Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

N. Xiang, A. Tukiainen, M. Pessa, J. Dekker, Jari Likonen

Research output: Contribution to journalArticleScientificpeer-review

2 Citations (Scopus)

Abstract

The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.
Original languageEnglish
Pages (from-to)549-552
JournalJournal of Materials Science: Materials in Electronics
Volume13
Issue number9
DOIs
Publication statusPublished - 2002
MoE publication typeA1 Journal article-refereed

Fingerprint

Epitaxial growth
epitaxy
Impurities
Oxygen
impurities
oxygen
Hole concentration
Deep level transient spectroscopy
Molecular beam epitaxy
Photoluminescence
molecular beam epitaxy
photoluminescence
spectroscopy
Compensation and Redress

Cite this

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title = "Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy",
abstract = "The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.",
author = "N. Xiang and A. Tukiainen and M. Pessa and J. Dekker and Jari Likonen",
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language = "English",
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Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy. / Xiang, N.; Tukiainen, A.; Pessa, M.; Dekker, J.; Likonen, Jari.

In: Journal of Materials Science: Materials in Electronics, Vol. 13, No. 9, 2002, p. 549-552.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

AU - Xiang, N.

AU - Tukiainen, A.

AU - Pessa, M.

AU - Dekker, J.

AU - Likonen, Jari

PY - 2002

Y1 - 2002

N2 - The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

AB - The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

U2 - 10.1023/A:1019673614143

DO - 10.1023/A:1019673614143

M3 - Article

VL - 13

SP - 549

EP - 552

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 9

ER -