica Status Solidi C: Current Topics in Solid State Physics

IS - 3-4

ER -