Abstract
The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.
Original language | English |
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Pages (from-to) | 549-552 |
Journal | Journal of Materials Science: Materials in Electronics |
Volume | 13 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2002 |
MoE publication type | A1 Journal article-refereed |