Oxidation of aluminum in ozonated water

Heini Ritala, Kimmo Solehmainen, Leif Grönberg

Research output: Contribution to journalArticleScientificpeer-review

1 Citation (Scopus)

Abstract

The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.
Original languageEnglish
Pages (from-to)233 - 235
Number of pages3
JournalPhysica Scripta
VolumeT114
DOIs
Publication statusPublished - 2004
MoE publication typeA1 Journal article-refereed
Event20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland
Duration: 25 Aug 200327 Aug 2003

Fingerprint

Oxidation
Aluminum
aluminum
Water
oxidation
Oxides
Thin Films
water
Integrated Circuits
thin films
metal films
Resist
Copper
seats
integrated circuits
oxide films
Silicon
Metals
optics
copper

Cite this

Ritala, Heini ; Solehmainen, Kimmo ; Grönberg, Leif. / Oxidation of aluminum in ozonated water. In: Physica Scripta. 2004 ; Vol. T114. pp. 233 - 235.
@article{76d76635934646989048ff88ff5fa9ce,
title = "Oxidation of aluminum in ozonated water",
abstract = "The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.",
author = "Heini Ritala and Kimmo Solehmainen and Leif Gr{\"o}nberg",
note = "Project code: T2SU00127",
year = "2004",
doi = "10.1088/0031-8949/2004/T114/059",
language = "English",
volume = "T114",
pages = "233 -- 235",
journal = "Physica Scripta",
issn = "0031-8949",
publisher = "Institute of Physics IOP",

}

Oxidation of aluminum in ozonated water. / Ritala, Heini; Solehmainen, Kimmo; Grönberg, Leif.

In: Physica Scripta, Vol. T114, 2004, p. 233 - 235.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Oxidation of aluminum in ozonated water

AU - Ritala, Heini

AU - Solehmainen, Kimmo

AU - Grönberg, Leif

N1 - Project code: T2SU00127

PY - 2004

Y1 - 2004

N2 - The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.

AB - The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.

U2 - 10.1088/0031-8949/2004/T114/059

DO - 10.1088/0031-8949/2004/T114/059

M3 - Article

VL - T114

SP - 233

EP - 235

JO - Physica Scripta

JF - Physica Scripta

SN - 0031-8949

ER -