Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection: Part 1. Theoretical analysis

    Research output: Contribution to journalArticle in a proceedings journal

    1 Citation (Scopus)

    Abstract

    This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge (ESD) energy susceptible devices combined with data from Human Body Model test on devices can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices over a wide range of ESD duration and waveforms. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. In Part 2 of this paper the predicted ESD current damage threshold is experimentally demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (8 refs.)
    Original languageEnglish
    Article number012056
    Number of pages4
    JournalJournal of Physics: Conference Series
    Volume142
    Issue number1
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA4 Article in a conference publication
    EventElectrostatics 2007 - Oxford, United Kingdom
    Duration: 25 Mar 200729 Mar 2007

      Fingerprint

    Cite this