Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

N. Xiang, A. Tukiainen, M. Pessa, J. Dekker, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    2 Citations (Scopus)

    Abstract

    The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.
    Original languageEnglish
    Pages (from-to)549-552
    JournalJournal of Materials Science: Materials in Electronics
    Volume13
    Issue number9
    DOIs
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed

    Fingerprint

    Epitaxial growth
    epitaxy
    Impurities
    Oxygen
    impurities
    oxygen
    Hole concentration
    Deep level transient spectroscopy
    Molecular beam epitaxy
    Photoluminescence
    molecular beam epitaxy
    photoluminescence
    spectroscopy
    Compensation and Redress

    Cite this

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    title = "Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy",
    abstract = "The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.",
    author = "N. Xiang and A. Tukiainen and M. Pessa and J. Dekker and Jari Likonen",
    year = "2002",
    doi = "10.1023/A:1019673614143",
    language = "English",
    volume = "13",
    pages = "549--552",
    journal = "Journal of Materials Science: Materials in Electronics",
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    }

    Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy. / Xiang, N.; Tukiainen, A.; Pessa, M.; Dekker, J.; Likonen, Jari.

    In: Journal of Materials Science: Materials in Electronics, Vol. 13, No. 9, 2002, p. 549-552.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

    AU - Xiang, N.

    AU - Tukiainen, A.

    AU - Pessa, M.

    AU - Dekker, J.

    AU - Likonen, Jari

    PY - 2002

    Y1 - 2002

    N2 - The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

    AB - The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

    U2 - 10.1023/A:1019673614143

    DO - 10.1023/A:1019673614143

    M3 - Article

    VL - 13

    SP - 549

    EP - 552

    JO - Journal of Materials Science: Materials in Electronics

    JF - Journal of Materials Science: Materials in Electronics

    SN - 0957-4522

    IS - 9

    ER -