Oxygen-related deep level defects in solid-source MBE grown GaInP

N. Xiang (Corresponding Author), A. Tukiainen, J. Dekker, Jari Likonen, Markus Pessa

    Research output: Contribution to journalArticleScientificpeer-review

    28 Citations (Scopus)


    We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.
    Original languageEnglish
    Pages (from-to)244-248
    JournalJournal of Crystal Growth
    Publication statusPublished - 2001
    MoE publication typeA1 Journal article-refereed
    EventEleventh International Conference on Molecular Beam Epitaxy - Beijing, China
    Duration: 11 Sept 200015 Sept 2000


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