The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.
|Pages (from-to)||233 - 235|
|Number of pages||3|
|Publication status||Published - 2004|
|MoE publication type||A1 Journal article-refereed|
|Event||20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland|
Duration: 25 Aug 2003 → 27 Aug 2003