Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

N. Xiang; A. Tukiainen; M. Pessa; J. Dekker; Jari Likonen

doi:10.1023/A:1019673614143

Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

N. Xiang, A. Tukiainen, M. Pessa, J. Dekker, Jari Likonen

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Abstract

The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

Original language	English
Pages (from-to)	549-552
Journal	Journal of Materials Science: Materials in Electronics
Volume	13
Issue number	9
DOIs	https://doi.org/10.1023/A:1019673614143
Publication status	Published - 2002
MoE publication type	A1 Journal article-refereed

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@article{9e36d0542f5e4de492cf339b76e7729e,

title = "Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy",

abstract = "The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.",

author = "N. Xiang and A. Tukiainen and M. Pessa and J. Dekker and Jari Likonen",

year = "2002",

doi = "10.1023/A:1019673614143",

language = "English",

volume = "13",

pages = "549--552",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer",

number = "9",

}

TY - JOUR

T1 - Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

AU - Xiang, N.

AU - Tukiainen, A.

AU - Pessa, M.

AU - Dekker, J.

AU - Likonen, Jari

PY - 2002

Y1 - 2002

N2 - The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

AB - The effect of oxygen in Be- and Si-doped GaInP grown by all-solid-source molecular beam epitaxy is reported. The oxygen incorporation in Si-doped material is reduced relative to that of Be-doped material, due to the behavior of the volatile Si–O species. Deep level transient spectroscopy shows a number of oxygen-related deep levels exist. These result in reduced photoluminescence intensity in both p- and n-GaInP as the oxygen concentration is increased. Furthermore, Hall data suggest the deep levels may be involved in electrical compensation rather than chemical compensation to reduce the hole concentration.

U2 - 10.1023/A:1019673614143

DO - 10.1023/A:1019673614143

M3 - Article

SN - 0957-4522

VL - 13

SP - 549

EP - 552

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 9

ER -

Oxygen impurities in Ga0.51In0.49P grown by solid-source molecular bean epitaxy

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