Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond

Antonio Malacarne, Christian Neumeyr, Wouter Soenen, Fabio Falconi, Claudio Porzi, Timo Aalto, J. Rosskopf, Johan Bauwelinck, Antonella Bogoni

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)

    Abstract

    Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3<formula><tex>$\mu$</tex></formula>m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-<formula><tex>$\mu$</tex></formula>m SiGe driver circuit wire-bonded to a novel dual 1.3<formula><tex>$\mu$</tex></formula>m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.

    Original languageEnglish
    Pages (from-to)1527-1536
    Number of pages10
    JournalJournal of Lightwave Technology
    Volume36
    Issue number9
    DOIs
    Publication statusPublished - 1 May 2018
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    transmitters
    cavities
    taps
    surface emitting lasers
    modulation
    wavelengths
    indium phosphides
    fibers
    regulators
    C band
    tunnel junctions
    pulse duration
    assembly
    wire
    bandwidth
    life (durability)
    photons
    electric potential

    Keywords

    • Access networks
    • Bandwidth
    • BiCMOS integrated circuits
    • Driver circuits
    • Modulation
    • Optical fiber
    • Optical intensity modulation
    • Optical interconnections
    • Optical transmitters
    • Temperature measurement
    • Vertical cavity surface emitting lasers

    Cite this

    Malacarne, Antonio ; Neumeyr, Christian ; Soenen, Wouter ; Falconi, Fabio ; Porzi, Claudio ; Aalto, Timo ; Rosskopf, J. ; Bauwelinck, Johan ; Bogoni, Antonella. / Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond. In: Journal of Lightwave Technology. 2018 ; Vol. 36, No. 9. pp. 1527-1536.
    @article{e856d20b13e64a0a91137f2fece2ef23,
    title = "Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond",
    abstract = "Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3$\mu$m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-$\mu$m SiGe driver circuit wire-bonded to a novel dual 1.3$\mu$m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.",
    keywords = "Access networks, Bandwidth, BiCMOS integrated circuits, Driver circuits, Modulation, Optical fiber, Optical intensity modulation, Optical interconnections, Optical transmitters, Temperature measurement, Vertical cavity surface emitting lasers",
    author = "Antonio Malacarne and Christian Neumeyr and Wouter Soenen and Fabio Falconi and Claudio Porzi and Timo Aalto and J. Rosskopf and Johan Bauwelinck and Antonella Bogoni",
    year = "2018",
    month = "5",
    day = "1",
    doi = "10.1109/JLT.2017.2782882",
    language = "English",
    volume = "36",
    pages = "1527--1536",
    journal = "Journal of Lightwave Technology",
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    Malacarne, A, Neumeyr, C, Soenen, W, Falconi, F, Porzi, C, Aalto, T, Rosskopf, J, Bauwelinck, J & Bogoni, A 2018, 'Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond', Journal of Lightwave Technology, vol. 36, no. 9, pp. 1527-1536. https://doi.org/10.1109/JLT.2017.2782882

    Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond. / Malacarne, Antonio; Neumeyr, Christian; Soenen, Wouter; Falconi, Fabio; Porzi, Claudio; Aalto, Timo; Rosskopf, J.; Bauwelinck, Johan; Bogoni, Antonella.

    In: Journal of Lightwave Technology, Vol. 36, No. 9, 01.05.2018, p. 1527-1536.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Optical Transmitter Based on a 1.3-μm VCSEL and a SiGe Driver Circuit for Short-Reach Applications and beyond

    AU - Malacarne, Antonio

    AU - Neumeyr, Christian

    AU - Soenen, Wouter

    AU - Falconi, Fabio

    AU - Porzi, Claudio

    AU - Aalto, Timo

    AU - Rosskopf, J.

    AU - Bauwelinck, Johan

    AU - Bogoni, Antonella

    PY - 2018/5/1

    Y1 - 2018/5/1

    N2 - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3$\mu$m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-$\mu$m SiGe driver circuit wire-bonded to a novel dual 1.3$\mu$m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.

    AB - Long-wavelength vertical-cavity surface-emitting lasers (LW-VCSELs) with emission wavelength in the 1.3$\mu$m region for intensity modulation/direct detection (IM/DD) optical transmissions, enable longer fiber reach compared to C-band VCSELs, thanks to the extremely low chromatic dispersion impact at that wavelength. A lot of effort has been recently dedicated to novel cavity designs in order to enhance LW-VCSELs modulation bandwidth to allow higher data rates. Another approach to further improve VCSEL-based intensity modulation speed consists of making use of dedicated driver circuits implementing feed forward equalization (FFE). In this manuscript we present a transmitter assembly incorporating a 4-channel 0.13-$\mu$m SiGe driver circuit wire-bonded to a novel dual 1.3$\mu$m-VCSEL array. The short-cavity Indium Phosphide (InP) Buried Tunnel Junction (BTJ) VCSEL design minimizes both the photon lifetime and the device parasitic currents. The integrated driver circuit requires 2.5 V supply voltage only due to the implementation of a pseudo-balanced regulator, it includes a 2-tap asymmetric FFE where magnitude, sign, relative delay and pulse width distortion (PWD) of the taps can be modified. Through the proposed transmitter, standard single-mode fiber reach of 20 km and 4.5 km respectively for 28 Gb/s and 40 Gb/s data rate has been demonstrated with state-of-the-art power consumption. Transmitter performance has been analyzed through pseudorandom bit sequences of both 27-1 and 231-1 length and the additional benefit due to the use of the driver circuit has been discussed in detail. A final comparison with state-of-the-art VCSEL drivers is also included.

    KW - Access networks

    KW - Bandwidth

    KW - BiCMOS integrated circuits

    KW - Driver circuits

    KW - Modulation

    KW - Optical fiber

    KW - Optical intensity modulation

    KW - Optical interconnections

    KW - Optical transmitters

    KW - Temperature measurement

    KW - Vertical cavity surface emitting lasers

    U2 - 10.1109/JLT.2017.2782882

    DO - 10.1109/JLT.2017.2782882

    M3 - Article

    AN - SCOPUS:85038863836

    VL - 36

    SP - 1527

    EP - 1536

    JO - Journal of Lightwave Technology

    JF - Journal of Lightwave Technology

    SN - 0733-8724

    IS - 9

    ER -