Ozone-based batch atomic layer deposited Al2O3 for effective surface passivation

Guillaume von Gastrow (Corresponding Author), Shuo Li, Päivikki Repo, Yameng Bao, Matti Putkonen, Hele Savin

    Research output: Contribution to journalArticleScientificpeer-review

    20 Citations (Scopus)


    In this paper we compare water and ozone as oxidants in the Al2O3 ALD reaction in terms of surface passivation quality. The experiments show that O3 produces a high negative charge density up to 7·1012 cm-2 even in as-deposited film, which is different from water based Al2O3 that requires a separate annealing step to activate the negative charge. In general, the ozone process produces lower interface defect density (Dit) and higher negative charge density, which contributes to the higher lifetime value than corresponding water process. Most importantly, ozone-based Al2O3 shows much better firing stability than water-based Al2O3. Ozone concentration is also shown to play a role in the surface passivation quality. Finally, we found out that inserting a water pulse after the ozone pulse can lower the Dit further resulting in even higher lifetime.
    Original languageEnglish
    Pages (from-to)890-894
    JournalEnergy Procedia
    Publication statusPublished - 2013
    MoE publication typeA1 Journal article-refereed
    Event3rd International Conference on Crystalline Silicon Photovoltaics, SiliconPV 2013 - Hamelin, Germany
    Duration: 25 Mar 201327 Mar 2013


    • Aluminum oxide
    • atomic layer deposition
    • ozone
    • Si surface passivation


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