The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.
|Journal||Journal of Materials Science: Materials in Electronics|
|Publication status||Published - 2002|
|MoE publication type||A1 Journal article-refereed|
Xiang, N., Tukiainen, A., Pessa, M., Dekker, J., & Likonen, J. (2002). Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy. Journal of Materials Science: Materials in Electronics, 13(9), 549-552. https://doi.org/10.1023/A:1019673614143