Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Heorhii Bohuslavskyi; D. Kotekar-Patil; R. Maurand; Andrea Corna; S. Barraud; L. Bourdet; L. Hutin; Y.-M. Niquet; X. Jehl; S. De Franceschi; M. Vinet; M. Sanquer

doi:10.1063/1.4966946

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Heorhii Bohuslavskyi
, D. Kotekar-Patil
, R. Maurand
, Andrea Corna
, S. Barraud
, L. Bourdet
, L. Hutin
, Y.-M. Niquet
, X. Jehl
, S. De Franceschi
, M. Vinet
, M. Sanquer

Not published at VTT

Grenoble Alpes University
Laboratoire d'électronique des technologies de l'information (LETI)
Institute for Nanoscience and Cryogenics (INAC)

Research output: Contribution to journal › Article › Scientific › peer-review

Abstract

We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few hole regime that is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate ≈120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

Original language	English
Journal	Applied Physics Letters
Volume	109
Issue number	19
DOIs	https://doi.org/10.1063/1.4966946
Publication status	Published - 7 Nov 2016
MoE publication type	A1 Journal article-refereed

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10.1063/1.4966946

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title = "Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction",

abstract = "We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few hole regime that is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate ≈120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit.",

author = "Heorhii Bohuslavskyi and D. Kotekar-Patil and R. Maurand and Andrea Corna and S. Barraud and L. Bourdet and L. Hutin and Y.-M. Niquet and X. Jehl and Franceschi, \{S. De\} and M. Vinet and M. Sanquer",

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doi = "10.1063/1.4966946",

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T1 - Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

AU - Bohuslavskyi, Heorhii

AU - Kotekar-Patil, D.

AU - Maurand, R.

AU - Corna, Andrea

AU - Barraud, S.

AU - Bourdet, L.

AU - Hutin, L.

AU - Niquet, Y.-M.

AU - Jehl, X.

AU - Franceschi, S. De

AU - Vinet, M.

AU - Sanquer, M.

PY - 2016/11/7

Y1 - 2016/11/7

N2 - We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few hole regime that is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate ≈120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

AB - We report on the hole compact double quantum dots fabricated using a conventional CMOS technology. We provide the evidence of Pauli spin blockade in the few hole regime that is relevant to spin qubit implementations. A current dip is observed around zero magnetic field, in agreement with the expected behavior for the case of strong spin-orbit. We deduce an intradot spin relaxation rate ≈120 kHz for the first holes, an important step towards a robust hole spin-orbit qubit.

U2 - 10.1063/1.4966946

DO - 10.1063/1.4966946

M3 - Article

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Pauli blockade in a few-hole PMOS double quantum dot limited by spin-orbit interaction

Abstract

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