The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.
|Title of host publication||IEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995|
|Publisher||IEEE Institute of Electrical and Electronic Engineers|
|Publication status||Published - 1995|
|MoE publication type||A4 Article in a conference publication|
Ahopelto, J., Lipsanen, H., & Sopanen, M. (1995). Optical properties of self-organized InGaAs/InP dots. In IEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995 (pp. 311-314). IEEE Institute of Electrical and Electronic Engineers. https://doi.org/10.1109/ICIPRM.1995.522142