Parametric study of laterally acoustically coupled bulk acoustic wave filters

Johanna Meltaus, Tuomas Pensala, K. Kokkonen

Research output: Contribution to journalArticleScientificpeer-review

16 Citations (Scopus)

Abstract

Acoustically coupled thin-film bulk acoustic wave resonator filters, in which the coupling takes place mechanically in the lateral direction between closely-spaced narrow resonators, are a promising approach to passband filtering at gigahertz frequencies. In this paper, filters with interdigital electrode structures are studied. Electrode number, electrode width, and coupling gap width are varied. The resonators are solidly mounted, having an acoustic mirror isolating the resonator from a Si substrate and providing the means to engineer the acoustic dispersion properties of the resonators. The center frequency of the filters is around 2 GHz. Electrical frequency responses of the filters are measured and the strength of the lateral acoustic coupling is calculated from the measurements. The effects of device parameters on the acoustic coupling and the obtainable filter bandwidth are analyzed in detail. A bandpass filter with 4.9% bandwidth, minimum insertion loss of 2 dB and sharp transition from passband to suppression band, is presented.
Original languageEnglish
Pages (from-to)2742-2751
Number of pages9
JournalIEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control
Volume59
Issue number12
DOIs
Publication statusPublished - 2012
MoE publication typeA1 Journal article-refereed

Fingerprint

Wave filters
Resonators
resonators
Acoustic waves
filters
acoustics
acoustic coupling
Acoustics
Electrodes
electrodes
Acoustic dispersion
bandwidth
Bandwidth
Insertion losses
Bandpass filters
bandpass filters
insertion loss
frequency response
engineers
Frequency response

Cite this

@article{40205dd7a2fb42fa8a5b70a45ba62d81,
title = "Parametric study of laterally acoustically coupled bulk acoustic wave filters",
abstract = "Acoustically coupled thin-film bulk acoustic wave resonator filters, in which the coupling takes place mechanically in the lateral direction between closely-spaced narrow resonators, are a promising approach to passband filtering at gigahertz frequencies. In this paper, filters with interdigital electrode structures are studied. Electrode number, electrode width, and coupling gap width are varied. The resonators are solidly mounted, having an acoustic mirror isolating the resonator from a Si substrate and providing the means to engineer the acoustic dispersion properties of the resonators. The center frequency of the filters is around 2 GHz. Electrical frequency responses of the filters are measured and the strength of the lateral acoustic coupling is calculated from the measurements. The effects of device parameters on the acoustic coupling and the obtainable filter bandwidth are analyzed in detail. A bandpass filter with 4.9{\%} bandwidth, minimum insertion loss of 2 dB and sharp transition from passband to suppression band, is presented.",
author = "Johanna Meltaus and Tuomas Pensala and K. Kokkonen",
year = "2012",
doi = "10.1109/TUFFC.2012.2515",
language = "English",
volume = "59",
pages = "2742--2751",
journal = "IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control",
issn = "0885-3010",
publisher = "Institute of Electrical and Electronic Engineers IEEE",
number = "12",

}

Parametric study of laterally acoustically coupled bulk acoustic wave filters. / Meltaus, Johanna; Pensala, Tuomas; Kokkonen, K.

In: IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, Vol. 59, No. 12, 2012, p. 2742-2751.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Parametric study of laterally acoustically coupled bulk acoustic wave filters

AU - Meltaus, Johanna

AU - Pensala, Tuomas

AU - Kokkonen, K.

PY - 2012

Y1 - 2012

N2 - Acoustically coupled thin-film bulk acoustic wave resonator filters, in which the coupling takes place mechanically in the lateral direction between closely-spaced narrow resonators, are a promising approach to passband filtering at gigahertz frequencies. In this paper, filters with interdigital electrode structures are studied. Electrode number, electrode width, and coupling gap width are varied. The resonators are solidly mounted, having an acoustic mirror isolating the resonator from a Si substrate and providing the means to engineer the acoustic dispersion properties of the resonators. The center frequency of the filters is around 2 GHz. Electrical frequency responses of the filters are measured and the strength of the lateral acoustic coupling is calculated from the measurements. The effects of device parameters on the acoustic coupling and the obtainable filter bandwidth are analyzed in detail. A bandpass filter with 4.9% bandwidth, minimum insertion loss of 2 dB and sharp transition from passband to suppression band, is presented.

AB - Acoustically coupled thin-film bulk acoustic wave resonator filters, in which the coupling takes place mechanically in the lateral direction between closely-spaced narrow resonators, are a promising approach to passband filtering at gigahertz frequencies. In this paper, filters with interdigital electrode structures are studied. Electrode number, electrode width, and coupling gap width are varied. The resonators are solidly mounted, having an acoustic mirror isolating the resonator from a Si substrate and providing the means to engineer the acoustic dispersion properties of the resonators. The center frequency of the filters is around 2 GHz. Electrical frequency responses of the filters are measured and the strength of the lateral acoustic coupling is calculated from the measurements. The effects of device parameters on the acoustic coupling and the obtainable filter bandwidth are analyzed in detail. A bandpass filter with 4.9% bandwidth, minimum insertion loss of 2 dB and sharp transition from passband to suppression band, is presented.

U2 - 10.1109/TUFFC.2012.2515

DO - 10.1109/TUFFC.2012.2515

M3 - Article

VL - 59

SP - 2742

EP - 2751

JO - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

JF - IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control

SN - 0885-3010

IS - 12

ER -