Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

    Research output: Contribution to conferenceConference PosterScientific

    Abstract

    Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.
    Original languageEnglish
    Publication statusPublished - 2009
    MoE publication typeNot Eligible
    EventPhysics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland
    Duration: 12 Mar 200914 Mar 2009
    Conference number: 43

    Conference

    ConferencePhysics Days - Fysiikan päivät 2009
    CountryFinland
    CityEspoo
    Period12/03/0914/03/09

    Keywords

    • Organic transistor
    • organic thin film transistor
    • organic TFT
    • low voltage OFET

    Fingerprint Dive into the research topics of 'Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods'. Together they form a unique fingerprint.

    Cite this