Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

Research output: Contribution to conferenceConference PosterScientific

Abstract

Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.
Original languageEnglish
Publication statusPublished - 2009
MoE publication typeNot Eligible
EventPhysics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland
Duration: 12 Mar 200914 Mar 2009
Conference number: 43

Conference

ConferencePhysics Days - Fysiikan päivät 2009
CountryFinland
CityEspoo
Period12/03/0914/03/09

Keywords

  • Organic transistor
  • organic thin film transistor
  • organic TFT
  • low voltage OFET

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