Optical properties of atomic layer deposited materials and their application in silicon waveguides

T. Alasaarela, Jussi Hiltunen, A. Khanna, A. Säynätjoki, A. Tervonen, S. Honkanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Atomic layer deposition (ALD) is a promising method to grow optical materials on waveguide structures. Propagation loss analysis indicates that amorphous TiO2 and Al2O3 films are promising for the waveguide purposes.
Instead, polycrystalline ZnO does not work properly as a waveguide by itself, but the waveguiding properties can probably be enhanced by introducing intermediate Al2O3 layers. The wide variety of available materials, conformal growth properties and low scattering losses of many ALD films enable their usage in various waveguide applications.
Experimental coating of silicon waveguides is discussed.
Original languageEnglish
Title of host publicationProceedings of SPIE
Subtitle of host publicationOptical Components and Materials VII
PublisherInternational Society for Optics and Photonics SPIE
ISBN (Print)978-0-8194-7994-5
DOIs
Publication statusPublished - 2010
MoE publication typeA4 Article in a conference publication
EventOptical Components and Materials VII - San Francisco, CA, United States
Duration: 26 Jan 201028 Jan 2010

Publication series

SeriesProceedings of SPIE
Volume7598
ISSN0277-786X

Conference

ConferenceOptical Components and Materials VII
CountryUnited States
CitySan Francisco, CA
Period26/01/1028/01/10

Keywords

  • atomic layer deposition
  • ALD
  • silicon photonics
  • optical waveguides
  • silicon waveguides
  • waveguide

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    Alasaarela, T., Hiltunen, J., Khanna, A., Säynätjoki, A., Tervonen, A., & Honkanen, S. (2010). Optical properties of atomic layer deposited materials and their application in silicon waveguides. In Proceedings of SPIE : Optical Components and Materials VII [75980D] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 7598 https://doi.org/10.1117/12.841524