Particle Detectors made of High Resistivity Czochralski Grown Silicon

J. Härkönen; E. Tuovinen; P. Luukka; Eija Maarit Tuominen; K. Lassila-Perini; J. Nysten; Z. Li; V. Eremin; A. Ivanov; E. Verbitskaya; P. Heikkilä; V. Ovchinnikov; M. Yli-Koski; P. Laitinen; I. Riihimäki; A. Virtanen

doi:10.1088/0031-8949/2004/T114/021

Particle Detectors made of High Resistivity Czochralski Grown Silicon

J. Härkönen (Corresponding Author), E. Tuovinen, P. Luukka, Eija Maarit Tuominen, K. Lassila-Perini, J. Nysten, Z. Li, V. Eremin, A. Ivanov, E. Verbitskaya, P. Heikkilä, V. Ovchinnikov, M. Yli-Koski, P. Laitinen, I. Riihimäki, A. Virtanen

Not published at VTT

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

Abstract

We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by νPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material. © Physica Scripta 2004.

Original language	English
Pages (from-to)	88-90
Journal	Physica Scripta
Volume	T114
DOIs	https://doi.org/10.1088/0031-8949/2004/T114/021
Publication status	Published - 2004
MoE publication type	A1 Journal article-refereed

Access to Document

10.1088/0031-8949/2004/T114/021

Cite this

Härkönen, J., Tuovinen, E., Luukka, P., Tuominen, E. M., Lassila-Perini, K., Nysten, J., Li, Z., Eremin, V., Ivanov, A., Verbitskaya, E., Heikkilä, P., Ovchinnikov, V., Yli-Koski, M., Laitinen, P., Riihimäki, I., & Virtanen, A. (2004). Particle Detectors made of High Resistivity Czochralski Grown Silicon. Physica Scripta, T114, 88-90. https://doi.org/10.1088/0031-8949/2004/T114/021

@article{4c02aeec4f8e4dff80767830c50ddcd7,

title = "Particle Detectors made of High Resistivity Czochralski Grown Silicon",

abstract = "We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by νPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material. {\textcopyright} Physica Scripta 2004.",

author = "J. H{\"a}rk{\"o}nen and E. Tuovinen and P. Luukka and Tuominen, {Eija Maarit} and K. Lassila-Perini and J. Nysten and Z. Li and V. Eremin and A. Ivanov and E. Verbitskaya and P. Heikkil{\"a} and V. Ovchinnikov and M. Yli-Koski and P. Laitinen and I. Riihim{\"a}ki and A. Virtanen",

year = "2004",

doi = "10.1088/0031-8949/2004/T114/021",

language = "English",

volume = "T114",

pages = "88--90",

journal = "Physica Scripta",

issn = "0031-8949",

publisher = "Institute of Physics IOP",

}

Härkönen, J, Tuovinen, E, Luukka, P, Tuominen, EM, Lassila-Perini, K, Nysten, J, Li, Z, Eremin, V, Ivanov, A, Verbitskaya, E, Heikkilä, P, Ovchinnikov, V, Yli-Koski, M, Laitinen, P, Riihimäki, I & Virtanen, A 2004, 'Particle Detectors made of High Resistivity Czochralski Grown Silicon', Physica Scripta, vol. T114, pp. 88-90. https://doi.org/10.1088/0031-8949/2004/T114/021

TY - JOUR

T1 - Particle Detectors made of High Resistivity Czochralski Grown Silicon

AU - Härkönen, J.

AU - Tuovinen, E.

AU - Luukka, P.

AU - Tuominen, Eija Maarit

AU - Lassila-Perini, K.

AU - Nysten, J.

AU - Li, Z.

AU - Eremin, V.

AU - Ivanov, A.

AU - Verbitskaya, E.

AU - Heikkilä, P.

AU - Ovchinnikov, V.

AU - Yli-Koski, M.

AU - Laitinen, P.

AU - Riihimäki, I.

AU - Virtanen, A.

PY - 2004

Y1 - 2004

N2 - We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by νPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material. © Physica Scripta 2004.

AB - We describe the fabrication process of fullsize silicon microstrip detectors processed on silicon wafers grown by magnetic Czochralski method. Defect analysis by DLTS spectroscopy as well as minority carrier lifetime measurements by νPCD method are presented. The electrical and detection properties of the Czochralski silicon detectors are comparable to those of leading commercial detector manufacturers. The radiation hardness of the Czochralski silicon detectors was proved to be superior to the devices made of traditional Float Zone silicon material. © Physica Scripta 2004.

U2 - 10.1088/0031-8949/2004/T114/021

DO - 10.1088/0031-8949/2004/T114/021

M3 - Article

SN - 0031-8949

VL - T114

SP - 88

EP - 90

JO - Physica Scripta

JF - Physica Scripta

ER -

Particle Detectors made of High Resistivity Czochralski Grown Silicon

Abstract

Access to Document

Fingerprint

Cite this