Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions

N. Majewska, M. Gazda, R. Jendrzejewski, S. Majumdar, M. Sawczak, G. Sliwinski

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

Abstract

Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.
Original languageEnglish
Title of host publicationThird International Conference on Applications of Optics and Photonics
EditorsManuel F. M. Costa
PublisherInternational Society for Optics and Photonics SPIE
Volume10453
ISBN (Electronic)978-1-5106-1383-6
DOIs
Publication statusPublished - 2017
MoE publication typeA4 Article in a conference publication

Publication series

SeriesProceedings of SPIE
Volume10453

Fingerprint

organic semiconductors
pulsed lasers
evaporation
glass
spectroscopic analysis
peroxides
xylene
thin films
carrier mobility
ITO (semiconductors)
ablation
lasers
toluene
charge carriers
desorption
atomic force microscopy
ionization
preparation
fabrication
scanning electron microscopy

Keywords

  • Pulsed laser evaporation.
  • Rubrene organic semiconductor
  • Spintronics
  • Thin films

Cite this

Majewska, N., Gazda, M., Jendrzejewski, R., Majumdar, S., Sawczak, M., & Sliwinski, G. (2017). Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions. In M. F. M. Costa (Ed.), Third International Conference on Applications of Optics and Photonics (Vol. 10453). [104532H] International Society for Optics and Photonics SPIE. Proceedings of SPIE, Vol.. 10453 https://doi.org/10.1117/12.2276250
Majewska, N. ; Gazda, M. ; Jendrzejewski, R. ; Majumdar, S. ; Sawczak, M. ; Sliwinski, G. / Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Third International Conference on Applications of Optics and Photonics. editor / Manuel F. M. Costa. Vol. 10453 International Society for Optics and Photonics SPIE, 2017. (Proceedings of SPIE, Vol. 10453).
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title = "Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions",
abstract = "Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1{\%} wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.",
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Majewska, N, Gazda, M, Jendrzejewski, R, Majumdar, S, Sawczak, M & Sliwinski, G 2017, Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions. in MFM Costa (ed.), Third International Conference on Applications of Optics and Photonics. vol. 10453, 104532H, International Society for Optics and Photonics SPIE, Proceedings of SPIE, vol. 10453. https://doi.org/10.1117/12.2276250

Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions. / Majewska, N.; Gazda, M.; Jendrzejewski, R.; Majumdar, S.; Sawczak, M.; Sliwinski, G.

Third International Conference on Applications of Optics and Photonics. ed. / Manuel F. M. Costa. Vol. 10453 International Society for Optics and Photonics SPIE, 2017. 104532H (Proceedings of SPIE, Vol. 10453).

Research output: Chapter in Book/Report/Conference proceedingConference article in proceedingsScientificpeer-review

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N2 - Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

AB - Organic semiconductor rubrene (C42H28) belongs to most preferred spintronic materials because of the high charge carrier mobility up to 40 cm2(V·s)-1. However, the fabrication of a defect-free, polycrystalline rubrene for spintronic applications represents a difficult task. We report preparation and properties of rubrene thin films deposited by pulsed laser evaporation of solidified solutions. Samples of rubrene dissolved in aromatic solvents toluene, xylene, dichloromethane and 1,1-dichloroethane (0.23-1% wt) were cooled to temperatures in the range of 16.5-163 K and served as targets. The target ablation was provided by a pulsed 1064 nm or 266 nm laser. For films of thickness up to 100 nm deposited on Si, glass and ITO glass substrates, the Raman and AFM data show presence of the mixed crystalline and amorphous rubrene phases. Agglomerates of rubrene crystals are revealed by SEM observation too, and presence of oxide/peroxide (C42H28O2) in the films is concluded from matrix-assisted laser desorption/ionization time-of-flight spectroscopic analysis.

KW - Pulsed laser evaporation.

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T3 - Proceedings of SPIE

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PB - International Society for Optics and Photonics SPIE

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Majewska N, Gazda M, Jendrzejewski R, Majumdar S, Sawczak M, Sliwinski G. Organic semiconductor rubrene thin films deposited by pulsed laser evaporation of solidified solutions. In Costa MFM, editor, Third International Conference on Applications of Optics and Photonics. Vol. 10453. International Society for Optics and Photonics SPIE. 2017. 104532H. (Proceedings of SPIE, Vol. 10453). https://doi.org/10.1117/12.2276250