Ordered nanostructures written directly by laser interference

C. Tan; C.S. Peng; J. Pakarinen; M. Pessa; V. N. Petryakov; Yu K. Verevkin; J. Zhang; Z. Wang; S. M. Olaizola; T. Berthou; S. Tisserand

doi:10.1088/0957-4484/20/12/125303

Ordered nanostructures written directly by laser interference

C. Tan^*
, C.S. Peng
, J. Pakarinen
, M. Pessa
, V. N. Petryakov
, Yu K. Verevkin
, J. Zhang
, Z. Wang
, S. M. Olaizola
, T. Berthou
, S. Tisserand

^*Corresponding author for this work

Not published at VTT

Tampere University
Russian Academy of Sciences: Institute of Applied Physics
Cardiff University
University of Navarra
SILIOS Technologies SA

Research output: Contribution to journal › Article › Scientific › peer-review

31 Citations (Scopus)

Abstract

We present a simplified method to employ laser interference lithography for the fabrication of ordered nanostructures. Neither resist, nor an elaborate fabrication process was needed. Four-beam interference patterns generated in this work included periodic arrays of holes in GaAs, covered with SiO 2 bubbles, and they were directly written into the sample. The diameters of the smallest holes were less than 30nm. We propose a model to interpret the results.

Original language	English
Article number	125303
Journal	Nanotechnology
Volume	20
Issue number	12
DOIs	https://doi.org/10.1088/0957-4484/20/12/125303
Publication status	Published - 2009
MoE publication type	A1 Journal article-refereed

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

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10.1088/0957-4484/20/12/125303

Cite this

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abstract = "We present a simplified method to employ laser interference lithography for the fabrication of ordered nanostructures. Neither resist, nor an elaborate fabrication process was needed. Four-beam interference patterns generated in this work included periodic arrays of holes in GaAs, covered with SiO 2 bubbles, and they were directly written into the sample. The diameters of the smallest holes were less than 30nm. We propose a model to interpret the results.",

author = "C. Tan and C.S. Peng and J. Pakarinen and M. Pessa and Petryakov, \{V. N.\} and Verevkin, \{Yu K.\} and J. Zhang and Z. Wang and Olaizola, \{S. M.\} and T. Berthou and S. Tisserand",

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T1 - Ordered nanostructures written directly by laser interference

AU - Tan, C.

AU - Peng, C.S.

AU - Pakarinen, J.

AU - Pessa, M.

AU - Petryakov, V. N.

AU - Verevkin, Yu K.

AU - Zhang, J.

AU - Wang, Z.

AU - Olaizola, S. M.

AU - Berthou, T.

AU - Tisserand, S.

PY - 2009

Y1 - 2009

N2 - We present a simplified method to employ laser interference lithography for the fabrication of ordered nanostructures. Neither resist, nor an elaborate fabrication process was needed. Four-beam interference patterns generated in this work included periodic arrays of holes in GaAs, covered with SiO 2 bubbles, and they were directly written into the sample. The diameters of the smallest holes were less than 30nm. We propose a model to interpret the results.

AB - We present a simplified method to employ laser interference lithography for the fabrication of ordered nanostructures. Neither resist, nor an elaborate fabrication process was needed. Four-beam interference patterns generated in this work included periodic arrays of holes in GaAs, covered with SiO 2 bubbles, and they were directly written into the sample. The diameters of the smallest holes were less than 30nm. We propose a model to interpret the results.

UR - https://www.scopus.com/pages/publications/65149100308

U2 - 10.1088/0957-4484/20/12/125303

DO - 10.1088/0957-4484/20/12/125303

M3 - Article

AN - SCOPUS:65149100308

SN - 0957-4484

VL - 20

JO - Nanotechnology

JF - Nanotechnology

IS - 12

M1 - 125303

ER -

Ordered nanostructures written directly by laser interference

Abstract

UN SDGs

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