Oxygen-related deep level defects in solid-source MBE grown GaInP

N. Xiang (Corresponding Author), A. Tukiainen, J. Dekker, Jari Likonen, Markus Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    22 Citations (Scopus)

    Abstract

    We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.
    Original languageEnglish
    Pages (from-to)244-248
    Number of pages5
    JournalJournal of Crystal Growth
    Volume227-228
    DOIs
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed
    EventEleventh International Conference on Molecular Beam Epitaxy - Beijing, China
    Duration: 11 Sep 200015 Sep 2000

    Fingerprint

    Molecular beam epitaxy
    Deep level transient spectroscopy
    Oxygen
    Defects
    defects
    oxygen
    traps
    Epilayers
    Secondary ion mass spectrometry
    Phosphorus
    spectroscopy
    secondary ion mass spectrometry
    phosphorus
    Photoluminescence
    Activation energy
    Impurities
    activation energy
    photoluminescence
    impurities
    profiles

    Cite this

    Xiang, N. ; Tukiainen, A. ; Dekker, J. ; Likonen, Jari ; Pessa, Markus. / Oxygen-related deep level defects in solid-source MBE grown GaInP. In: Journal of Crystal Growth. 2001 ; Vol. 227-228. pp. 244-248.
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    title = "Oxygen-related deep level defects in solid-source MBE grown GaInP",
    abstract = "We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.",
    author = "N. Xiang and A. Tukiainen and J. Dekker and Jari Likonen and Markus Pessa",
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    doi = "10.1016/S0022-0248(01)00691-1",
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    Oxygen-related deep level defects in solid-source MBE grown GaInP. / Xiang, N. (Corresponding Author); Tukiainen, A.; Dekker, J.; Likonen, Jari; Pessa, Markus.

    In: Journal of Crystal Growth, Vol. 227-228, 2001, p. 244-248.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Oxygen-related deep level defects in solid-source MBE grown GaInP

    AU - Xiang, N.

    AU - Tukiainen, A.

    AU - Dekker, J.

    AU - Likonen, Jari

    AU - Pessa, Markus

    N1 - Project code: K9SU00369

    PY - 2001

    Y1 - 2001

    N2 - We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.

    AB - We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.

    U2 - 10.1016/S0022-0248(01)00691-1

    DO - 10.1016/S0022-0248(01)00691-1

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    SP - 244

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    JO - Journal of Crystal Growth

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