Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

Research output: Contribution to conferenceConference PosterScientific

Abstract

Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.
Original languageEnglish
Publication statusPublished - 2009
MoE publication typeNot Eligible
EventPhysics Days - Fysiikan päivät 2009: "Physics Crossing Borders". 43rd annual meeting of the Finnish Physical Society - Espoo, Finland
Duration: 12 Mar 200914 Mar 2009
Conference number: 43

Conference

ConferencePhysics Days - Fysiikan päivät 2009
CountryFinland
CityEspoo
Period12/03/0914/03/09

Fingerprint

transistors
aluminum oxides
thin films
acids
aluminum
anodizing
oxidation
metals
temperature

Keywords

  • Organic transistor
  • organic thin film transistor
  • organic TFT
  • low voltage OFET

Cite this

Hassinen, T., Björklund, N., & Sandberg, H. G. O. (2009). Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.
Hassinen, Tomi ; Björklund, N. ; Sandberg, Henrik G. O. / Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.
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title = "Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods",
abstract = "Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.",
keywords = "Organic transistor, organic thin film transistor, organic TFT, low voltage OFET",
author = "Tomi Hassinen and N. Bj{\"o}rklund and Sandberg, {Henrik G. O.}",
note = "Poster; Physics Days - Fysiikan p{\"a}iv{\"a}t 2009 : {"}Physics Crossing Borders{"}. 43rd annual meeting of the Finnish Physical Society ; Conference date: 12-03-2009 Through 14-03-2009",
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Hassinen, T, Björklund, N & Sandberg, HGO 2009, 'Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods' Physics Days - Fysiikan päivät 2009, Espoo, Finland, 12/03/09 - 14/03/09, .

Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods. / Hassinen, Tomi; Björklund, N.; Sandberg, Henrik G. O.

2009. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.

Research output: Contribution to conferenceConference PosterScientific

TY - CONF

T1 - Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods

AU - Hassinen, Tomi

AU - Björklund, N.

AU - Sandberg, Henrik G. O.

N1 - Poster

PY - 2009

Y1 - 2009

N2 - Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.

AB - Anodization of aluminium is very well known method to produce thick protective layers of aluminium oxide on aluminium metal. Characteristics of produced aluminium oxide layer depend strongly of anodization parameters (acid, acid concentration, anodizing current, and temperature) [1-3]. We have produced thin (5-50 nm), insulating layers, with different acids and acid concentrations. We have also used ALD and plasma oxidation methods to produce aluminium oxide layers with similar thicknesses. Quality of the insulating layers produced by different methods is compared, as well as the operation as gate dielectric in finished TFT.

KW - Organic transistor

KW - organic thin film transistor

KW - organic TFT

KW - low voltage OFET

M3 - Conference Poster

ER -

Hassinen T, Björklund N, Sandberg HGO. Organic thin film transistor gate dielectrics by utilization of different aluminium oxide growth methods. 2009. Poster session presented at Physics Days - Fysiikan päivät 2009, Espoo, Finland.