Oxidation of MoSi2/SiC nanolayered composite

J. Hirvonen, Pauli Torri, Reijo Lappalainen, Jari Likonen, Harriet Kung, J. Jarvis, Michael Nastasi

    Research output: Contribution to journalArticleScientificpeer-review

    10 Citations (Scopus)

    Abstract

    The oxidation behavior of a nanolayered MoSi2/SiC composite material was determined at the temperature range of 400–900 °C in wet oxidation conditions. The samples were produced in the form of thin films using a sputtering technique from two different sources, and a rotating substrate holder, onto silicon single crystals and low carbon steel.
    For comparison, the oxidations of both constituents, MoSi2 and SiC, produced with the same sputtering technique, were measured separately. The microstructure of the MoSi2/SiC samples was determined with high resolution transmission electron microscopy (HRTEM), and the composition of the sputtered samples was measured using backscattering (BS) of protons.
    For quantitative determination of oxidation, the nuclear reaction 16O(d, p)17O was utilized. Oxide layers were also analyzed using a secondary ion mass spectrometry (SIMS) and the appearance of the oxidized surface with a scanning electron microscopy (SEM). As expected, the SiC films had both the lowest initial oxidation and steady state oxidation rate.
    The results show that the oxidation behavior of the MoSi2/SiC nanolayered composite material differs from that of both its constituents and involves a degradation mechanism of its own, resulting in the highest oxidation during the initial phase of the oxidation.
    A steady-state oxidation rate was observed after the initial transient phase to be the highest for the metastable C40 structure of the single MoSi2 layer. The oxidation rate of the nanolayered structure was retarded by the SiC layers. No signs of pest disintegration were observed on either of the MoSi2 containing coatings during the steady-state phase of the oxidation at 500 °C up to 40 h. Our results show that the oxidation of nanolayered structures can be only in part explained by the oxidation behavior of the constituents and that during the steady-state oxidation of the nanolayered structure the oxidation rate is largely determined by the constituent with the lowest oxidation rate and by the layered structure.
    Original languageEnglish
    Pages (from-to)965-973
    JournalJournal of Materials Research
    Volume13
    Issue number4
    DOIs
    Publication statusPublished - 1998
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Oxidation
    oxidation
    composite materials
    Composite materials
    Sputtering
    sputtering
    low carbon steels
    Nuclear reactions
    Disintegration
    Low carbon steel
    disintegration
    Silicon
    Backscattering
    holders
    Secondary ion mass spectrometry
    High resolution transmission electron microscopy
    nuclear reactions
    Oxides
    secondary ion mass spectrometry
    Protons

    Cite this

    Hirvonen, J., Torri, P., Lappalainen, R., Likonen, J., Kung, H., Jarvis, J., & Nastasi, M. (1998). Oxidation of MoSi2/SiC nanolayered composite. Journal of Materials Research, 13(4), 965-973. https://doi.org/10.1557/JMR.1998.0135
    Hirvonen, J. ; Torri, Pauli ; Lappalainen, Reijo ; Likonen, Jari ; Kung, Harriet ; Jarvis, J. ; Nastasi, Michael. / Oxidation of MoSi2/SiC nanolayered composite. In: Journal of Materials Research. 1998 ; Vol. 13, No. 4. pp. 965-973.
    @article{554d18e506604de1b591a978fb17f023,
    title = "Oxidation of MoSi2/SiC nanolayered composite",
    abstract = "The oxidation behavior of a nanolayered MoSi2/SiC composite material was determined at the temperature range of 400–900 °C in wet oxidation conditions. The samples were produced in the form of thin films using a sputtering technique from two different sources, and a rotating substrate holder, onto silicon single crystals and low carbon steel. For comparison, the oxidations of both constituents, MoSi2 and SiC, produced with the same sputtering technique, were measured separately. The microstructure of the MoSi2/SiC samples was determined with high resolution transmission electron microscopy (HRTEM), and the composition of the sputtered samples was measured using backscattering (BS) of protons. For quantitative determination of oxidation, the nuclear reaction 16O(d, p)17O was utilized. Oxide layers were also analyzed using a secondary ion mass spectrometry (SIMS) and the appearance of the oxidized surface with a scanning electron microscopy (SEM). As expected, the SiC films had both the lowest initial oxidation and steady state oxidation rate. The results show that the oxidation behavior of the MoSi2/SiC nanolayered composite material differs from that of both its constituents and involves a degradation mechanism of its own, resulting in the highest oxidation during the initial phase of the oxidation.A steady-state oxidation rate was observed after the initial transient phase to be the highest for the metastable C40 structure of the single MoSi2 layer. The oxidation rate of the nanolayered structure was retarded by the SiC layers. No signs of pest disintegration were observed on either of the MoSi2 containing coatings during the steady-state phase of the oxidation at 500 °C up to 40 h. Our results show that the oxidation of nanolayered structures can be only in part explained by the oxidation behavior of the constituents and that during the steady-state oxidation of the nanolayered structure the oxidation rate is largely determined by the constituent with the lowest oxidation rate and by the layered structure.",
    author = "J. Hirvonen and Pauli Torri and Reijo Lappalainen and Jari Likonen and Harriet Kung and J. Jarvis and Michael Nastasi",
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    Hirvonen, J, Torri, P, Lappalainen, R, Likonen, J, Kung, H, Jarvis, J & Nastasi, M 1998, 'Oxidation of MoSi2/SiC nanolayered composite', Journal of Materials Research, vol. 13, no. 4, pp. 965-973. https://doi.org/10.1557/JMR.1998.0135

    Oxidation of MoSi2/SiC nanolayered composite. / Hirvonen, J.; Torri, Pauli; Lappalainen, Reijo; Likonen, Jari; Kung, Harriet; Jarvis, J.; Nastasi, Michael.

    In: Journal of Materials Research, Vol. 13, No. 4, 1998, p. 965-973.

    Research output: Contribution to journalArticleScientificpeer-review

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    T1 - Oxidation of MoSi2/SiC nanolayered composite

    AU - Hirvonen, J.

    AU - Torri, Pauli

    AU - Lappalainen, Reijo

    AU - Likonen, Jari

    AU - Kung, Harriet

    AU - Jarvis, J.

    AU - Nastasi, Michael

    PY - 1998

    Y1 - 1998

    N2 - The oxidation behavior of a nanolayered MoSi2/SiC composite material was determined at the temperature range of 400–900 °C in wet oxidation conditions. The samples were produced in the form of thin films using a sputtering technique from two different sources, and a rotating substrate holder, onto silicon single crystals and low carbon steel. For comparison, the oxidations of both constituents, MoSi2 and SiC, produced with the same sputtering technique, were measured separately. The microstructure of the MoSi2/SiC samples was determined with high resolution transmission electron microscopy (HRTEM), and the composition of the sputtered samples was measured using backscattering (BS) of protons. For quantitative determination of oxidation, the nuclear reaction 16O(d, p)17O was utilized. Oxide layers were also analyzed using a secondary ion mass spectrometry (SIMS) and the appearance of the oxidized surface with a scanning electron microscopy (SEM). As expected, the SiC films had both the lowest initial oxidation and steady state oxidation rate. The results show that the oxidation behavior of the MoSi2/SiC nanolayered composite material differs from that of both its constituents and involves a degradation mechanism of its own, resulting in the highest oxidation during the initial phase of the oxidation.A steady-state oxidation rate was observed after the initial transient phase to be the highest for the metastable C40 structure of the single MoSi2 layer. The oxidation rate of the nanolayered structure was retarded by the SiC layers. No signs of pest disintegration were observed on either of the MoSi2 containing coatings during the steady-state phase of the oxidation at 500 °C up to 40 h. Our results show that the oxidation of nanolayered structures can be only in part explained by the oxidation behavior of the constituents and that during the steady-state oxidation of the nanolayered structure the oxidation rate is largely determined by the constituent with the lowest oxidation rate and by the layered structure.

    AB - The oxidation behavior of a nanolayered MoSi2/SiC composite material was determined at the temperature range of 400–900 °C in wet oxidation conditions. The samples were produced in the form of thin films using a sputtering technique from two different sources, and a rotating substrate holder, onto silicon single crystals and low carbon steel. For comparison, the oxidations of both constituents, MoSi2 and SiC, produced with the same sputtering technique, were measured separately. The microstructure of the MoSi2/SiC samples was determined with high resolution transmission electron microscopy (HRTEM), and the composition of the sputtered samples was measured using backscattering (BS) of protons. For quantitative determination of oxidation, the nuclear reaction 16O(d, p)17O was utilized. Oxide layers were also analyzed using a secondary ion mass spectrometry (SIMS) and the appearance of the oxidized surface with a scanning electron microscopy (SEM). As expected, the SiC films had both the lowest initial oxidation and steady state oxidation rate. The results show that the oxidation behavior of the MoSi2/SiC nanolayered composite material differs from that of both its constituents and involves a degradation mechanism of its own, resulting in the highest oxidation during the initial phase of the oxidation.A steady-state oxidation rate was observed after the initial transient phase to be the highest for the metastable C40 structure of the single MoSi2 layer. The oxidation rate of the nanolayered structure was retarded by the SiC layers. No signs of pest disintegration were observed on either of the MoSi2 containing coatings during the steady-state phase of the oxidation at 500 °C up to 40 h. Our results show that the oxidation of nanolayered structures can be only in part explained by the oxidation behavior of the constituents and that during the steady-state oxidation of the nanolayered structure the oxidation rate is largely determined by the constituent with the lowest oxidation rate and by the layered structure.

    U2 - 10.1557/JMR.1998.0135

    DO - 10.1557/JMR.1998.0135

    M3 - Article

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    JF - Journal of Materials Research

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    Hirvonen J, Torri P, Lappalainen R, Likonen J, Kung H, Jarvis J et al. Oxidation of MoSi2/SiC nanolayered composite. Journal of Materials Research. 1998;13(4):965-973. https://doi.org/10.1557/JMR.1998.0135