The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.