Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, J. Manus, H. Feldmann, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

Research output: Contribution to journalArticleScientificpeer-review

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Abstract

The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.
Original languageEnglish
Pages (from-to)3200-3202
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number21
DOIs
Publication statusPublished - 1999
MoE publication typeA1 Journal article-refereed

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quantum dots
photoluminescence
spatial resolution
near fields
energy levels
quantum wells
microscopy
scanning
excitation

Cite this

Obermuller, C., Deisenrieder, A., Abstreiter, G., Karrai, K., Grosse, S., Manus, J., ... Ahopelto, J. (1999). Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Applied Physics Letters, 74(21), 3200-3202. https://doi.org/10.1063/1.124116
Obermuller, C. ; Deisenrieder, A. ; Abstreiter, G. ; Karrai, K. ; Grosse, S. ; Manus, J. ; Feldmann, H. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Pauli-blocking imaging of single strain-induced semiconductor quantum dots. In: Applied Physics Letters. 1999 ; Vol. 74, No. 21. pp. 3200-3202.
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title = "Pauli-blocking imaging of single strain-induced semiconductor quantum dots",
abstract = "The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.",
author = "C. Obermuller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and J. Manus and H. Feldmann and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
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Obermuller, C, Deisenrieder, A, Abstreiter, G, Karrai, K, Grosse, S, Manus, J, Feldmann, H, Lipsanen, H, Sopanen, M & Ahopelto, J 1999, 'Pauli-blocking imaging of single strain-induced semiconductor quantum dots', Applied Physics Letters, vol. 74, no. 21, pp. 3200-3202. https://doi.org/10.1063/1.124116

Pauli-blocking imaging of single strain-induced semiconductor quantum dots. / Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, J.; Feldmann, H.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

In: Applied Physics Letters, Vol. 74, No. 21, 1999, p. 3200-3202.

Research output: Contribution to journalArticleScientificpeer-review

TY - JOUR

T1 - Pauli-blocking imaging of single strain-induced semiconductor quantum dots

AU - Obermuller, C.

AU - Deisenrieder, A.

AU - Abstreiter, G.

AU - Karrai, K.

AU - Grosse, S.

AU - Manus, J.

AU - Feldmann, H.

AU - Lipsanen, Harri

AU - Sopanen, Markku

AU - Ahopelto, Jouni

PY - 1999

Y1 - 1999

N2 - The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

AB - The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

U2 - 10.1063/1.124116

DO - 10.1063/1.124116

M3 - Article

VL - 74

SP - 3200

EP - 3202

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 21

ER -

Obermuller C, Deisenrieder A, Abstreiter G, Karrai K, Grosse S, Manus J et al. Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Applied Physics Letters. 1999;74(21):3200-3202. https://doi.org/10.1063/1.124116