Pattern shape effects and artefacts in deep silicon etching

Jyrki Kiihamäki, Sami Franssila

Research output: Contribution to journalArticleScientificpeer-review

79 Citations (Scopus)

Abstract

Deep silicon etching in an inductively coupled plasma (ICP) reactor offers a high etch rate (7 μm/min), nearly vertical profile with simple oxide masking. Test structures with patterns of different sizes (from a few microns to over 100 μm) and shapes (square and circular holes and trenches of variable width/length) have been etched to depths up to 500 μm. Long narrow features are etched faster than wide short features, indicating the three-dimensional nature of the reactive ion etching lag. Experiments have been done for many different etch times in order to understand aspect ratio dependence of deep etching. Simple flow conductance model explains most of the observed aspect ratio and feature size dependence.
Original languageEnglish
Pages (from-to)2280-2285
Number of pages6
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume17
Issue number4
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

Fingerprint

Silicon
artifacts
Aspect ratio
Etching
etching
aspect ratio
Reactive ion etching
Inductively coupled plasma
silicon
Oxides
masking
time lag
reactors
oxides
Experiments
profiles
ions

Cite this

@article{89cf05a3db584927a3aad2b21bec5238,
title = "Pattern shape effects and artefacts in deep silicon etching",
abstract = "Deep silicon etching in an inductively coupled plasma (ICP) reactor offers a high etch rate (7 μm/min), nearly vertical profile with simple oxide masking. Test structures with patterns of different sizes (from a few microns to over 100 μm) and shapes (square and circular holes and trenches of variable width/length) have been etched to depths up to 500 μm. Long narrow features are etched faster than wide short features, indicating the three-dimensional nature of the reactive ion etching lag. Experiments have been done for many different etch times in order to understand aspect ratio dependence of deep etching. Simple flow conductance model explains most of the observed aspect ratio and feature size dependence.",
author = "Jyrki Kiiham{\"a}ki and Sami Franssila",
year = "1999",
doi = "10.1116/1.581761",
language = "English",
volume = "17",
pages = "2280--2285",
journal = "Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films",
issn = "0734-2101",
publisher = "American Vacuum Society AVS",
number = "4",

}

Pattern shape effects and artefacts in deep silicon etching. / Kiihamäki, Jyrki; Franssila, Sami.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, No. 4, 1999, p. 2280-2285.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Pattern shape effects and artefacts in deep silicon etching

AU - Kiihamäki, Jyrki

AU - Franssila, Sami

PY - 1999

Y1 - 1999

N2 - Deep silicon etching in an inductively coupled plasma (ICP) reactor offers a high etch rate (7 μm/min), nearly vertical profile with simple oxide masking. Test structures with patterns of different sizes (from a few microns to over 100 μm) and shapes (square and circular holes and trenches of variable width/length) have been etched to depths up to 500 μm. Long narrow features are etched faster than wide short features, indicating the three-dimensional nature of the reactive ion etching lag. Experiments have been done for many different etch times in order to understand aspect ratio dependence of deep etching. Simple flow conductance model explains most of the observed aspect ratio and feature size dependence.

AB - Deep silicon etching in an inductively coupled plasma (ICP) reactor offers a high etch rate (7 μm/min), nearly vertical profile with simple oxide masking. Test structures with patterns of different sizes (from a few microns to over 100 μm) and shapes (square and circular holes and trenches of variable width/length) have been etched to depths up to 500 μm. Long narrow features are etched faster than wide short features, indicating the three-dimensional nature of the reactive ion etching lag. Experiments have been done for many different etch times in order to understand aspect ratio dependence of deep etching. Simple flow conductance model explains most of the observed aspect ratio and feature size dependence.

U2 - 10.1116/1.581761

DO - 10.1116/1.581761

M3 - Article

VL - 17

SP - 2280

EP - 2285

JO - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

JF - Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

SN - 0734-2101

IS - 4

ER -