Optical response of strained- and unstrained-silicon cold-electron bolometers

Tom Brien, Peter Ade, Peter S. Barry, Chris J. Dunscombe, David R. Leadley, Dmitry V. Morozov, Maksym Myronov, Evan Parker, Martin J. Prest, Mika Prunnila, Rashmi V. Sudiwala, Terry E. Whall, P. D. Mauskopf

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.
Original languageEnglish
Pages (from-to)231-237
JournalJournal of Low Temperature Physics
Volume184
Issue number1-2
DOIs
Publication statusPublished - 2016
MoE publication typeA1 Journal article-refereed

Fingerprint

Bolometers
bolometers
Silicon
Electrons
silicon
absorbers
electrons
Radiation
radiation
Slot antennas
slot antennas
Aluminum
control equipment
Lenses
Photons
amplifiers
lenses
aluminum
output
photons

Keywords

  • infrared detectors
  • lens antennas
  • silicon
  • slot antennas
  • strained silicon
  • cold electron bolometers
  • doped silicon
  • measure noise
  • noise equivalent power
  • optical characterisation
  • optical response
  • photon noise
  • silicon absorbers

Cite this

Brien, T., Ade, P., Barry, P. S., Dunscombe, C. J., Leadley, D. R., Morozov, D. V., ... Mauskopf, P. D. (2016). Optical response of strained- and unstrained-silicon cold-electron bolometers. Journal of Low Temperature Physics, 184(1-2), 231-237. https://doi.org/10.1007/s10909-016-1569-x
Brien, Tom ; Ade, Peter ; Barry, Peter S. ; Dunscombe, Chris J. ; Leadley, David R. ; Morozov, Dmitry V. ; Myronov, Maksym ; Parker, Evan ; Prest, Martin J. ; Prunnila, Mika ; Sudiwala, Rashmi V. ; Whall, Terry E. ; Mauskopf, P. D. / Optical response of strained- and unstrained-silicon cold-electron bolometers. In: Journal of Low Temperature Physics. 2016 ; Vol. 184, No. 1-2. pp. 231-237.
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title = "Optical response of strained- and unstrained-silicon cold-electron bolometers",
abstract = "We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.",
keywords = "infrared detectors, lens antennas, silicon, slot antennas, strained silicon, cold electron bolometers, doped silicon, measure noise, noise equivalent power, optical characterisation, optical response, photon noise, silicon absorbers",
author = "Tom Brien and Peter Ade and Barry, {Peter S.} and Dunscombe, {Chris J.} and Leadley, {David R.} and Morozov, {Dmitry V.} and Maksym Myronov and Evan Parker and Prest, {Martin J.} and Mika Prunnila and Sudiwala, {Rashmi V.} and Whall, {Terry E.} and Mauskopf, {P. D.}",
year = "2016",
doi = "10.1007/s10909-016-1569-x",
language = "English",
volume = "184",
pages = "231--237",
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Brien, T, Ade, P, Barry, PS, Dunscombe, CJ, Leadley, DR, Morozov, DV, Myronov, M, Parker, E, Prest, MJ, Prunnila, M, Sudiwala, RV, Whall, TE & Mauskopf, PD 2016, 'Optical response of strained- and unstrained-silicon cold-electron bolometers', Journal of Low Temperature Physics, vol. 184, no. 1-2, pp. 231-237. https://doi.org/10.1007/s10909-016-1569-x

Optical response of strained- and unstrained-silicon cold-electron bolometers. / Brien, Tom; Ade, Peter; Barry, Peter S.; Dunscombe, Chris J.; Leadley, David R.; Morozov, Dmitry V.; Myronov, Maksym; Parker, Evan; Prest, Martin J.; Prunnila, Mika; Sudiwala, Rashmi V.; Whall, Terry E.; Mauskopf, P. D.

In: Journal of Low Temperature Physics, Vol. 184, No. 1-2, 2016, p. 231-237.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Optical response of strained- and unstrained-silicon cold-electron bolometers

AU - Brien, Tom

AU - Ade, Peter

AU - Barry, Peter S.

AU - Dunscombe, Chris J.

AU - Leadley, David R.

AU - Morozov, Dmitry V.

AU - Myronov, Maksym

AU - Parker, Evan

AU - Prest, Martin J.

AU - Prunnila, Mika

AU - Sudiwala, Rashmi V.

AU - Whall, Terry E.

AU - Mauskopf, P. D.

PY - 2016

Y1 - 2016

N2 - We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

AB - We describe the optical characterisation of two silicon cold-electron bolometers each consisting of a small ((Formula presented.)) island of degenerately doped silicon with superconducting aluminium contacts. Radiation is coupled into the silicon absorber with a twin-slot antenna designed to couple to 160-GHz radiation through a silicon lens. The first device has a highly doped silicon absorber, the second has a highly doped strained-silicon absorber. Using a novel method of cross-correlating the outputs from two parallel amplifiers, we measure noise-equivalent powers of (Formula presented.) and (Formula presented.) for the control and strained device, respectively, when observing radiation from a 77-K source. In the case of the strained device, the noise-equivalent power is limited by the photon noise.

KW - infrared detectors

KW - lens antennas

KW - silicon

KW - slot antennas

KW - strained silicon

KW - cold electron bolometers

KW - doped silicon

KW - measure noise

KW - noise equivalent power

KW - optical characterisation

KW - optical response

KW - photon noise

KW - silicon absorbers

U2 - 10.1007/s10909-016-1569-x

DO - 10.1007/s10909-016-1569-x

M3 - Article

VL - 184

SP - 231

EP - 237

JO - Journal of Low Temperature Physics

JF - Journal of Low Temperature Physics

SN - 0022-2291

IS - 1-2

ER -