Optical properties of self-organized InGaAs/InP dots

Jouni Ahopelto; Harri Lipsanen; Markku Sopanen

doi:10.1109/ICIPRM.1995.522142

Optical properties of self-organized InGaAs/InP dots

Jouni Ahopelto, Harri Lipsanen, Markku Sopanen

VTT Technical Research Centre of Finland

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

2 Citations (Scopus)

Abstract

The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.

Original language	English
Title of host publication	IEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995
Publisher	IEEE Institute of Electrical and Electronic Engineers
Pages	311-314
ISBN (Print)	0-7803-2147-2
DOIs	https://doi.org/10.1109/ICIPRM.1995.522142
Publication status	Published - 1995
MoE publication type	A4 Article in a conference publication

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10.1109/ICIPRM.1995.522142

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title = "Optical properties of self-organized InGaAs/InP dots",

abstract = "The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.",

author = "Jouni Ahopelto and Harri Lipsanen and Markku Sopanen",

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Optical properties of self-organized InGaAs/InP dots. / Ahopelto, Jouni; Lipsanen, Harri; Sopanen, Markku.
IEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995. IEEE Institute of Electrical and Electronic Engineers, 1995. p. 311-314.

Research output: Chapter in Book/Report/Conference proceeding › Conference article in proceedings › Scientific › peer-review

TY - GEN

T1 - Optical properties of self-organized InGaAs/InP dots

AU - Ahopelto, Jouni

AU - Lipsanen, Harri

AU - Sopanen, Markku

PY - 1995

Y1 - 1995

N2 - The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.

AB - The possibility of tuning the emission wavelength and of reducing the linewidth of self-organized dots is studied. Thin layers of In/sub 0.5/Ga/sub 0.5/As were selectively deposited on nanoscale InP islands on (100)GaAs. A tuning range of 100 meV was achieved for the emission from the dots. Also, a minimum FWHM of 8.5 meV was measured from an ensemble of dots, showing that the heteroepitaxial layer on the islands tends to homogenize the active volume of the dots.

U2 - 10.1109/ICIPRM.1995.522142

DO - 10.1109/ICIPRM.1995.522142

M3 - Conference article in proceedings

SN - 0-7803-2147-2

SP - 311

EP - 314

BT - IEEE Catalog 95CH35720. 7th International Conference on Indium Phosphide and Related Materials (IPRM'95). Sapporo, 9 - 13 May 1995

PB - IEEE Institute of Electrical and Electronic Engineers

ER -

Optical properties of self-organized InGaAs/InP dots

Abstract

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