Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection: Part 1. Theoretical analysis

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    1 Citation (Scopus)

    Abstract

    This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge (ESD) energy susceptible devices combined with data from Human Body Model test on devices can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices over a wide range of ESD duration and waveforms. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. In Part 2 of this paper the predicted ESD current damage threshold is experimentally demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (8 refs.)
    Original languageEnglish
    Article number012056
    Number of pages4
    JournalJournal of Physics: Conference Series
    Volume142
    Issue number1
    DOIs
    Publication statusPublished - 2008
    MoE publication typeA4 Article in a conference publication
    EventElectrostatics 2007 - Oxford, United Kingdom
    Duration: 25 Mar 200729 Mar 2007

    Fingerprint

    semiconductor devices
    electrostatics
    evaluation
    damage
    human body
    yield point
    industrial plants
    threshold currents
    waveforms
    assembly
    energy
    estimates
    pulses
    electronics

    Cite this

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    title = "Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection: Part 1. Theoretical analysis",
    abstract = "This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge (ESD) energy susceptible devices combined with data from Human Body Model test on devices can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices over a wide range of ESD duration and waveforms. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. In Part 2 of this paper the predicted ESD current damage threshold is experimentally demonstrated to give a useful boundary to a {"}safe{"} area of ESD current and duration. (8 refs.)",
    author = "J. Smallwood and Hannu Salmela and Jaakko Paasi",
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    language = "English",
    volume = "142",
    journal = "Journal of Physics: Conference Series",
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    Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection : Part 1. Theoretical analysis. / Smallwood, J.; Salmela, Hannu; Paasi, Jaakko.

    In: Journal of Physics: Conference Series, Vol. 142, No. 1, 012056, 2008.

    Research output: Contribution to journalArticle in a proceedings journalScientificpeer-review

    TY - JOUR

    T1 - Peak current failure levels in ESD sensitive semiconductor devices and their application in evaluation of materials used in ESD protection

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    AU - Smallwood, J.

    AU - Salmela, Hannu

    AU - Paasi, Jaakko

    PY - 2008

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    N2 - This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge (ESD) energy susceptible devices combined with data from Human Body Model test on devices can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices over a wide range of ESD duration and waveforms. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. In Part 2 of this paper the predicted ESD current damage threshold is experimentally demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (8 refs.)

    AB - This paper shows that theoretical analysis of the thermal model of damage to electrostatic discharge (ESD) energy susceptible devices combined with data from Human Body Model test on devices can be used to estimate an ESD pulse current threshold for damage to ESD energy susceptible semiconductor devices over a wide range of ESD duration and waveforms. The technique is intended for laboratory evaluation of ESD threats from equipment, materials and other ESD sources in the electronics assembly factory environment. In Part 2 of this paper the predicted ESD current damage threshold is experimentally demonstrated to give a useful boundary to a "safe" area of ESD current and duration. (8 refs.)

    U2 - 10.1088/1742-6596/142/1/012056

    DO - 10.1088/1742-6596/142/1/012056

    M3 - Article in a proceedings journal

    VL - 142

    JO - Journal of Physics: Conference Series

    JF - Journal of Physics: Conference Series

    SN - 1742-6588

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