Optical determination of the film thicknesses in multilayer thin film structures

Markku Ylilammi, Timo Ranta-aho

Research output: Contribution to journalArticleScientificpeer-review

234 Citations (Scopus)

Abstract

An optical method for determining the layer thicknesses in a multilayer thin film structure is developed and its performance in terms of accuracy and resolving power is characterized. The effects of layer thicknesses, their indices of refraction, light absorption, measurement wavelength range, thickness non-uniformity and unintentional transition layers are characterized. The measurement procedure is applied to oxide, sulphide and fluoride thin film multilayer structures, up to nine individual layers thick, deposited on a glass substrate using atomic layer deposition. In most cases the method is found reliable and error estimates of film thickness vary between 1 and 50 nm depending on the thin film structure in the sample.

Original languageEnglish
Pages (from-to)56-62
Number of pages7
JournalThin Solid Films
Volume232
Issue number1
DOIs
Publication statusPublished - 1993
MoE publication typeA1 Journal article-refereed

Fingerprint

Multilayer films
Film thickness
film thickness
Thin films
thin films
transition layers
Atomic layer deposition
Optical resolving power
Sulfides
atomic layer epitaxy
electromagnetic absorption
Refraction
Fluorides
nonuniformity
Oxides
Light absorption
laminates
fluorides
sulfides
refraction

Cite this

Ylilammi, Markku ; Ranta-aho, Timo. / Optical determination of the film thicknesses in multilayer thin film structures. In: Thin Solid Films. 1993 ; Vol. 232, No. 1. pp. 56-62.
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Optical determination of the film thicknesses in multilayer thin film structures. / Ylilammi, Markku; Ranta-aho, Timo.

In: Thin Solid Films, Vol. 232, No. 1, 1993, p. 56-62.

Research output: Contribution to journalArticleScientificpeer-review

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AU - Ylilammi, Markku

AU - Ranta-aho, Timo

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N2 - An optical method for determining the layer thicknesses in a multilayer thin film structure is developed and its performance in terms of accuracy and resolving power is characterized. The effects of layer thicknesses, their indices of refraction, light absorption, measurement wavelength range, thickness non-uniformity and unintentional transition layers are characterized. The measurement procedure is applied to oxide, sulphide and fluoride thin film multilayer structures, up to nine individual layers thick, deposited on a glass substrate using atomic layer deposition. In most cases the method is found reliable and error estimates of film thickness vary between 1 and 50 nm depending on the thin film structure in the sample.

AB - An optical method for determining the layer thicknesses in a multilayer thin film structure is developed and its performance in terms of accuracy and resolving power is characterized. The effects of layer thicknesses, their indices of refraction, light absorption, measurement wavelength range, thickness non-uniformity and unintentional transition layers are characterized. The measurement procedure is applied to oxide, sulphide and fluoride thin film multilayer structures, up to nine individual layers thick, deposited on a glass substrate using atomic layer deposition. In most cases the method is found reliable and error estimates of film thickness vary between 1 and 50 nm depending on the thin film structure in the sample.

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DO - 10.1016/0040-6090(93)90762-E

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