Optical integrated structures and circuits on silicon

Dissertation

Jaakko Aarnio

Research output: ThesisDissertationCollection of Articles

Abstract

The silicon nitride optical waveguides, a lateral photodetector and a transistor are integrated monolithically using a modified metal gate CMOS process, showing the feasibility of fabricating both optical and electronic functions on the same chip. Based on this process, two types of integrated optical coupling elements were fabricated for fiberoptic sensor applications. A bidirectional method of measuring propagation losses from scattered light in a channel waveguide is presented. A new type of polarization splitter based on a Fresnel mirror is demonstrated using silicon nitride as a waveguide core. These circuits are designed to operate at a wavelength of 633 nm. Numerical scalar methods were applied to estimate the behaviour of the polarization splitter, and 2, 4 and 16-channel wavelength division multiplexers based on the Fresnel mirror. The theoretical considerations are shown to be in good agreement with experimental data. The silica-on-silicon technology is studied for telecommunication applications and used for a new wide passband wavelength division multiplexer operating at the wavelength regions of 1.3/1.55 EMBED Equation µm. The device was also realized on fused quartz substrate. A new method of controlling stress-induced birefringence in silicon oxynitride single mode waveguides on silicon is demonstrated using precision prism coupling measurement equipment. Experiments were made on doped silica planar waveguides and the results interpreted in order to understand the refractive index behaviour of the films.
Original languageEnglish
QualificationDoctor Degree
Awarding Institution
  • Helsinki University of Technology
Award date28 Aug 1992
Publisher
Publication statusPublished - 1992
MoE publication typeG5 Doctoral dissertation (article)

Fingerprint

waveguides
silicon
silicon nitrides
wavelengths
division
mirrors
silicon dioxide
optical coupling
oxynitrides
polarization
multiplexing
optical waveguides
prisms
birefringence
photometers
telecommunication
CMOS
transistors
quartz
chips

Keywords

  • integrated optics
  • optical waveguides
  • optoelectronics
  • silicon

Cite this

Aarnio, J. (1992). Optical integrated structures and circuits on silicon: Dissertation. VTT Technical Research Centre of Finland.
Aarnio, Jaakko. / Optical integrated structures and circuits on silicon : Dissertation. VTT Technical Research Centre of Finland, 1992. 133 p.
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abstract = "The silicon nitride optical waveguides, a lateral photodetector and a transistor are integrated monolithically using a modified metal gate CMOS process, showing the feasibility of fabricating both optical and electronic functions on the same chip. Based on this process, two types of integrated optical coupling elements were fabricated for fiberoptic sensor applications. A bidirectional method of measuring propagation losses from scattered light in a channel waveguide is presented. A new type of polarization splitter based on a Fresnel mirror is demonstrated using silicon nitride as a waveguide core. These circuits are designed to operate at a wavelength of 633 nm. Numerical scalar methods were applied to estimate the behaviour of the polarization splitter, and 2, 4 and 16-channel wavelength division multiplexers based on the Fresnel mirror. The theoretical considerations are shown to be in good agreement with experimental data. The silica-on-silicon technology is studied for telecommunication applications and used for a new wide passband wavelength division multiplexer operating at the wavelength regions of 1.3/1.55 EMBED Equation µm. The device was also realized on fused quartz substrate. A new method of controlling stress-induced birefringence in silicon oxynitride single mode waveguides on silicon is demonstrated using precision prism coupling measurement equipment. Experiments were made on doped silica planar waveguides and the results interpreted in order to understand the refractive index behaviour of the films.",
keywords = "integrated optics, optical waveguides, optoelectronics, silicon",
author = "Jaakko Aarnio",
note = "Project code: PUOT130",
year = "1992",
language = "English",
series = "VTT Publications",
publisher = "VTT Technical Research Centre of Finland",
number = "106",
address = "Finland",
school = "Helsinki University of Technology",

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Aarnio, J 1992, 'Optical integrated structures and circuits on silicon: Dissertation', Doctor Degree, Helsinki University of Technology.

Optical integrated structures and circuits on silicon : Dissertation. / Aarnio, Jaakko.

VTT Technical Research Centre of Finland, 1992. 133 p.

Research output: ThesisDissertationCollection of Articles

TY - THES

T1 - Optical integrated structures and circuits on silicon

T2 - Dissertation

AU - Aarnio, Jaakko

N1 - Project code: PUOT130

PY - 1992

Y1 - 1992

N2 - The silicon nitride optical waveguides, a lateral photodetector and a transistor are integrated monolithically using a modified metal gate CMOS process, showing the feasibility of fabricating both optical and electronic functions on the same chip. Based on this process, two types of integrated optical coupling elements were fabricated for fiberoptic sensor applications. A bidirectional method of measuring propagation losses from scattered light in a channel waveguide is presented. A new type of polarization splitter based on a Fresnel mirror is demonstrated using silicon nitride as a waveguide core. These circuits are designed to operate at a wavelength of 633 nm. Numerical scalar methods were applied to estimate the behaviour of the polarization splitter, and 2, 4 and 16-channel wavelength division multiplexers based on the Fresnel mirror. The theoretical considerations are shown to be in good agreement with experimental data. The silica-on-silicon technology is studied for telecommunication applications and used for a new wide passband wavelength division multiplexer operating at the wavelength regions of 1.3/1.55 EMBED Equation µm. The device was also realized on fused quartz substrate. A new method of controlling stress-induced birefringence in silicon oxynitride single mode waveguides on silicon is demonstrated using precision prism coupling measurement equipment. Experiments were made on doped silica planar waveguides and the results interpreted in order to understand the refractive index behaviour of the films.

AB - The silicon nitride optical waveguides, a lateral photodetector and a transistor are integrated monolithically using a modified metal gate CMOS process, showing the feasibility of fabricating both optical and electronic functions on the same chip. Based on this process, two types of integrated optical coupling elements were fabricated for fiberoptic sensor applications. A bidirectional method of measuring propagation losses from scattered light in a channel waveguide is presented. A new type of polarization splitter based on a Fresnel mirror is demonstrated using silicon nitride as a waveguide core. These circuits are designed to operate at a wavelength of 633 nm. Numerical scalar methods were applied to estimate the behaviour of the polarization splitter, and 2, 4 and 16-channel wavelength division multiplexers based on the Fresnel mirror. The theoretical considerations are shown to be in good agreement with experimental data. The silica-on-silicon technology is studied for telecommunication applications and used for a new wide passband wavelength division multiplexer operating at the wavelength regions of 1.3/1.55 EMBED Equation µm. The device was also realized on fused quartz substrate. A new method of controlling stress-induced birefringence in silicon oxynitride single mode waveguides on silicon is demonstrated using precision prism coupling measurement equipment. Experiments were made on doped silica planar waveguides and the results interpreted in order to understand the refractive index behaviour of the films.

KW - integrated optics

KW - optical waveguides

KW - optoelectronics

KW - silicon

M3 - Dissertation

T3 - VTT Publications

PB - VTT Technical Research Centre of Finland

ER -

Aarnio J. Optical integrated structures and circuits on silicon: Dissertation. VTT Technical Research Centre of Finland, 1992. 133 p.