Pauli-blocking imaging of single strain-induced semiconductor quantum dots

C. Obermuller, A. Deisenrieder, G. Abstreiter, K. Karrai, S. Grosse, J. Manus, H. Feldmann, Harri Lipsanen, Markku Sopanen, Jouni Ahopelto

    Research output: Contribution to journalArticleScientificpeer-review

    30 Citations (Scopus)

    Abstract

    The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.
    Original languageEnglish
    Pages (from-to)3200-3202
    Number of pages3
    JournalApplied Physics Letters
    Volume74
    Issue number21
    DOIs
    Publication statusPublished - 1999
    MoE publication typeA1 Journal article-refereed

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    quantum dots
    photoluminescence
    spatial resolution
    near fields
    energy levels
    quantum wells
    microscopy
    scanning
    excitation

    Cite this

    Obermuller, C., Deisenrieder, A., Abstreiter, G., Karrai, K., Grosse, S., Manus, J., ... Ahopelto, J. (1999). Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Applied Physics Letters, 74(21), 3200-3202. https://doi.org/10.1063/1.124116
    Obermuller, C. ; Deisenrieder, A. ; Abstreiter, G. ; Karrai, K. ; Grosse, S. ; Manus, J. ; Feldmann, H. ; Lipsanen, Harri ; Sopanen, Markku ; Ahopelto, Jouni. / Pauli-blocking imaging of single strain-induced semiconductor quantum dots. In: Applied Physics Letters. 1999 ; Vol. 74, No. 21. pp. 3200-3202.
    @article{683914f92683477bb0dcc853a18ed338,
    title = "Pauli-blocking imaging of single strain-induced semiconductor quantum dots",
    abstract = "The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.",
    author = "C. Obermuller and A. Deisenrieder and G. Abstreiter and K. Karrai and S. Grosse and J. Manus and H. Feldmann and Harri Lipsanen and Markku Sopanen and Jouni Ahopelto",
    year = "1999",
    doi = "10.1063/1.124116",
    language = "English",
    volume = "74",
    pages = "3200--3202",
    journal = "Applied Physics Letters",
    issn = "0003-6951",
    number = "21",

    }

    Obermuller, C, Deisenrieder, A, Abstreiter, G, Karrai, K, Grosse, S, Manus, J, Feldmann, H, Lipsanen, H, Sopanen, M & Ahopelto, J 1999, 'Pauli-blocking imaging of single strain-induced semiconductor quantum dots', Applied Physics Letters, vol. 74, no. 21, pp. 3200-3202. https://doi.org/10.1063/1.124116

    Pauli-blocking imaging of single strain-induced semiconductor quantum dots. / Obermuller, C.; Deisenrieder, A.; Abstreiter, G.; Karrai, K.; Grosse, S.; Manus, J.; Feldmann, H.; Lipsanen, Harri; Sopanen, Markku; Ahopelto, Jouni.

    In: Applied Physics Letters, Vol. 74, No. 21, 1999, p. 3200-3202.

    Research output: Contribution to journalArticleScientificpeer-review

    TY - JOUR

    T1 - Pauli-blocking imaging of single strain-induced semiconductor quantum dots

    AU - Obermuller, C.

    AU - Deisenrieder, A.

    AU - Abstreiter, G.

    AU - Karrai, K.

    AU - Grosse, S.

    AU - Manus, J.

    AU - Feldmann, H.

    AU - Lipsanen, Harri

    AU - Sopanen, Markku

    AU - Ahopelto, Jouni

    PY - 1999

    Y1 - 1999

    N2 - The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

    AB - The photoluminescence (PL) of InP strained-induced quantum dots in a GaInAs/GaAs quantum well is measured at low temperature (4.2 K) using near-field scanning optical microscopy. The PL originating from the first three confined levels of eight individual dots is mapped out over an area of 1.4×1.4 μm. The spatial resolution of the PL of the lowest energy level is found to be limited to about 0.5 μm. In contrast, the mapping of the PL of the higher excited state shows a much improved spatial resolution of the order of 150 nm which is the instrument resolution. This effect is understood in terms of Pauli-blocking of the dot level filling.

    U2 - 10.1063/1.124116

    DO - 10.1063/1.124116

    M3 - Article

    VL - 74

    SP - 3200

    EP - 3202

    JO - Applied Physics Letters

    JF - Applied Physics Letters

    SN - 0003-6951

    IS - 21

    ER -

    Obermuller C, Deisenrieder A, Abstreiter G, Karrai K, Grosse S, Manus J et al. Pauli-blocking imaging of single strain-induced semiconductor quantum dots. Applied Physics Letters. 1999;74(21):3200-3202. https://doi.org/10.1063/1.124116