Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

Tomi Hassinen; N. Björklund; Henrik G. O. Sandberg

Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

Tomi Hassinen, N. Björklund, Henrik G. O. Sandberg

Åbo Akademi University

Research output: Contribution to conference › Conference Poster › Scientific

Abstract

Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.

Original language	English
Publication status	Published - 2009
MoE publication type	Not Eligible
Event	Physics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland Duration: 12 Mar 2009 → 14 Mar 2009 Conference number: 43

Conference

Conference	Physics Days - Fysiikan päivät 2009
Country/Territory	Finland
City	Espoo
Period	12/03/09 → 14/03/09

Keywords

Organic transistor
organic thin film transistor
organic TFT
low voltage OFET

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http://ltl.tkk.fi/~ttheikki/physday09abs/1205.pdf

Cite this

@conference{2c3c3424556245f5a126b0ea7d3a3b3f,

title = "Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods",

abstract = "Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.",

keywords = "Organic transistor, organic thin film transistor, organic TFT, low voltage OFET",

author = "Tomi Hassinen and N. Bj{\"o}rklund and Sandberg, {Henrik G. O.}",

note = "Poster; Physics Days - Fysiikan p{\"a}iv{\"a}t 2009 : {"}Physics Crossing Borders{"}. 43rd annual meeting of the Finnish Physical Society ; Conference date: 12-03-2009 Through 14-03-2009",

year = "2009",

language = "English",

}

TY - CONF

T1 - Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

AU - Hassinen, Tomi

AU - Björklund, N.

AU - Sandberg, Henrik G. O.

N1 - Conference code: 43

PY - 2009

Y1 - 2009

N2 - Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.

AB - Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.

KW - Organic transistor

KW - organic thin film transistor

KW - organic TFT

KW - low voltage OFET

M3 - Conference Poster

T2 - Physics Days - Fysiikan päivät 2009

Y2 - 12 March 2009 through 14 March 2009

ER -

Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

Abstract

Conference

Keywords

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