Oxidation of aluminum in ozonated water

Heini Ritala; Kimmo Solehmainen; Leif Grönberg

doi:10.1088/0031-8949/2004/T114/059

Oxidation of aluminum in ozonated water

Heini Ritala
, Kimmo Solehmainen
, Leif Grönberg

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Abstract

The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.

Original language	English
Pages (from-to)	233 - 235
Number of pages	3
Journal	Physica Scripta Topical Issues
Volume	T114
DOIs	https://doi.org/10.1088/0031-8949/2004/T114/059
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed
Event	20th Nordic Semiconductor Meeting, NSM20 - Tampere, Finland Duration: 25 Aug 2003 → 27 Aug 2003

Access to Document

10.1088/0031-8949/2004/T114/059

Cite this

@article{76d76635934646989048ff88ff5fa9ce,

title = "Oxidation of aluminum in ozonated water",

abstract = "The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.",

author = "Heini Ritala and Kimmo Solehmainen and Leif Gr{\"o}nberg",

note = "Project code: T2SU00127; 20th Nordic Semiconductor Meeting, NSM20 ; Conference date: 25-08-2003 Through 27-08-2003",

year = "2004",

doi = "10.1088/0031-8949/2004/T114/059",

language = "English",

volume = "T114",

pages = "233 -- 235",

journal = "Physica Scripta Topical Issues",

issn = "0281-1847",

}

TY - JOUR

T1 - Oxidation of aluminum in ozonated water

AU - Ritala, Heini

AU - Solehmainen, Kimmo

AU - Grönberg, Leif

N1 - Project code: T2SU00127

PY - 2004

Y1 - 2004

N2 - The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.

AB - The oxidation of silicon and copper alloyed aluminum thin films in ozonated water was studied. Experiments were performed in a wet bench at different temperatures. The oxidation was studied mainly by optical methods and sheet resistance measurements. The films oxidized only slightly at 5 and 15°C. At 25 and 35°C an oxide film formed faster. The thickness of the oxide as well as the sheet resistance of metal films increased in the course of time. Since ozonated water processing cause only slight oxidation of aluminum thin films it is suggested that this resist removal process can be utilized in integrated circuit processing.

U2 - 10.1088/0031-8949/2004/T114/059

DO - 10.1088/0031-8949/2004/T114/059

M3 - Article

SN - 0281-1847

VL - T114

SP - 233

EP - 235

JO - Physica Scripta Topical Issues

JF - Physica Scripta Topical Issues

T2 - 20th Nordic Semiconductor Meeting, NSM20

Y2 - 25 August 2003 through 27 August 2003

ER -

Oxidation of aluminum in ozonated water

Abstract

Access to Document

Fingerprint

Cite this