Optical response of strained- and unstrained-silicon cold-electron bolometers

Tom Brien, Peter Ade, Peter S. Barry, Chris J. Dunscombe, David R. Leadley, Dmitry V. Morozov, Maksym Myronov, Evan Parker, Martin J. Prest, Mika Prunnila, Rashmi V. Sudiwala, Terry E. Whall, P. D. Mauskopf

    Research output: Contribution to journalArticleScientificpeer-review

    1 Citation (Scopus)

    Abstract

    We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.
    Original languageEnglish
    Pages (from-to)231-237
    JournalJournal of Low Temperature Physics
    Volume184
    Issue number1-2
    DOIs
    Publication statusPublished - 2016
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Bolometers
    bolometers
    Silicon
    Electrons
    silicon
    absorbers
    electrons
    Radiation
    radiation
    Slot antennas
    slot antennas
    Aluminum
    control equipment
    Lenses
    Photons
    amplifiers
    lenses
    aluminum
    output
    photons

    Keywords

    • infrared detectors
    • lens antennas
    • silicon
    • slot antennas
    • strained silicon
    • cold electron bolometers
    • doped silicon
    • measure noise
    • noise equivalent power
    • optical characterisation
    • optical response
    • photon noise
    • silicon absorbers

    Cite this

    Brien, T., Ade, P., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., ... Mauskopf, P. D. (2016). Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184(1-2), 231-237. https://doi.org/10.1007/s10909-016-1569-x
    Brien, Tom ; Ade, Peter ; Barry, Peter S. ; Dunscombe, Chris J. ; Leadley, David R. ; Morozov, Dmitry V. ; Myronov, Maksym ; Parker, Evan ; Prest, Martin J. ; Prunnila, Mika ; Sudiwala, Rashmi V. ; Whall, Terry E. ; Mauskopf, P. D. / Optical response of strained- and unstrained-silicon cold-electron bolometers. In: Journal of Low Temperature Physics. 2016 ; Vol. 184, No. 1-2. pp. 231-237.
    @article{deaa083ea926425f9adaa45e60a0025a,
    title = "Optical response of strained- and unstrained-silicon cold-electron bolometers",
    abstract = "We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.",
    keywords = "infrared detectors, lens antennas, silicon, slot antennas, strained silicon, cold electron bolometers, doped silicon, measure noise, noise equivalent power, optical characterisation, optical response, photon noise, silicon absorbers",
    author = "Tom Brien and Peter Ade and Barry, {Peter S.} and Dunscombe, {Chris J.} and Leadley, {David R.} and Morozov, {Dmitry V.} and Maksym Myronov and Evan Parker and Prest, {Martin J.} and Mika Prunnila and Sudiwala, {Rashmi V.} and Whall, {Terry E.} and Mauskopf, {P. D.}",
    year = "2016",
    doi = "10.1007/s10909-016-1569-x",
    language = "English",
    volume = "184",
    pages = "231--237",
    journal = "Journal of Low Temperature Physics",
    issn = "0022-2291",
    publisher = "Springer",
    number = "1-2",

    }

    Brien, T, Ade, P, Barry, PS, Dunscombe, CJ, Leadley, DR, Morozov, DV, Myronov, M, Parker, E, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, PD 2016, 'Optical response of strained- and unstrained-silicon cold-electron bolometers', Journal of Low Temperature Physics, vol. 184, no. 1-2, pp. 231-237. https://doi.org/10.1007/s10909-016-1569-x

    Optical response of strained- and unstrained-silicon cold-electron bolometers. / Brien, Tom; Ade, Peter; Barry, Peter S.; Dunscombe, Chris J.; Leadley, David R.; Morozov, Dmitry V.; Myronov, Maksym; Parker, Evan; Prest, Martin J.; Prunnila, Mika; Sudiwala, Rashmi V.; Whall, Terry E.; Mauskopf, P. D.

    In: Journal of Low Temperature Physics, Vol. 184, No. 1-2, 2016, p. 231-237.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Optical response of strained- and unstrained-silicon cold-electron bolometers

    AU - Brien, Tom

    AU - Ade, Peter

    AU - Barry, Peter S.

    AU - Dunscombe, Chris J.

    AU - Leadley, David R.

    AU - Morozov, Dmitry V.

    AU - Myronov, Maksym

    AU - Parker, Evan

    AU - Prest, Martin J.

    AU - Prunnila, Mika

    AU - Sudiwala, Rashmi V.

    AU - Whall, Terry E.

    AU - Mauskopf, P. D.

    PY - 2016

    Y1 - 2016

    N2 - We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

    AB - We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

    KW - infrared detectors

    KW - lens antennas

    KW - silicon

    KW - slot antennas

    KW - strained silicon

    KW - cold electron bolometers

    KW - doped silicon

    KW - measure noise

    KW - noise equivalent power

    KW - optical characterisation

    KW - optical response

    KW - photon noise

    KW - silicon absorbers

    U2 - 10.1007/s10909-016-1569-x

    DO - 10.1007/s10909-016-1569-x

    M3 - Article

    VL - 184

    SP - 231

    EP - 237

    JO - Journal of Low Temperature Physics

    JF - Journal of Low Temperature Physics

    SN - 0022-2291

    IS - 1-2

    ER -