Oxygen-related deep level defects in solid-source MBE grown GaInP

N. Xiang; A. Tukiainen; J. Dekker; Jari Likonen; Markus Pessa

doi:10.1016/S0022-0248(01)00691-1

Oxygen-related deep level defects in solid-source MBE grown GaInP

N. Xiang (Corresponding Author), A. Tukiainen, J. Dekker, Jari Likonen, Markus Pessa

Research output: Contribution to journal › Article › Scientific › peer-review

28 Citations (Scopus)

Abstract

We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.

Original language	English
Pages (from-to)	244-248
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00691-1
Publication status	Published - 2001
MoE publication type	A1 Journal article-refereed
Event	Eleventh International Conference on Molecular Beam Epitaxy - Beijing, China Duration: 11 Sept 2000 → 15 Sept 2000

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@article{841defe9cea043ba95ee467bd08c1324,

title = "Oxygen-related deep level defects in solid-source MBE grown GaInP",

abstract = "We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.",

author = "N. Xiang and A. Tukiainen and J. Dekker and Jari Likonen and Markus Pessa",

note = "Project code: K9SU00369; Eleventh International Conference on Molecular Beam Epitaxy, MBE-11 ; Conference date: 11-09-2000 Through 15-09-2000",

year = "2001",

doi = "10.1016/S0022-0248(01)00691-1",

language = "English",

volume = "227-228",

pages = "244--248",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

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TY - JOUR

T1 - Oxygen-related deep level defects in solid-source MBE grown GaInP

AU - Xiang, N.

AU - Tukiainen, A.

AU - Dekker, J.

AU - Likonen, Jari

AU - Pessa, Markus

N1 - Project code: K9SU00369

PY - 2001

Y1 - 2001

N2 - We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.

AB - We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.

U2 - 10.1016/S0022-0248(01)00691-1

DO - 10.1016/S0022-0248(01)00691-1

M3 - Article

SN - 0022-0248

VL - 227-228

SP - 244

EP - 248

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Eleventh International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Oxygen-related deep level defects in solid-source MBE grown GaInP

Abstract

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