Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.