Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection: Part 2. Experimental verification

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    Abstract

    This paper gives experimental demonstration that the method described in Part 1 of the paper, using data from Human Body Model test on devices, can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. The predicted ESD current damage threshold is demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (10 refs.)
    Original languageEnglish
    Article number012006
    Number of pages6
    JournalJournal of Physics: Conference Series
    Volume142
    Issue number1
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA4 Article in a conference publication
    EventElectrostatics 2007 - Oxford, United Kingdom
    Duration: 25 Mar 200729 Mar 2007

    Fingerprint

    semiconductor devices
    evaluation
    human body
    yield point
    industrial plants
    threshold currents
    assembly
    damage
    estimates
    pulses
    electronics
    energy

    Cite this

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    title = "Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection: Part 2. Experimental verification",
    abstract = "This paper gives experimental demonstration that the method described in Part 1 of the paper, using data from Human Body Model test on devices, can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. The predicted ESD current damage threshold is demonstrated to give a useful boundary to a {"}safe{"} area of ESD current and duration. (10 refs.)",
    author = "Jaakko Paasi and Hannu Salmela and J. Smallwood",
    year = "2008",
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    language = "English",
    volume = "142",
    journal = "Journal of Physics: Conference Series",
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    Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection : Part 2. Experimental verification. / Paasi, Jaakko; Salmela, Hannu; Smallwood, J.

    In: Journal of Physics: Conference Series, Vol. 142, No. 1, 012006, 2008.

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    TY - JOUR

    T1 - Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection

    T2 - Part 2. Experimental verification

    AU - Paasi, Jaakko

    AU - Salmela, Hannu

    AU - Smallwood, J.

    PY - 2008

    Y1 - 2008

    N2 - This paper gives experimental demonstration that the method described in Part 1 of the paper, using data from Human Body Model test on devices, can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. The predicted ESD current damage threshold is demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (10 refs.)

    AB - This paper gives experimental demonstration that the method described in Part 1 of the paper, using data from Human Body Model test on devices, can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. The predicted ESD current damage threshold is demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (10 refs.)

    U2 - 10.1088/1742-6596/142/1/012006

    DO - 10.1088/1742-6596/142/1/012006

    M3 - Article in a proceedings journal

    VL - 142

    JO - Journal of Physics: Conference Series

    JF - Journal of Physics: Conference Series

    SN - 1742-6588

    IS - 1

    M1 - 012006

    ER -