Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

N. Xiang, A. Tukiainen, M. Pessa, J. Dekker, Jari Likonen

    Research output: Contribution to journalArticleScientificpeer-review

    6 Citations (Scopus)


    The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.
    Original languageEnglish
    Pages (from-to)549-552
    JournalJournal of Materials Science: Materials in Electronics
    Issue number9
    Publication statusPublished - 2002
    MoE publication typeA1 Journal article-refereed


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