Optimization of terahertz detectors based on graphene field effect transistors by high impedance antennae

This contribution presents the results of investigations performed on monolayer graphene field effect transis-tor-based (GFET-based) terahertz detectors. We have implemented three different types of planar antennae: a bow-tie, a bow-tie with transmission lines and a slot-disc, allowing us to realize different conditions for high-frequency impedance matching. We present a semi-empirical model which uses physical parameters derived from electrical characterization results of devices and electrodynamic characteristics of antennae, allowing us to predict THz re-sponsivity. Model predictions have been compared with the responsivity measurements performed at room temperature in a frequency range from 50 to 1250 GHz. Good agreement between the model predictions and experimental results implies the eligibility of a distributed resistive mixing approximation for GFET. In addition, the device stabil-ity, the temperature dependence and the origin of noise in the transistor channel have been investigated. Finally, to the best of our knowledge, we demonstrate the record performance values for room temperature graphene-based terahertz detectors: 80V/W optical responsivity without the normalization to the antenna effective area and a noise equivalent power of 111 pW/√^—Hz at 336 GHz.