Optical response of strained- and unstrained-silicon cold-electron bolometers

Tom Brien, Peter Ade, Peter S. Barry, Chris J. Dunscombe, David R. Leadley, Dmitry V. Morozov, Maksym Myronov, Evan Parker, Martin J. Prest, Mika Prunnila, Rashmi V. Sudiwala, Terry E. Whall, P. D. Mauskopf

    Research output: Contribution to journalArticleScientificpeer-review

    5 Citations (Scopus)


    We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.
    Original languageEnglish
    Pages (from-to)231-237
    JournalJournal of Low Temperature Physics
    Issue number1-2
    Publication statusPublished - 2016
    MoE publication typeA1 Journal article-refereed


    • infrared detectors
    • lens antennas
    • silicon
    • slot antennas
    • strained silicon
    • cold electron bolometers
    • doped silicon
    • measure noise
    • noise equivalent power
    • optical characterisation
    • optical response
    • photon noise
    • silicon absorbers


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