Optical properties of self-organized InGaAs/InP dots

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

2 Citations (Scopus)

Abstract

The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.
Original languageEnglish
Title of host publicationIEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995
PublisherIEEE Institute of Electrical and Electronic Engineers
Pages311-314
ISBN (Print)0-7803-2147-2
DOIs
Publication statusPublished - 1995
MoE publication typeA4 Article in a conference publication

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Ahopelto, J., Lipsanen, H., & Sopanen, M. (1995). Optical properties of self-organized InGaAs/InP dots. In IEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995 (pp. 311-314). IEEE Institute of Electrical and Electronic Engineers . https://doi.org/10.1109/ICIPRM.1995.522142