Optical interconnects based on VCSELs and low-loss silicon photonics

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

1 Citation (Scopus)

Abstract

Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 μm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.

Original languageEnglish
Title of host publicationOptical Interconnects XVIII
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Electronic)978-1-5106-1561-8
DOIs
Publication statusPublished - 1 Jan 2018
MoE publication typeA4 Article in a conference publication
EventOptical Interconnects XVIII 2018 - San Francisco, United States
Duration: 29 Jan 201831 Jan 2018

Publication series

SeriesProceedings of SPIE
Volume10538

Conference

ConferenceOptical Interconnects XVIII 2018
CountryUnited States
CitySan Francisco
Period29/01/1831/01/18

Fingerprint

Optical Interconnects
Silicon Photonics
Silicon-on-insulator
Vertical-cavity Surface-emitting Laser (VCSEL)
optical interconnects
Optical interconnects
Surface emitting lasers
Silicon
surface emitting lasers
Photonics
Waveguides
photonics
Waveguide
cavities
Silicon on insulator technology
silicon
insulators
waveguides
Polarization
Photodetector

Keywords

  • Faraday rotator
  • Hybrid integration
  • Long-wavelength VCSEL
  • Optical interconnect
  • Polarization independent
  • Silicon photonics
  • Silicon-on-insulator
  • Wavelength multiplexer

Cite this

Aalto, T., Harjanne, M., Karppinen, M., Cherchi, M., Sitomaniemi, A., Ollila, J., ... Neumeyr, C. (2018). Optical interconnects based on VCSELs and low-loss silicon photonics. In Optical Interconnects XVIII [1053816] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 10538 https://doi.org/10.1117/12.2290710
Aalto, Timo ; Harjanne, Mikko ; Karppinen, Mikko ; Cherchi, Matteo ; Sitomaniemi, Aila ; Ollila, Jyrki ; Malacarne, Antonio ; Neumeyr, Christian. / Optical interconnects based on VCSELs and low-loss silicon photonics. Optical Interconnects XVIII. International Society for Optics and Photonics SPIE, 2018. (Proceedings of SPIE, Vol. 10538).
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abstract = "Silicon photonics with micron-scale Si waveguides offers most of the benefits of submicron SOI technology while avoiding most of its limitations. In particular, thick silicon-on-insulator (SOI) waveguides offer 0.1 dB/cm propagation loss, polarization independency, broadband single-mode (SM) operation from 1.2 to >4 μm wavelength and ability to transmit high optical powers (>1 W). Here we describe the feasibility of Thick-SOI technology for advanced optical interconnects. With 12 μm SOI waveguides we demonstrate efficient coupling between standard single-mode fibers, vertical-cavity surface-emitting lasers (VCSELs) and photodetectors (PDs), as well as wavelength multiplexing in small footprint. Discrete VCSELs and PDs already support 28 Gb/s on-off keying (OOK), which shows a path towards 50-100 Gb/s bandwidth per wavelength by using more advanced modulation formats like PAM4. Directly modulated VCSELs enable very power-efficient optical interconnects for up to 40 km distance. Furthermore, with 3 μm SOI waveguides we demonstrate extremely dense and low-loss integration of numerous optical functions, such as multiplexers, filters, switches and delay lines. Also polarization independent and athermal operation is demonstrated. The latter is achieved by using short polymer waveguides to compensate for the thermo-optic effect in silicon. New concepts for isolator integration and polarization rotation are also explained.",
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Aalto, T, Harjanne, M, Karppinen, M, Cherchi, M, Sitomaniemi, A, Ollila, J, Malacarne, A & Neumeyr, C 2018, Optical interconnects based on VCSELs and low-loss silicon photonics. in Optical Interconnects XVIII., 1053816, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 10538, Optical Interconnects XVIII 2018, San Francisco, United States, 29/01/18. https://doi.org/10.1117/12.2290710

Optical interconnects based on VCSELs and low-loss silicon photonics. / Aalto, Timo; Harjanne, Mikko; Karppinen, Mikko; Cherchi, Matteo; Sitomaniemi, Aila; Ollila, Jyrki; Malacarne, Antonio; Neumeyr, Christian.

Optical Interconnects XVIII. International Society for Optics and Photonics SPIE, 2018. 1053816 (Proceedings of SPIE, Vol. 10538).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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Aalto T, Harjanne M, Karppinen M, Cherchi M, Sitomaniemi A, Ollila J et al. Optical interconnects based on VCSELs and low-loss silicon photonics. In Optical Interconnects XVIII. International Society for Optics and Photonics SPIE. 2018. 1053816. (Proceedings of SPIE, Vol. 10538). https://doi.org/10.1117/12.2290710