Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection: Part 2. Experimental verification

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    Abstract

    This paper gives experimental demonstration that the method described in Part 1 of the paper, using data from Human Body Model test on devices, can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. The predicted ESD current damage threshold is demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (10 refs.)
    Original languageEnglish
    Article number012006
    Number of pages6
    JournalJournal of Physics: Conference Series
    Volume142
    Issue number1
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA4 Article in a conference publication
    EventElectrostatics 2007 - Oxford, United Kingdom
    Duration: 25 Mar 200729 Mar 2007

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