Keyphrases
Performance Analysis
100%
III-V
100%
Performance Modeling
100%
Field Plate
100%
NWFET
100%
Vertical Nanowire
100%
Transconductance
57%
Breakdown Voltage
42%
Plate Length
28%
Drain Regions
28%
Device Performance
14%
Performance Parameters
14%
SiO2 Layer
14%
Operating Voltage
14%
Vertically Integrated
14%
Scale Effect
14%
On-resistance
14%
Band-to-band Tunneling
14%
Drain Resistance
14%
Device Behavior
14%
Virtual Source Model
14%
Heterostructure Engineering
14%
Nanowire Devices
14%
Composition Grading
14%
Field Engineering
14%
Gate Contact
14%
Electric Field (E-field)
14%
Engineering
Performance Analysis
100%
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Engineering
100%
Breakdown Voltage
100%
Nanowire
100%
Drain Region
66%
Performance Parameter
33%
Device Performance
33%
Source Model
33%
Device Behavior
33%
Operating Voltage
33%
Channel Region
33%
Sio2 Layer
33%
Heterojunctions
33%
Tunnel Construction
33%
Electric Field
33%
Transmission Device
33%
Nanowire Device
33%
INIS
performance
100%
voltage
100%
modeling
100%
plates
100%
nanowires
100%
mosfet
100%
devices
71%
engineering
42%
breakdown
42%
length
28%
scaling
28%
layers
14%
tunneling
14%
transmission
14%
capture
14%
electric fields
14%
tuning
14%
Material Science
Metal-Oxide-Semiconductor Field-Effect Transistor
100%
Nanowires
100%
Heterojunction
25%