Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, J. Manus, H. Feldmann, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

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    Abstract

    The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.
    Original languageEnglish
    Pages (from-to)3200-3202
    Number of pages3
    JournalApplied Physics Letters
    Volume74
    Issue number21
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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  • Cite this

    Obermuller, C., Deisenrieder, A., Abstreiter, G., Karrai, K., Grosse, S., Manus, J., Feldmann, H., Lipsanen, H., Sopanen, M., & Ahopelto, J. (1999). Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Applied Physics Letters, 74(21), 3200-3202. https://doi.org/10.1063/1.124116