Abstract
Anodization of aluminium is very well known method to produce thick
protective layers of aluminium oxide on aluminium metal. Characteristics of
produced aluminium oxide layer depend strongly of anodization parameters
(acid, acid concentration, anodizing current, and temperature) [1-3]. We have
produced thin (5-50 nm), insulating layers, with different acids and acid
concentrations. We have also used ALD and plasma oxidation methods to produce
aluminium oxide layers with similar thicknesses. Quality of the insulating
layers produced by different methods is compared, as well as the operation as
gate dielectric in finished TFT.
| Original language | English |
|---|---|
| Publication status | Published - 2009 |
| MoE publication type | Not Eligible |
| Event | Physics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland Duration: 12 Mar 2009 → 14 Mar 2009 Conference number: 43 |
Conference
| Conference | Physics Days - Fysiikan päivät 2009 |
|---|---|
| Country | Finland |
| City | Espoo |
| Period | 12/03/09 → 14/03/09 |
Keywords
- Organic transistor
- organic thin film transistor
- organic TFT
- low voltage OFET
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Hassinen, T., Björklund, N., & Sandberg, H. G. O. (2009). Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland. http://ltl.tkk.fi/~ttheikki/physday09abs/1205.pdf