INIS
thickness
100%
morphology
100%
esters
100%
butyric acid
100%
concentration dependence
100%
polystyrene
62%
voltage
50%
current density
50%
aluminum
37%
devices
25%
molecules
25%
tunneling
25%
range
25%
films
25%
electrodes
25%
impedance
25%
solutions
12%
nanoparticles
12%
images
12%
energy
12%
weight
12%
metals
12%
increasing
12%
transmission electron microscopy
12%
matrices
12%
inclusions
12%
cross sections
12%
evaporation
12%
x-ray spectroscopy
12%
fullerenes
12%
memory devices
12%
Keyphrases
[6,6]-phenyl-C61-butyric Acid Methyl Ester
100%
Concentration Dependence
100%
Thickness Dependence
100%
Morphology Control
100%
Organic Memory
100%
Current Density
37%
Negative Differential Resistance
37%
Polystyrene Films
25%
Polystyrene
25%
Vmax
25%
Threshold Voltage
25%
Aluminum Electrode
25%
Vmin
25%
Tunneling
12%
Energy Dispersive X-ray Spectroscopy
12%
Spectroscopic Analysis
12%
Metal Nanoparticles
12%
Between-person
12%
Temperature-independent
12%
Weight Percentage
12%
Memory Device
12%
Transmission Electron Microscopy Images
12%
Low Impedance
12%
Controlled Morphology
12%
Tunneling Mechanism
12%
Maximum Current Density
12%
Thermal Evaporation
12%
Minimum Current
12%
Aluminum Metal
12%
Fullerene Derivatives
12%
High Impedance State
12%
Polystyrene Matrix
12%
Low Weight
12%
Material Science
Polystyrene
100%
Density
80%
Aluminum
60%
Film
40%
Fullerene
20%
Transmission Electron Microscopy
20%
Metal Nanoparticle
20%
Engineering
Negative Differential Resistance
100%
Tunnel Construction
66%
Density Ratio
33%
Aluminum Metal
33%
Fullerene
33%
Cross Section
33%
Metal Nanoparticle
33%
Earth and Planetary Sciences
Polystyrene
100%
Current Density
80%
Threshold Voltage
40%
Transmission Electron Microscopy
20%
Thermal Evaporation
20%
Neuroscience
Methyl Ester
100%
Butyric Acid
100%
Spectroscopy
12%
Transmission Electron Microscopy
12%