Optical temperature measurement method for glowing microcomponents

M. Shpak, P. Kärhä, M. Ojanen, E. Ikonen, M. Heinonen

Research output: Contribution to journalArticleScientificpeer-review

Abstract

A measurement method and measurement results for the temperature of miniature microbridge emitters integrated on silicon are presented. First, the extinction coefficient of highly doped silicon was measured at high temperatures: a piece of a silicon-on-insulator wafer was heated to several temperatures in a high-temperature furnace, and the emitted spectra were measured using a spectroradiometer with focusing optics. The optical behavior of the sample was modeled with Fresnel equations. The extinction coefficient of silicon was obtained from the model, because other optical properties, the dimensions, and the temperature of the structure were known. An emissivity model was then developed and adapted for the microbridge with the known extinction coefficient values, which allows the temperature to be determined from the measured spectrum. We can now measure optically the temperatures of the microbridges of dimensions 400 × 25 × 4 μm 3 in the temperature range 600 °C to 1200 °C with an uncertainty of 100°C.

Original languageEnglish
Pages (from-to)1762-1770
Number of pages9
JournalInternational Journal of Thermophysics
Volume31
Issue number8-9
DOIs
Publication statusPublished - 2010
MoE publication typeA1 Journal article-refereed

Fingerprint

temperature measurement
extinction
silicon
temperature
coefficients
spectroradiometers
emissivity
furnaces
emitters
insulators
wafers
optics
optical properties

Keywords

  • Emissivity
  • High temperatures
  • Microbridge
  • Refractive index
  • Silicon

Cite this

Shpak, M. ; Kärhä, P. ; Ojanen, M. ; Ikonen, E. ; Heinonen, M. / Optical temperature measurement method for glowing microcomponents. In: International Journal of Thermophysics. 2010 ; Vol. 31, No. 8-9. pp. 1762-1770.
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abstract = "A measurement method and measurement results for the temperature of miniature microbridge emitters integrated on silicon are presented. First, the extinction coefficient of highly doped silicon was measured at high temperatures: a piece of a silicon-on-insulator wafer was heated to several temperatures in a high-temperature furnace, and the emitted spectra were measured using a spectroradiometer with focusing optics. The optical behavior of the sample was modeled with Fresnel equations. The extinction coefficient of silicon was obtained from the model, because other optical properties, the dimensions, and the temperature of the structure were known. An emissivity model was then developed and adapted for the microbridge with the known extinction coefficient values, which allows the temperature to be determined from the measured spectrum. We can now measure optically the temperatures of the microbridges of dimensions 400 × 25 × 4 μm 3 in the temperature range 600 °C to 1200 °C with an uncertainty of 100°C.",
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Optical temperature measurement method for glowing microcomponents. / Shpak, M.; Kärhä, P.; Ojanen, M.; Ikonen, E.; Heinonen, M.

In: International Journal of Thermophysics, Vol. 31, No. 8-9, 2010, p. 1762-1770.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Optical temperature measurement method for glowing microcomponents

AU - Shpak, M.

AU - Kärhä, P.

AU - Ojanen, M.

AU - Ikonen, E.

AU - Heinonen, M.

PY - 2010

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N2 - A measurement method and measurement results for the temperature of miniature microbridge emitters integrated on silicon are presented. First, the extinction coefficient of highly doped silicon was measured at high temperatures: a piece of a silicon-on-insulator wafer was heated to several temperatures in a high-temperature furnace, and the emitted spectra were measured using a spectroradiometer with focusing optics. The optical behavior of the sample was modeled with Fresnel equations. The extinction coefficient of silicon was obtained from the model, because other optical properties, the dimensions, and the temperature of the structure were known. An emissivity model was then developed and adapted for the microbridge with the known extinction coefficient values, which allows the temperature to be determined from the measured spectrum. We can now measure optically the temperatures of the microbridges of dimensions 400 × 25 × 4 μm 3 in the temperature range 600 °C to 1200 °C with an uncertainty of 100°C.

AB - A measurement method and measurement results for the temperature of miniature microbridge emitters integrated on silicon are presented. First, the extinction coefficient of highly doped silicon was measured at high temperatures: a piece of a silicon-on-insulator wafer was heated to several temperatures in a high-temperature furnace, and the emitted spectra were measured using a spectroradiometer with focusing optics. The optical behavior of the sample was modeled with Fresnel equations. The extinction coefficient of silicon was obtained from the model, because other optical properties, the dimensions, and the temperature of the structure were known. An emissivity model was then developed and adapted for the microbridge with the known extinction coefficient values, which allows the temperature to be determined from the measured spectrum. We can now measure optically the temperatures of the microbridges of dimensions 400 × 25 × 4 μm 3 in the temperature range 600 °C to 1200 °C with an uncertainty of 100°C.

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