Abstract
Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3<formula><tex>$\mu$</tex></formula>m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-<formula><tex>$\mu$</tex></formula>m SiGe driver circuit wire-bonded to a novel dual 1.3<formula><tex>$\mu$</tex></formula>m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.
| Original language | English |
|---|---|
| Pages (from-to) | 1527-1536 |
| Number of pages | 10 |
| Journal | Journal of Lightwave Technology |
| Volume | 36 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1 May 2018 |
| MoE publication type | A1 Journal article-refereed |
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Keywords
- Access networks
- Bandwidth
- BiCMOS integrated circuits
- Driver circuits
- Modulation
- Optical fiber
- Optical intensity modulation
- Optical interconnections
- Optical transmitters
- Temperature measurement
- Vertical cavity surface emitting lasers
Cite this
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Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond. / Malacarne, Antonio; Neumeyr, Christian; Soenen, Wouter; Falconi, Fabio; Porzi, Claudio; Aalto, Timo; Rosskopf, J.; Bauwelinck, Johan; Bogoni, Antonella.
In: Journal of Lightwave Technology, Vol. 36, No. 9, 01.05.2018, p. 1527-1536.Research output: Contribution to journal › Article › Scientific › peer-review
TY - JOUR
T1 - Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond
AU - Malacarne, Antonio
AU - Neumeyr, Christian
AU - Soenen, Wouter
AU - Falconi, Fabio
AU - Porzi, Claudio
AU - Aalto, Timo
AU - Rosskopf, J.
AU - Bauwelinck, Johan
AU - Bogoni, Antonella
PY - 2018/5/1
Y1 - 2018/5/1
N2 - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3$\mu$m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-$\mu$m SiGe driver circuit wire-bonded to a novel dual 1.3$\mu$m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.
AB - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3$\mu$m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-$\mu$m SiGe driver circuit wire-bonded to a novel dual 1.3$\mu$m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.
KW - Access networks
KW - Bandwidth
KW - BiCMOS integrated circuits
KW - Driver circuits
KW - Modulation
KW - Optical fiber
KW - Optical intensity modulation
KW - Optical interconnections
KW - Optical transmitters
KW - Temperature measurement
KW - Vertical cavity surface emitting lasers
U2 - 10.1109/JLT.2017.2782882
DO - 10.1109/JLT.2017.2782882
M3 - Article
VL - 36
SP - 1527
EP - 1536
JO - Journal of Lightwave Technology
JF - Journal of Lightwave Technology
SN - 0733-8724
IS - 9
ER -