Optical modal gain in multiple quantum-well semiconductor lasers based on InP

M. S. Wartak (Corresponding Author), P. Weetman, Teemu Alajoki, Janne Aikio, Veli Heikkinen, N. A. Pikhtin, P. Rusek

Research output: Contribution to journalArticleScientificpeer-review

5 Citations (Scopus)

Abstract

An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor lasers based on InP in terms of the current at electrodes is presented. The link between the current at the electrodes and the density of carriers inside each quantum well was provided by rate equations with the inclusion of carrier transport effects. Description of hole dispersion is based on a 4 × 4 Luttinger–Kohn Hamiltonian and was done with the electrostatic effects of the carrier charges. Electrostatic effects were included via a self-consistent solution of electron and hole wave equations and the Poisson equation. The optical gain for the TE (transverse electric) mode has been determined with the inclusion of non-Markovian effects, Coulombic enhancement, and band-gap renormalization. The theoretical approach was compared with experimental measurements of the optical gain on a laser structure consisting of four quantum wells using the Hakki–Paoli method. The important role played by the leakage current was revealed when the results were compared.
Original languageEnglish
Pages (from-to)53-66
Number of pages14
JournalCanadian Journal of Physics
Volume84
Issue number1
DOIs
Publication statusPublished - 2006
MoE publication typeA1 Journal article-refereed

Fingerprint

quantum well lasers
semiconductor lasers
quantum wells
inclusions
electrostatics
electrodes
Poisson equation
wave equations
charge carriers
leakage
augmentation
lasers
electrons

Keywords

  • quantum wells
  • semiconductor lasers

Cite this

Wartak, M. S., Weetman, P., Alajoki, T., Aikio, J., Heikkinen, V., Pikhtin, N. A., & Rusek, P. (2006). Optical modal gain in multiple quantum-well semiconductor lasers based on InP. Canadian Journal of Physics, 84(1), 53-66. https://doi.org/10.1139/p06-005
Wartak, M. S. ; Weetman, P. ; Alajoki, Teemu ; Aikio, Janne ; Heikkinen, Veli ; Pikhtin, N. A. ; Rusek, P. / Optical modal gain in multiple quantum-well semiconductor lasers based on InP. In: Canadian Journal of Physics. 2006 ; Vol. 84, No. 1. pp. 53-66.
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abstract = "An approach to determine the optical modal gain spectra in multiple quantum-well semiconductor lasers based on InP in terms of the current at electrodes is presented. The link between the current at the electrodes and the density of carriers inside each quantum well was provided by rate equations with the inclusion of carrier transport effects. Description of hole dispersion is based on a 4 × 4 Luttinger–Kohn Hamiltonian and was done with the electrostatic effects of the carrier charges. Electrostatic effects were included via a self-consistent solution of electron and hole wave equations and the Poisson equation. The optical gain for the TE (transverse electric) mode has been determined with the inclusion of non-Markovian effects, Coulombic enhancement, and band-gap renormalization. The theoretical approach was compared with experimental measurements of the optical gain on a laser structure consisting of four quantum wells using the Hakki–Paoli method. The important role played by the leakage current was revealed when the results were compared.",
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Wartak, MS, Weetman, P, Alajoki, T, Aikio, J, Heikkinen, V, Pikhtin, NA & Rusek, P 2006, 'Optical modal gain in multiple quantum-well semiconductor lasers based on InP', Canadian Journal of Physics, vol. 84, no. 1, pp. 53-66. https://doi.org/10.1139/p06-005

Optical modal gain in multiple quantum-well semiconductor lasers based on InP. / Wartak, M. S. (Corresponding Author); Weetman, P.; Alajoki, Teemu; Aikio, Janne; Heikkinen, Veli; Pikhtin, N. A.; Rusek, P.

In: Canadian Journal of Physics, Vol. 84, No. 1, 2006, p. 53-66.

Research output: Contribution to journalArticleScientificpeer-review

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