Oxygen-related deep level defects in solid-source MBE grown GaInP

N. Xiang (Corresponding Author), A. Tukiainen, J. Dekker, Jari Likonen, Markus Pessa

Research output: Contribution to journalArticleScientificpeer-review

22 Citations (Scopus)

Abstract

We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.
Original languageEnglish
Pages (from-to)244-248
Number of pages5
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - 2001
MoE publication typeA1 Journal article-refereed
EventEleventh International Conference on Molecular Beam Epitaxy - Beijing, China
Duration: 11 Sep 200015 Sep 2000

Fingerprint

Molecular beam epitaxy
Deep level transient spectroscopy
Oxygen
Defects
defects
oxygen
traps
Epilayers
Secondary ion mass spectrometry
Phosphorus
spectroscopy
secondary ion mass spectrometry
phosphorus
Photoluminescence
Activation energy
Impurities
activation energy
photoluminescence
impurities
profiles

Cite this

Xiang, N. ; Tukiainen, A. ; Dekker, J. ; Likonen, Jari ; Pessa, Markus. / Oxygen-related deep level defects in solid-source MBE grown GaInP. In: Journal of Crystal Growth. 2001 ; Vol. 227-228. pp. 244-248.
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abstract = "We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.",
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Oxygen-related deep level defects in solid-source MBE grown GaInP. / Xiang, N. (Corresponding Author); Tukiainen, A.; Dekker, J.; Likonen, Jari; Pessa, Markus.

In: Journal of Crystal Growth, Vol. 227-228, 2001, p. 244-248.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Oxygen-related deep level defects in solid-source MBE grown GaInP

AU - Xiang, N.

AU - Tukiainen, A.

AU - Dekker, J.

AU - Likonen, Jari

AU - Pessa, Markus

N1 - Project code: K9SU00369

PY - 2001

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AB - We report the first observation of oxygen-related deep level defects in solid-source MBE-grown GaInP. Si-doped GaInP samples were studied by deep level transient spectroscopy (DLTS), secondary-ion mass spectrometry (SIMS), capacitance–voltage (C–V) profiles, and photoluminescence (PL). Different amounts of oxygen impurities were introduced into GaInP epilayers by growing with different phosphorus cracking temperatures. Four traps were resolved by DLTS from the GaInP samples. Among them, two traps, with thermal activation energies of 0.45–0.46 and 0.63–0.82 eV, were found to be oxygen-related.

U2 - 10.1016/S0022-0248(01)00691-1

DO - 10.1016/S0022-0248(01)00691-1

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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